Vishay Siliconix IRFP9240PBF
- Part Number:
- IRFP9240PBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2482897-IRFP9240PBF
- Description:
- MOSFET P-CH 200V 12A TO-247AC
- Datasheet:
- IRFP9240PBF
Vishay Siliconix IRFP9240PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFP9240PBF.
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Supplier Device PackageTO-247-3
- Weight38.000013g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published1997
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TerminationThrough Hole
- Resistance500mOhm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC-200V
- TechnologyMOSFET (Metal Oxide)
- Current Rating-12A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max150W Tc
- Element ConfigurationSingle
- Power Dissipation150W
- Turn On Delay Time14 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs500mOhm @ 7.2A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1200pF @ 25V
- Current - Continuous Drain (Id) @ 25°C12A Tc
- Gate Charge (Qg) (Max) @ Vgs44nC @ 10V
- Rise Time43ns
- Drain to Source Voltage (Vdss)200V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)38 ns
- Turn-Off Delay Time39 ns
- Continuous Drain Current (ID)-12A
- Threshold Voltage-4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-200V
- Dual Supply Voltage-200V
- Input Capacitance1.2nF
- Recovery Time300 ns
- Max Junction Temperature (Tj)150°C
- Drain to Source Resistance500mOhm
- Rds On Max500 mΩ
- Nominal Vgs-4 V
- Height25.11mm
- Length15.87mm
- Width5.31mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFP9240PBF Overview
A device's maximal input capacitance is 1200pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is -12A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 39 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 500mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 14 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a -4V threshold voltage.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFP9240PBF Features
a continuous drain current (ID) of -12A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 39 ns
single MOSFETs transistor is 500mOhm
a threshold voltage of -4V
a 200V drain to source voltage (Vdss)
IRFP9240PBF Applications
There are a lot of Vishay Siliconix
IRFP9240PBF applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 1200pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is -12A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 39 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 500mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 14 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a -4V threshold voltage.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFP9240PBF Features
a continuous drain current (ID) of -12A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 39 ns
single MOSFETs transistor is 500mOhm
a threshold voltage of -4V
a 200V drain to source voltage (Vdss)
IRFP9240PBF Applications
There are a lot of Vishay Siliconix
IRFP9240PBF applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IRFP9240PBF More Descriptions
Single P-Channel 200 V 0.5 Ohms Flange Mount Power Mosfet - TO-247AC
TRANSISTOR, MOSFET, POLARITY P; Transistor Polarity: P Channel; Continuous Drain Current Id: -12A; Drain Source Voltage Vds: -200V; On Resistance Rds(on): 0.5ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 150W; Transistor Case Style: TO-247AC; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: -12A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Through Hole; Voltage Vds Typ: -200V; Voltage Vgs Max: -20V; Voltage Vgs Rds on Measurement: -10V
Power Field-Effect Transistor, 12A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
TRANSISTOR, MOSFET, POLARITY P; Transistor Polarity: P Channel; Continuous Drain Current Id: -12A; Drain Source Voltage Vds: -200V; On Resistance Rds(on): 0.5ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 150W; Transistor Case Style: TO-247AC; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: -12A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Through Hole; Voltage Vds Typ: -200V; Voltage Vgs Max: -20V; Voltage Vgs Rds on Measurement: -10V
Power Field-Effect Transistor, 12A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
The three parts on the right have similar specifications to IRFP9240PBF.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)TerminationResistanceMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageInput CapacitanceRecovery TimeMax Junction Temperature (Tj)Drain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinView Compare
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IRFP9240PBF8 WeeksTinThrough HoleThrough HoleTO-247-33TO-247-338.000013g-55°C~150°C TJTube1997Active1 (Unlimited)Through Hole500mOhm150°C-55°C-200VMOSFET (Metal Oxide)-12A11150W TcSingle150W14 nsP-Channel500mOhm @ 7.2A, 10V4V @ 250μA1200pF @ 25V12A Tc44nC @ 10V43ns200V10V±20V38 ns39 ns-12A-4V20V-200V-200V1.2nF300 ns150°C500mOhm500 mΩ-4 V25.11mm15.87mm5.31mmUnknownNoROHS3 CompliantLead Free---------------------
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---Through HoleTO-247-3----55°C~175°C TJTube-Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)-1-230W Tc---N-Channel55m Ω @ 25A, 10V4V @ 250μA2.8pF @ 25V41A Tc140nC @ 10V-100V10V±20V------------------Non-RoHS Compliant-NOSILICONe0no3TIN LEADSINGLENOT SPECIFIEDunknownNOT SPECIFIEDR-PSFM-T3COMMERCIALSINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING40A0.055Ohm160A100V
-
--Through HoleThrough HoleTO-247-33TO-247-338.000013g-55°C~150°C TJTube2016Obsolete1 (Unlimited)--150°C-55°C-MOSFET (Metal Oxide)-11190W TcSingle190W14 nsN-Channel300mOhm @ 9.6A, 10V4V @ 250μA2200pF @ 25V16A Tc76nC @ 10V54ns400V10V±30V35 ns33 ns16A4V30V400V-2.2nF--300mOhm300 mΩ4 V20.7mm15.87mm5.31mmUnknownNoNon-RoHS Compliant---------------------
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--Through HoleThrough HoleTO-247-3-TO-247-338.000013g-55°C~150°C TJTube2014Obsolete1 (Unlimited)--150°C-55°C500VMOSFET (Metal Oxide)32A-1460W TcSingle-28 nsN-Channel160mOhm @ 32A, 10V5V @ 250μA5280pF @ 25V32A Tc190nC @ 10V120ns500V10V±30V54 ns48 ns32A-30V500V-5.28nF--160mOhm160 mΩ-20.7mm15.87mm5.31mm-NoNon-RoHS CompliantContains Lead--------------------
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