Infineon Technologies IRFP7530PBF
- Part Number:
- IRFP7530PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2479421-IRFP7530PBF
- Description:
- MOSFET N CH 60V 195A TO247
- ECAD Model:
-
- Datasheet:
- IRFP7530PBF
Infineon Technologies IRFP7530PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFP7530PBF.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Weight38.000013g
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®, StrongIRFET™
- Published2013
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Number of Channels1
- Power Dissipation-Max341W Tc
- Element ConfigurationSingle
- Power Dissipation341W
- Turn On Delay Time52 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs2m Ω @ 100A, 10V
- Vgs(th) (Max) @ Id3.7V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds13703pF @ 25V
- Current - Continuous Drain (Id) @ 25°C195A Tc
- Gate Charge (Qg) (Max) @ Vgs411nC @ 10V
- Rise Time141ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)6V 10V
- Vgs (Max)±20V
- Fall Time (Typ)104 ns
- Turn-Off Delay Time172 ns
- Continuous Drain Current (ID)195A
- Threshold Voltage3.7V
- Gate to Source Voltage (Vgs)20V
- Height20.7mm
- Length15.87mm
- Width5.31mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFP7530PBF Description
The IRFP7530PBF is an N-channel HEXFET? Power MOSFET with increased gate, avalanche, and dynamic dV/dt robustness. It can be used in battery-powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, DC-to-AC inverters, DC-to-DC and AC-to-DC converters, and DC-to-AC inverters.
IRFP7530PBF Features
Enhanced body diode dV/dt and di/dt capability
Fully characterized capacitance including effective COSS to simplify design
IRFP7530PBF Applications
DC/AC Inverters
Battery-powered circuits
DC/DC and AC/DC converters
BLDC Motor drive applications
Resonant mode power supplies
Brushed Motor drive applications
Synchronous rectifier applications
Half-bridge and full-bridge topologies
OR-ing and redundant power switches
The IRFP7530PBF is an N-channel HEXFET? Power MOSFET with increased gate, avalanche, and dynamic dV/dt robustness. It can be used in battery-powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, DC-to-AC inverters, DC-to-DC and AC-to-DC converters, and DC-to-AC inverters.
IRFP7530PBF Features
Enhanced body diode dV/dt and di/dt capability
Fully characterized capacitance including effective COSS to simplify design
IRFP7530PBF Applications
DC/AC Inverters
Battery-powered circuits
DC/DC and AC/DC converters
BLDC Motor drive applications
Resonant mode power supplies
Brushed Motor drive applications
Synchronous rectifier applications
Half-bridge and full-bridge topologies
OR-ing and redundant power switches
IRFP7530PBF More Descriptions
60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-247AC package, TO247-3, RoHSInfineon SCT
Single N-Channel 60 V 2 mOhm 274 nC HEXFET® Power Mosfet - TO-247-3
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
Single N-Channel 60 V 2 mOhm 274 nC HEXFET® Power Mosfet - TO-247-3
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
The three parts on the right have similar specifications to IRFP7530PBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeSubcategoryTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)HeightLengthWidthREACH SVHCRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCCurrent RatingDrain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxRadiation HardeningView Compare
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IRFP7530PBF12 WeeksThrough HoleThrough HoleTO-247-3338.000013g-55°C~175°C TJTubeHEXFET®, StrongIRFET™2013Active1 (Unlimited)EAR99FET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED1341W TcSingle341W52 nsN-Channel2m Ω @ 100A, 10V3.7V @ 250μA13703pF @ 25V195A Tc411nC @ 10V141ns60V6V 10V±20V104 ns172 ns195A3.7V20V20.7mm15.87mm5.31mmNo SVHCROHS3 CompliantLead Free----------- -
--Through HoleTO-3P-3, SC-65-3---55°C~150°C TJTube-2001Obsolete1 (Unlimited)--MOSFET (Metal Oxide)---205W Tc---N-Channel390mOhm @ 7A, 10V4V @ 250μA3800pF @ 25V14A Tc113nC @ 10V-500V10V±30V-----------TO-3P---------
-
-Through HoleThrough HoleTO-247-3338.000013g-55°C~150°C TJTube-1997Obsolete1 (Unlimited)--MOSFET (Metal Oxide)--1150W TcSingle150W8.7 nsN-Channel630mOhm @ 5.7A, 10V4V @ 250μA1400pF @ 25V9.5A Tc80nC @ 10V28ns450V10V±20V27 ns58 ns9.5A4V20V20.7mm15.87mm5.31mmUnknownROHS3 CompliantLead FreeTO-247-3150°C-55°C450V9.5A450V1.4nF630mOhm630 mΩ-
-
-Through HoleThrough HoleTO-247-3-38.000013g-55°C~150°C TJTube-2014Obsolete1 (Unlimited)--MOSFET (Metal Oxide)--1460W TcSingle-28 nsN-Channel160mOhm @ 32A, 10V5V @ 250μA5280pF @ 25V32A Tc190nC @ 10V120ns500V10V±30V54 ns48 ns32A-30V20.7mm15.87mm5.31mm-Non-RoHS CompliantContains LeadTO-247-3150°C-55°C500V32A500V5.28nF160mOhm160 mΩNo
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