IRFP9240PBF

Vishay Siliconix IRFP9240PBF

Part Number:
IRFP9240PBF
Manufacturer:
Vishay Siliconix
Ventron No:
2482897-IRFP9240PBF
Description:
MOSFET P-CH 200V 12A TO-247AC
ECAD Model:
Datasheet:
IRFP9240PBF

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Specifications
Vishay Siliconix IRFP9240PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFP9240PBF.
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-247-3
  • Weight
    38.000013g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    1997
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Termination
    Through Hole
  • Resistance
    500mOhm
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    -200V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    -12A
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    150W Tc
  • Element Configuration
    Single
  • Power Dissipation
    150W
  • Turn On Delay Time
    14 ns
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    500mOhm @ 7.2A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1200pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    12A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    44nC @ 10V
  • Rise Time
    43ns
  • Drain to Source Voltage (Vdss)
    200V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    38 ns
  • Turn-Off Delay Time
    39 ns
  • Continuous Drain Current (ID)
    -12A
  • Threshold Voltage
    -4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -200V
  • Dual Supply Voltage
    -200V
  • Input Capacitance
    1.2nF
  • Recovery Time
    300 ns
  • Max Junction Temperature (Tj)
    150°C
  • Drain to Source Resistance
    500mOhm
  • Rds On Max
    500 mΩ
  • Nominal Vgs
    -4 V
  • Height
    25.11mm
  • Length
    15.87mm
  • Width
    5.31mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFP9240PBF Overview
A device's maximal input capacitance is 1200pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is -12A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 39 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 500mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 14 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a -4V threshold voltage.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IRFP9240PBF Features
a continuous drain current (ID) of -12A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 39 ns
single MOSFETs transistor is 500mOhm
a threshold voltage of -4V
a 200V drain to source voltage (Vdss)


IRFP9240PBF Applications
There are a lot of Vishay Siliconix
IRFP9240PBF applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IRFP9240PBF More Descriptions
Single P-Channel 200 V 0.5 Ohms Flange Mount Power Mosfet - TO-247AC
TRANSISTOR, MOSFET, POLARITY P; Transistor Polarity: P Channel; Continuous Drain Current Id: -12A; Drain Source Voltage Vds: -200V; On Resistance Rds(on): 0.5ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 150W; Transistor Case Style: TO-247AC; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: -12A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Through Hole; Voltage Vds Typ: -200V; Voltage Vgs Max: -20V; Voltage Vgs Rds on Measurement: -10V
Power Field-Effect Transistor, 12A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Product Comparison
The three parts on the right have similar specifications to IRFP9240PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Termination
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Input Capacitance
    Recovery Time
    Max Junction Temperature (Tj)
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    Terminal Finish
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    View Compare
  • IRFP9240PBF
    IRFP9240PBF
    8 Weeks
    Tin
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    1997
    Active
    1 (Unlimited)
    Through Hole
    500mOhm
    150°C
    -55°C
    -200V
    MOSFET (Metal Oxide)
    -12A
    1
    1
    150W Tc
    Single
    150W
    14 ns
    P-Channel
    500mOhm @ 7.2A, 10V
    4V @ 250μA
    1200pF @ 25V
    12A Tc
    44nC @ 10V
    43ns
    200V
    10V
    ±20V
    38 ns
    39 ns
    -12A
    -4V
    20V
    -200V
    -200V
    1.2nF
    300 ns
    150°C
    500mOhm
    500 mΩ
    -4 V
    25.11mm
    15.87mm
    5.31mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFP150
    -
    -
    -
    Through Hole
    TO-247-3
    -
    -
    -
    -55°C~175°C TJ
    Tube
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    1
    -
    230W Tc
    -
    -
    -
    N-Channel
    55m Ω @ 25A, 10V
    4V @ 250μA
    2.8pF @ 25V
    41A Tc
    140nC @ 10V
    -
    100V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    NO
    SILICON
    e0
    no
    3
    TIN LEAD
    SINGLE
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    R-PSFM-T3
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    40A
    0.055Ohm
    160A
    100V
  • IRFP350LC
    -
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    -
    -
    150°C
    -55°C
    -
    MOSFET (Metal Oxide)
    -
    1
    1
    190W Tc
    Single
    190W
    14 ns
    N-Channel
    300mOhm @ 9.6A, 10V
    4V @ 250μA
    2200pF @ 25V
    16A Tc
    76nC @ 10V
    54ns
    400V
    10V
    ±30V
    35 ns
    33 ns
    16A
    4V
    30V
    400V
    -
    2.2nF
    -
    -
    300mOhm
    300 mΩ
    4 V
    20.7mm
    15.87mm
    5.31mm
    Unknown
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFP32N50K
    -
    -
    Through Hole
    Through Hole
    TO-247-3
    -
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    2014
    Obsolete
    1 (Unlimited)
    -
    -
    150°C
    -55°C
    500V
    MOSFET (Metal Oxide)
    32A
    -
    1
    460W Tc
    Single
    -
    28 ns
    N-Channel
    160mOhm @ 32A, 10V
    5V @ 250μA
    5280pF @ 25V
    32A Tc
    190nC @ 10V
    120ns
    500V
    10V
    ±30V
    54 ns
    48 ns
    32A
    -
    30V
    500V
    -
    5.28nF
    -
    -
    160mOhm
    160 mΩ
    -
    20.7mm
    15.87mm
    5.31mm
    -
    No
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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