IRFP460LCPBF

Vishay Siliconix IRFP460LCPBF

Part Number:
IRFP460LCPBF
Manufacturer:
Vishay Siliconix
Ventron No:
2478420-IRFP460LCPBF
Description:
MOSFET N-CH 500V 20A TO-247AC
ECAD Model:
Datasheet:
IRFP460LCPBF

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Specifications
Vishay Siliconix IRFP460LCPBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFP460LCPBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-247-3
  • Weight
    38.000013g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2011
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    270mOhm
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    500V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    20A
  • Number of Elements
    1
  • Number of Channels
    1
  • Voltage
    500V
  • Power Dissipation-Max
    280W Tc
  • Element Configuration
    Single
  • Current
    20A
  • Power Dissipation
    280W
  • Turn On Delay Time
    18 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    270mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3600pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    20A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    120nC @ 10V
  • Rise Time
    77ns
  • Drain to Source Voltage (Vdss)
    500V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    43 ns
  • Turn-Off Delay Time
    40 ns
  • Continuous Drain Current (ID)
    20A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    500V
  • Input Capacitance
    3.6nF
  • Drain to Source Resistance
    270mOhm
  • Rds On Max
    270 mΩ
  • Nominal Vgs
    4 V
  • Height
    20.7mm
  • Length
    15.87mm
  • Width
    5.31mm
  • REACH SVHC
    Unknown
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFP460LCPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3600pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.As a result of its turn-off delay time, which is 40 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 270mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 18 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRFP460LCPBF Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 40 ns
single MOSFETs transistor is 270mOhm
a threshold voltage of 4V
a 500V drain to source voltage (Vdss)


IRFP460LCPBF Applications
There are a lot of Vishay Siliconix
IRFP460LCPBF applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IRFP460LCPBF More Descriptions
Single N-Channel 500 V 0.27 Ohms Flange Mount Power Mosfet - TO-247
MOSFET N-CH 500V 20A TO-247AC / Trans MOSFET N-CH 500V 20A 3-Pin(3 Tab) TO-247AC
Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
N CHANNEL MOSFET, 500V, 20A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Current Id:20A; Transistor
MOSFET, N, 500V, 20A, TO-247AC; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.27ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 280W; Transistor Case Style: TO-247AC; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: 20A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Junction to Case Thermal Resistance A: 0.45°C/W; Lead Spacing: 5.45mm; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pulse Current Idm: 80A; Termination Type: Through Hole; Voltage Vds Typ: 500V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V
Product Comparison
The three parts on the right have similar specifications to IRFP460LCPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Number of Channels
    Voltage
    Power Dissipation-Max
    Element Configuration
    Current
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Radiation Hardening
    View Compare
  • IRFP460LCPBF
    IRFP460LCPBF
    12 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    2011
    Active
    1 (Unlimited)
    270mOhm
    150°C
    -55°C
    500V
    MOSFET (Metal Oxide)
    20A
    1
    1
    500V
    280W Tc
    Single
    20A
    280W
    18 ns
    N-Channel
    270mOhm @ 12A, 10V
    4V @ 250μA
    3600pF @ 25V
    20A Tc
    120nC @ 10V
    77ns
    500V
    10V
    ±30V
    43 ns
    40 ns
    20A
    4V
    30V
    500V
    3.6nF
    270mOhm
    270 mΩ
    4 V
    20.7mm
    15.87mm
    5.31mm
    Unknown
    ROHS3 Compliant
    Lead Free
    -
    -
  • IRFP350LC
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    -
    150°C
    -55°C
    -
    MOSFET (Metal Oxide)
    -
    1
    1
    -
    190W Tc
    Single
    -
    190W
    14 ns
    N-Channel
    300mOhm @ 9.6A, 10V
    4V @ 250μA
    2200pF @ 25V
    16A Tc
    76nC @ 10V
    54ns
    400V
    10V
    ±30V
    35 ns
    33 ns
    16A
    4V
    30V
    400V
    2.2nF
    300mOhm
    300 mΩ
    4 V
    20.7mm
    15.87mm
    5.31mm
    Unknown
    Non-RoHS Compliant
    -
    No
  • IRFP344PBF
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    1997
    Obsolete
    1 (Unlimited)
    -
    150°C
    -55°C
    450V
    MOSFET (Metal Oxide)
    9.5A
    -
    1
    -
    150W Tc
    Single
    -
    150W
    8.7 ns
    N-Channel
    630mOhm @ 5.7A, 10V
    4V @ 250μA
    1400pF @ 25V
    9.5A Tc
    80nC @ 10V
    28ns
    450V
    10V
    ±20V
    27 ns
    58 ns
    9.5A
    4V
    20V
    450V
    1.4nF
    630mOhm
    630 mΩ
    -
    20.7mm
    15.87mm
    5.31mm
    Unknown
    ROHS3 Compliant
    Lead Free
    -
  • IRFP32N50K
    -
    Through Hole
    Through Hole
    TO-247-3
    -
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    2014
    Obsolete
    1 (Unlimited)
    -
    150°C
    -55°C
    500V
    MOSFET (Metal Oxide)
    32A
    -
    1
    -
    460W Tc
    Single
    -
    -
    28 ns
    N-Channel
    160mOhm @ 32A, 10V
    5V @ 250μA
    5280pF @ 25V
    32A Tc
    190nC @ 10V
    120ns
    500V
    10V
    ±30V
    54 ns
    48 ns
    32A
    -
    30V
    500V
    5.28nF
    160mOhm
    160 mΩ
    -
    20.7mm
    15.87mm
    5.31mm
    -
    Non-RoHS Compliant
    Contains Lead
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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