IRFPC40PBF

Vishay Siliconix IRFPC40PBF

Part Number:
IRFPC40PBF
Manufacturer:
Vishay Siliconix
Ventron No:
2849511-IRFPC40PBF
Description:
MOSFET N-CH 600V 6.8A TO-247AC
ECAD Model:
Datasheet:
IRFPC40PBF

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Specifications
Vishay Siliconix IRFPC40PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFPC40PBF.
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-247-3
  • Weight
    38.000013g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2016
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    1.2Ohm
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    150W Tc
  • Element Configuration
    Single
  • Power Dissipation
    150W
  • Turn On Delay Time
    13 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    1.2Ohm @ 4.1A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1300pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    6.8A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    60nC @ 10V
  • Rise Time
    18ns
  • Drain to Source Voltage (Vdss)
    600V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    20 ns
  • Turn-Off Delay Time
    55 ns
  • Continuous Drain Current (ID)
    6.8A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    600V
  • Input Capacitance
    1.3nF
  • Recovery Time
    940 ns
  • Drain to Source Resistance
    1.2Ohm
  • Rds On Max
    1.2 Ω
  • Nominal Vgs
    4 V
  • Height
    20.7mm
  • Length
    15.87mm
  • Width
    5.31mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFPC40PBF Overview
A device's maximal input capacitance is 1300pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 6.8A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 55 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 1.2Ohm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 13 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IRFPC40PBF Features
a continuous drain current (ID) of 6.8A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 55 ns
single MOSFETs transistor is 1.2Ohm
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)


IRFPC40PBF Applications
There are a lot of Vishay Siliconix
IRFPC40PBF applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IRFPC40PBF More Descriptions
Single N-Channel 600 V 1.2 Ohms Flange Mount Power Mosfet - TO-247AC
Trans MOSFET N-CH 600V 6.8A 3-Pin(3 Tab) TO-247AC
MOSFET, Single - N-Channel, 600V, 4.3A, TO-247
N Channel Mosfet, 600V, 6.8A To-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:6.8A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: No |Vishay IRFPC40PBF.
Product Comparison
The three parts on the right have similar specifications to IRFPC40PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Recovery Time
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    Terminal Finish
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Voltage - Rated DC
    Current Rating
    View Compare
  • IRFPC40PBF
    IRFPC40PBF
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    2016
    Active
    1 (Unlimited)
    1.2Ohm
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    1
    150W Tc
    Single
    150W
    13 ns
    N-Channel
    1.2Ohm @ 4.1A, 10V
    4V @ 250μA
    1300pF @ 25V
    6.8A Tc
    60nC @ 10V
    18ns
    600V
    10V
    ±20V
    20 ns
    55 ns
    6.8A
    4V
    20V
    600V
    1.3nF
    940 ns
    1.2Ohm
    1.2 Ω
    4 V
    20.7mm
    15.87mm
    5.31mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFP150
    -
    -
    Through Hole
    TO-247-3
    -
    -
    -
    -55°C~175°C TJ
    Tube
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    1
    -
    230W Tc
    -
    -
    -
    N-Channel
    55m Ω @ 25A, 10V
    4V @ 250μA
    2.8pF @ 25V
    41A Tc
    140nC @ 10V
    -
    100V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    NO
    SILICON
    e0
    no
    3
    TIN LEAD
    SINGLE
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    R-PSFM-T3
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    40A
    0.055Ohm
    160A
    100V
    -
    -
  • IRFP450B
    -
    -
    Through Hole
    TO-3P-3, SC-65-3
    -
    TO-3P
    -
    -55°C~150°C TJ
    Tube
    2001
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    205W Tc
    -
    -
    -
    N-Channel
    390mOhm @ 7A, 10V
    4V @ 250μA
    3800pF @ 25V
    14A Tc
    113nC @ 10V
    -
    500V
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFP350
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    2015
    Obsolete
    1 (Unlimited)
    -
    150°C
    -55°C
    MOSFET (Metal Oxide)
    -
    1
    190W Tc
    Single
    190W
    16 ns
    N-Channel
    300mOhm @ 9.6A, 10V
    4V @ 250μA
    2600pF @ 25V
    16A Tc
    150nC @ 10V
    49ns
    400V
    10V
    ±20V
    47 ns
    87 ns
    16A
    -
    20V
    400V
    2.6nF
    -
    300mOhm
    300 mΩ
    -
    20.7mm
    15.87mm
    5.31mm
    -
    -
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    400V
    16A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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