Vishay Siliconix IRFP460PBF
- Part Number:
- IRFP460PBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3813670-IRFP460PBF
- Description:
- MOSFET N-CH 500V 20A TO-247AC
- Datasheet:
- IRFP460PBF
Vishay Siliconix IRFP460PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFP460PBF.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Supplier Device PackageTO-247-3
- Weight38.000013g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2002
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance270MOhm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC500V
- TechnologyMOSFET (Metal Oxide)
- Current Rating20A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max280W Tc
- Element ConfigurationSingle
- Power Dissipation280W
- Turn On Delay Time18 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs270mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4200pF @ 25V
- Current - Continuous Drain (Id) @ 25°C20A Tc
- Gate Charge (Qg) (Max) @ Vgs210nC @ 10V
- Rise Time59ns
- Drain to Source Voltage (Vdss)500V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)58 ns
- Turn-Off Delay Time110 ns
- Continuous Drain Current (ID)20A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage500V
- Input Capacitance4.2nF
- Recovery Time860 ns
- Drain to Source Resistance270mOhm
- Rds On Max270 mΩ
- Nominal Vgs4 V
- Height20.7mm
- Length15.87mm
- Width5.31mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFP460PBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4200pF @ 25V.This device has a continuous drain current (ID) of [20A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 110 ns.MOSFETs have 270mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 18 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFP460PBF Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 110 ns
single MOSFETs transistor is 270mOhm
a threshold voltage of 4V
a 500V drain to source voltage (Vdss)
IRFP460PBF Applications
There are a lot of Vishay Siliconix
IRFP460PBF applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4200pF @ 25V.This device has a continuous drain current (ID) of [20A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 110 ns.MOSFETs have 270mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 18 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFP460PBF Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 110 ns
single MOSFETs transistor is 270mOhm
a threshold voltage of 4V
a 500V drain to source voltage (Vdss)
IRFP460PBF Applications
There are a lot of Vishay Siliconix
IRFP460PBF applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IRFP460PBF More Descriptions
Mosfet Transistor, N Channel, 20 A, 500 V, 270 Mohm, 10 V, 4 V Rohs Compliant: Yes
Single N-Channel 500 V 0.27 Ohm Flange Mount Power Mosfet - TO-247
Single-Gate MOSFET Transistors 500V Sgl N-Channel HEXFET
Trans MOSFET N-CH 500V 20A 3-Pin(3 Tab) TO-247AC
IRFP460PBF,500V SINGLE N-CHANN EL HEXFET POWER MOSFET,TO-247
MOSFET N-CH 500V 20A TO-247AC | Siliconix / Vishay IRFP460PBF
N-Ch 500V 20A 280W 0,27R TO247AC
500V 20A 270mΩ@10V,12A 280W N Channel TO-247AC-3 MOSFETs ROHS
French Electronic Distributor since 1988
NCHAN, TO-247AC, 500V IRFP460PBF
Single N-Channel 500 V 0.27 Ohm Flange Mount Power Mosfet - TO-247
Single-Gate MOSFET Transistors 500V Sgl N-Channel HEXFET
Trans MOSFET N-CH 500V 20A 3-Pin(3 Tab) TO-247AC
IRFP460PBF,500V SINGLE N-CHANN EL HEXFET POWER MOSFET,TO-247
MOSFET N-CH 500V 20A TO-247AC | Siliconix / Vishay IRFP460PBF
N-Ch 500V 20A 280W 0,27R TO247AC
500V 20A 270mΩ@10V,12A 280W N Channel TO-247AC-3 MOSFETs ROHS
French Electronic Distributor since 1988
NCHAN, TO-247AC, 500V IRFP460PBF
The three parts on the right have similar specifications to IRFP460PBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceRecovery TimeDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeView Compare
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IRFP460PBF12 WeeksThrough HoleThrough HoleTO-247-33TO-247-338.000013g-55°C~150°C TJTube2002Active1 (Unlimited)270MOhm150°C-55°C500VMOSFET (Metal Oxide)20A11280W TcSingle280W18 nsN-Channel270mOhm @ 12A, 10V4V @ 250μA4200pF @ 25V20A Tc210nC @ 10V59ns500V10V±20V58 ns110 ns20A4V20V500V4.2nF860 ns270mOhm270 mΩ4 V20.7mm15.87mm5.31mmUnknownNoROHS3 CompliantLead Free-
-
--Through HoleTO-3P-3, SC-65-3-TO-3P--55°C~150°C TJTube2001Obsolete1 (Unlimited)----MOSFET (Metal Oxide)---205W Tc---N-Channel390mOhm @ 7A, 10V4V @ 250μA3800pF @ 25V14A Tc113nC @ 10V-500V10V±30V------------------
-
-Through HoleThrough HoleTO-247-33TO-247-338.000013g-55°C~150°C TJTube1997Obsolete1 (Unlimited)-150°C-55°C450VMOSFET (Metal Oxide)9.5A-1150W TcSingle150W8.7 nsN-Channel630mOhm @ 5.7A, 10V4V @ 250μA1400pF @ 25V9.5A Tc80nC @ 10V28ns450V10V±20V27 ns58 ns9.5A4V20V450V1.4nF-630mOhm630 mΩ-20.7mm15.87mm5.31mmUnknown-ROHS3 CompliantLead Free
-
-Through HoleThrough HoleTO-247-3-TO-247-338.000013g-55°C~150°C TJTube2014Obsolete1 (Unlimited)-150°C-55°C500VMOSFET (Metal Oxide)32A-1460W TcSingle-28 nsN-Channel160mOhm @ 32A, 10V5V @ 250μA5280pF @ 25V32A Tc190nC @ 10V120ns500V10V±30V54 ns48 ns32A-30V500V5.28nF-160mOhm160 mΩ-20.7mm15.87mm5.31mm-NoNon-RoHS CompliantContains Lead
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