Vishay Siliconix IRFP9140
- Part Number:
- IRFP9140
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3813696-IRFP9140
- Description:
- MOSFET P-CH 100V 21A TO-247AC
- Datasheet:
- IRFP9140
Vishay Siliconix IRFP9140 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFP9140.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Supplier Device PackageTO-247-3
- Weight38.000013g
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2016
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- Voltage - Rated DC-100V
- TechnologyMOSFET (Metal Oxide)
- Current Rating-21A
- Number of Channels1
- Power Dissipation-Max180W Tc
- Element ConfigurationSingle
- Turn On Delay Time16 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs200mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1400pF @ 25V
- Current - Continuous Drain (Id) @ 25°C21A Tc
- Gate Charge (Qg) (Max) @ Vgs61nC @ 10V
- Rise Time73ns
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)57 ns
- Turn-Off Delay Time34 ns
- Continuous Drain Current (ID)21A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-100V
- Input Capacitance1.4nF
- Drain to Source Resistance200mOhm
- Rds On Max200 mΩ
- Height20.7mm
- Length15.87mm
- Width5.31mm
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRFP9140 Overview
A device's maximum input capacitance is 1400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 21A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-100V, and this device has a drain-to-source breakdown voltage of -100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 34 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 200mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 16 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFP9140 Features
a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 34 ns
single MOSFETs transistor is 200mOhm
a 100V drain to source voltage (Vdss)
IRFP9140 Applications
There are a lot of Vishay Siliconix
IRFP9140 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 1400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 21A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-100V, and this device has a drain-to-source breakdown voltage of -100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 34 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 200mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 16 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFP9140 Features
a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 34 ns
single MOSFETs transistor is 200mOhm
a 100V drain to source voltage (Vdss)
IRFP9140 Applications
There are a lot of Vishay Siliconix
IRFP9140 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRFP9140 More Descriptions
SILICONIX THT MOSFET PFET -100V -23A 200mΩ 150°C TO-247 IRFP9140
Trans MOSFET P-CH 100V 21A 3-Pin (3 Tab) TO-247AC
-100V SINGLE P-CHANNEL HEXFET POWER MOSFET IN A TO-247ACFrench Electronic Distributor since 1988
Trans MOSFET P-CH 100V 21A 3-Pin (3 Tab) TO-247AC
-100V SINGLE P-CHANNEL HEXFET POWER MOSFET IN A TO-247AC
The three parts on the right have similar specifications to IRFP9140.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ChannelsPower Dissipation-MaxElement ConfigurationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningRoHS StatusLead FreeSeriesNumber of ElementsPower DissipationNominal VgsREACH SVHCSurface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinView Compare
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IRFP9140Through HoleThrough HoleTO-247-33TO-247-338.000013g-55°C~175°C TJTube2016Obsolete1 (Unlimited)175°C-55°C-100VMOSFET (Metal Oxide)-21A1180W TcSingle16 nsP-Channel200mOhm @ 13A, 10V4V @ 250μA1400pF @ 25V21A Tc61nC @ 10V73ns100V10V±20V57 ns34 ns21A20V-100V1.4nF200mOhm200 mΩ20.7mm15.87mm5.31mmNoNon-RoHS CompliantContains Lead--------------------------
-
Through HoleThrough HoleTO-247-33TO-247AC--55°C~175°C TJBulk2004Obsolete1 (Unlimited)175°C-55°C60VMOSFET (Metal Oxide)130A-250W TcSingle26 nsN-Channel5.5mOhm @ 78A, 10V4V @ 250μA6760pF @ 25V130A Tc260nC @ 10V200ns60V10V±20V150 ns100 ns130A20V60V6.76nF5.5mOhm5.5 mΩ---NoRoHS CompliantLead FreeHEXFET®1250W4 VNo SVHC--------------------
-
-Through HoleTO-247-3----55°C~175°C TJTube-Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--230W Tc--N-Channel55m Ω @ 25A, 10V4V @ 250μA2.8pF @ 25V41A Tc140nC @ 10V-100V10V±20V------------Non-RoHS Compliant--1---NOSILICONe0no3TIN LEADSINGLENOT SPECIFIEDunknownNOT SPECIFIEDR-PSFM-T3COMMERCIALSINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING40A0.055Ohm160A100V
-
-Through HoleTO-3P-3, SC-65-3-TO-3P--55°C~150°C TJTube2001Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--205W Tc--N-Channel390mOhm @ 7A, 10V4V @ 250μA3800pF @ 25V14A Tc113nC @ 10V-500V10V±30V---------------------------------------
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