Vishay Siliconix IRFP460APBF
- Part Number:
- IRFP460APBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2478430-IRFP460APBF
- Description:
- MOSFET N-CH 500V 20A TO-247AC
- Datasheet:
- IRFP460APBF
Vishay Siliconix IRFP460APBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFP460APBF.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Weight38.000013g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2007
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Resistance270mOhm
- Voltage - Rated DC500V
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)260
- Current Rating20A
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max280W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation280W
- Turn On Delay Time18 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs270m Ω @ 12A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds3100pF @ 25V
- Current - Continuous Drain (Id) @ 25°C20A Tc
- Gate Charge (Qg) (Max) @ Vgs105nC @ 10V
- Rise Time55ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)39 ns
- Turn-Off Delay Time45 ns
- Continuous Drain Current (ID)20A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage500V
- Pulsed Drain Current-Max (IDM)80A
- Avalanche Energy Rating (Eas)960 mJ
- Max Junction Temperature (Tj)150°C
- Nominal Vgs2 V
- Height25.11mm
- Length15.87mm
- Width5.31mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFP460APBF Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 960 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3100pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 20A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.It is [45 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 80A.A turn-on delay time of 18 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRFP460APBF Features
the avalanche energy rating (Eas) is 960 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 80A.
a threshold voltage of 4V
IRFP460APBF Applications
There are a lot of Vishay Siliconix
IRFP460APBF applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 960 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3100pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 20A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.It is [45 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 80A.A turn-on delay time of 18 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRFP460APBF Features
the avalanche energy rating (Eas) is 960 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 80A.
a threshold voltage of 4V
IRFP460APBF Applications
There are a lot of Vishay Siliconix
IRFP460APBF applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IRFP460APBF More Descriptions
Single N-Channel 500 V 0.27 Ohms Flange Mount Power Mosfet - TO-247
Trans MOSFET N-CH 500V 20A 3-Pin(3 Tab) TO-247AC / MOSFET N-CH 500V 20A TO-247AC
IRFP460APBF N-channel MOSFET Transistor, 20 A, 500 V, 3-Pin TO-247AC | Siliconix / Vishay IRFP460APBF
Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
N Channel Mosfet, 500V, 20A, To-247; Transistor Polarity:n Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:20A; On Resistance Rds(On):0.27Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: No
MOSFET, N, 500V, 20A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:500V; On Resistance Rds(on):270mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:280W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:20A; Junction to Case Thermal Resistance A:0.45°C/W; Package / Case:TO-247AC; Power Dissipation Pd:280W; Power Dissipation Pd:280W; Pulse Current Idm:80A; Termination Type:Through Hole; Voltage Vds:500V; Voltage Vds Typ:500V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Trans MOSFET N-CH 500V 20A 3-Pin(3 Tab) TO-247AC / MOSFET N-CH 500V 20A TO-247AC
IRFP460APBF N-channel MOSFET Transistor, 20 A, 500 V, 3-Pin TO-247AC | Siliconix / Vishay IRFP460APBF
Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
N Channel Mosfet, 500V, 20A, To-247; Transistor Polarity:n Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:20A; On Resistance Rds(On):0.27Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: No
MOSFET, N, 500V, 20A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:500V; On Resistance Rds(on):270mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:280W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:20A; Junction to Case Thermal Resistance A:0.45°C/W; Package / Case:TO-247AC; Power Dissipation Pd:280W; Power Dissipation Pd:280W; Pulse Current Idm:80A; Termination Type:Through Hole; Voltage Vds:500V; Voltage Vds Typ:500V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
The three parts on the right have similar specifications to IRFP460APBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsResistanceVoltage - Rated DCTechnologyPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Max Junction Temperature (Tj)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeJESD-609 CodePbfree CodeECCN CodeTerminal FinishQualification StatusCase ConnectionSupplier Device PackageMax Operating TemperatureMin Operating TemperatureDrain to Source Voltage (Vdss)Input CapacitanceDrain to Source ResistanceRds On MaxView Compare
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IRFP460APBF12 WeeksThrough HoleThrough HoleTO-247-3338.000013gSILICON-55°C~150°C TJTube2007Active1 (Unlimited)3270mOhm500VMOSFET (Metal Oxide)26020A40311280W TcSingleENHANCEMENT MODE280W18 nsN-ChannelSWITCHING270m Ω @ 12A, 10V4V @ 250μA3100pF @ 25V20A Tc105nC @ 10V55ns10V±30V39 ns45 ns20A4V30V500V80A960 mJ150°C2 V25.11mm15.87mm5.31mmUnknownNoROHS3 CompliantLead Free--------------
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-Through HoleThrough HoleTO-247-3338.000013gSILICON-55°C~175°C TJTube2016Obsolete1 (Unlimited)3-60VMOSFET (Metal Oxide)NOT SPECIFIED70ANOT SPECIFIED311230W TcSingleENHANCEMENT MODE230W20 nsN-ChannelSWITCHING14m Ω @ 54A, 10V4V @ 250μA4500pF @ 25V70A Tc160nC @ 10V160ns10V±20V150 ns83 ns70A-20V60V----20.7mm15.87mm5.31mm--Non-RoHS CompliantContains Leade0noEAR99TIN LEADNot QualifiedDRAIN-------
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-Through HoleThrough HoleTO-247-3338.000013g--55°C~150°C TJTube2016Obsolete1 (Unlimited)---MOSFET (Metal Oxide)----11190W TcSingle-190W14 nsN-Channel-300mOhm @ 9.6A, 10V4V @ 250μA2200pF @ 25V16A Tc76nC @ 10V54ns10V±30V35 ns33 ns16A4V30V400V---4 V20.7mm15.87mm5.31mmUnknownNoNon-RoHS Compliant-------TO-247-3150°C-55°C400V2.2nF300mOhm300 mΩ
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-Through HoleThrough HoleTO-247-3338.000013g--55°C~150°C TJTube2015Obsolete1 (Unlimited)--400VMOSFET (Metal Oxide)-16A---1190W TcSingle-190W16 nsN-Channel-300mOhm @ 9.6A, 10V4V @ 250μA2600pF @ 25V16A Tc150nC @ 10V49ns10V±20V47 ns87 ns16A-20V400V----20.7mm15.87mm5.31mm--Non-RoHS CompliantContains Lead------TO-247-3150°C-55°C400V2.6nF300mOhm300 mΩ
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