IRFP9140

Vishay Siliconix IRFP9140

Part Number:
IRFP9140
Manufacturer:
Vishay Siliconix
Ventron No:
3813696-IRFP9140
Description:
MOSFET P-CH 100V 21A TO-247AC
ECAD Model:
Datasheet:
IRFP9140

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Specifications
Vishay Siliconix IRFP9140 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFP9140.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-247-3
  • Weight
    38.000013g
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2016
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    -100V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    -21A
  • Number of Channels
    1
  • Power Dissipation-Max
    180W Tc
  • Element Configuration
    Single
  • Turn On Delay Time
    16 ns
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    200mOhm @ 13A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1400pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    21A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    61nC @ 10V
  • Rise Time
    73ns
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    57 ns
  • Turn-Off Delay Time
    34 ns
  • Continuous Drain Current (ID)
    21A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -100V
  • Input Capacitance
    1.4nF
  • Drain to Source Resistance
    200mOhm
  • Rds On Max
    200 mΩ
  • Height
    20.7mm
  • Length
    15.87mm
  • Width
    5.31mm
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
IRFP9140 Overview
A device's maximum input capacitance is 1400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 21A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-100V, and this device has a drain-to-source breakdown voltage of -100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 34 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 200mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 16 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IRFP9140 Features
a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 34 ns
single MOSFETs transistor is 200mOhm
a 100V drain to source voltage (Vdss)


IRFP9140 Applications
There are a lot of Vishay Siliconix
IRFP9140 applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRFP9140 More Descriptions
SILICONIX THT MOSFET PFET -100V -23A 200mΩ 150°C TO-247 IRFP9140
Trans MOSFET P-CH 100V 21A 3-Pin (3 Tab) TO-247AC
-100V SINGLE P-CHANNEL HEXFET POWER MOSFET IN A TO-247AC French Electronic Distributor since 1988
Product Comparison
The three parts on the right have similar specifications to IRFP9140.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Series
    Number of Elements
    Power Dissipation
    Nominal Vgs
    REACH SVHC
    Surface Mount
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    Terminal Finish
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    View Compare
  • IRFP9140
    IRFP9140
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247-3
    38.000013g
    -55°C~175°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    175°C
    -55°C
    -100V
    MOSFET (Metal Oxide)
    -21A
    1
    180W Tc
    Single
    16 ns
    P-Channel
    200mOhm @ 13A, 10V
    4V @ 250μA
    1400pF @ 25V
    21A Tc
    61nC @ 10V
    73ns
    100V
    10V
    ±20V
    57 ns
    34 ns
    21A
    20V
    -100V
    1.4nF
    200mOhm
    200 mΩ
    20.7mm
    15.87mm
    5.31mm
    No
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFP064VPBF
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247AC
    -
    -55°C~175°C TJ
    Bulk
    2004
    Obsolete
    1 (Unlimited)
    175°C
    -55°C
    60V
    MOSFET (Metal Oxide)
    130A
    -
    250W Tc
    Single
    26 ns
    N-Channel
    5.5mOhm @ 78A, 10V
    4V @ 250μA
    6760pF @ 25V
    130A Tc
    260nC @ 10V
    200ns
    60V
    10V
    ±20V
    150 ns
    100 ns
    130A
    20V
    60V
    6.76nF
    5.5mOhm
    5.5 mΩ
    -
    -
    -
    No
    RoHS Compliant
    Lead Free
    HEXFET®
    1
    250W
    4 V
    No SVHC
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFP150
    -
    Through Hole
    TO-247-3
    -
    -
    -
    -55°C~175°C TJ
    Tube
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    230W Tc
    -
    -
    N-Channel
    55m Ω @ 25A, 10V
    4V @ 250μA
    2.8pF @ 25V
    41A Tc
    140nC @ 10V
    -
    100V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    1
    -
    -
    -
    NO
    SILICON
    e0
    no
    3
    TIN LEAD
    SINGLE
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    R-PSFM-T3
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    40A
    0.055Ohm
    160A
    100V
  • IRFP450B
    -
    Through Hole
    TO-3P-3, SC-65-3
    -
    TO-3P
    -
    -55°C~150°C TJ
    Tube
    2001
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    205W Tc
    -
    -
    N-Channel
    390mOhm @ 7A, 10V
    4V @ 250μA
    3800pF @ 25V
    14A Tc
    113nC @ 10V
    -
    500V
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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