IRFP460APBF

Vishay Siliconix IRFP460APBF

Part Number:
IRFP460APBF
Manufacturer:
Vishay Siliconix
Ventron No:
2478430-IRFP460APBF
Description:
MOSFET N-CH 500V 20A TO-247AC
ECAD Model:
Datasheet:
IRFP460APBF

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Specifications
Vishay Siliconix IRFP460APBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFP460APBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Weight
    38.000013g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2007
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Resistance
    270mOhm
  • Voltage - Rated DC
    500V
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    20A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    280W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    280W
  • Turn On Delay Time
    18 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    270m Ω @ 12A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3100pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    20A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    105nC @ 10V
  • Rise Time
    55ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    39 ns
  • Turn-Off Delay Time
    45 ns
  • Continuous Drain Current (ID)
    20A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    500V
  • Pulsed Drain Current-Max (IDM)
    80A
  • Avalanche Energy Rating (Eas)
    960 mJ
  • Max Junction Temperature (Tj)
    150°C
  • Nominal Vgs
    2 V
  • Height
    25.11mm
  • Length
    15.87mm
  • Width
    5.31mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFP460APBF Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 960 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3100pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 20A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.It is [45 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 80A.A turn-on delay time of 18 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

IRFP460APBF Features
the avalanche energy rating (Eas) is 960 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 80A.
a threshold voltage of 4V


IRFP460APBF Applications
There are a lot of Vishay Siliconix
IRFP460APBF applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IRFP460APBF More Descriptions
Single N-Channel 500 V 0.27 Ohms Flange Mount Power Mosfet - TO-247
Trans MOSFET N-CH 500V 20A 3-Pin(3 Tab) TO-247AC / MOSFET N-CH 500V 20A TO-247AC
IRFP460APBF N-channel MOSFET Transistor, 20 A, 500 V, 3-Pin TO-247AC | Siliconix / Vishay IRFP460APBF
Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
N Channel Mosfet, 500V, 20A, To-247; Transistor Polarity:n Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:20A; On Resistance Rds(On):0.27Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: No
MOSFET, N, 500V, 20A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:500V; On Resistance Rds(on):270mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:280W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:20A; Junction to Case Thermal Resistance A:0.45°C/W; Package / Case:TO-247AC; Power Dissipation Pd:280W; Power Dissipation Pd:280W; Pulse Current Idm:80A; Termination Type:Through Hole; Voltage Vds:500V; Voltage Vds Typ:500V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Product Comparison
The three parts on the right have similar specifications to IRFP460APBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Resistance
    Voltage - Rated DC
    Technology
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    JESD-609 Code
    Pbfree Code
    ECCN Code
    Terminal Finish
    Qualification Status
    Case Connection
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Drain to Source Voltage (Vdss)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    View Compare
  • IRFP460APBF
    IRFP460APBF
    12 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    38.000013g
    SILICON
    -55°C~150°C TJ
    Tube
    2007
    Active
    1 (Unlimited)
    3
    270mOhm
    500V
    MOSFET (Metal Oxide)
    260
    20A
    40
    3
    1
    1
    280W Tc
    Single
    ENHANCEMENT MODE
    280W
    18 ns
    N-Channel
    SWITCHING
    270m Ω @ 12A, 10V
    4V @ 250μA
    3100pF @ 25V
    20A Tc
    105nC @ 10V
    55ns
    10V
    ±30V
    39 ns
    45 ns
    20A
    4V
    30V
    500V
    80A
    960 mJ
    150°C
    2 V
    25.11mm
    15.87mm
    5.31mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFP054
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    38.000013g
    SILICON
    -55°C~175°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    3
    -
    60V
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    70A
    NOT SPECIFIED
    3
    1
    1
    230W Tc
    Single
    ENHANCEMENT MODE
    230W
    20 ns
    N-Channel
    SWITCHING
    14m Ω @ 54A, 10V
    4V @ 250μA
    4500pF @ 25V
    70A Tc
    160nC @ 10V
    160ns
    10V
    ±20V
    150 ns
    83 ns
    70A
    -
    20V
    60V
    -
    -
    -
    -
    20.7mm
    15.87mm
    5.31mm
    -
    -
    Non-RoHS Compliant
    Contains Lead
    e0
    no
    EAR99
    TIN LEAD
    Not Qualified
    DRAIN
    -
    -
    -
    -
    -
    -
    -
  • IRFP350LC
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    38.000013g
    -
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    1
    1
    190W Tc
    Single
    -
    190W
    14 ns
    N-Channel
    -
    300mOhm @ 9.6A, 10V
    4V @ 250μA
    2200pF @ 25V
    16A Tc
    76nC @ 10V
    54ns
    10V
    ±30V
    35 ns
    33 ns
    16A
    4V
    30V
    400V
    -
    -
    -
    4 V
    20.7mm
    15.87mm
    5.31mm
    Unknown
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    TO-247-3
    150°C
    -55°C
    400V
    2.2nF
    300mOhm
    300 mΩ
  • IRFP350
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    38.000013g
    -
    -55°C~150°C TJ
    Tube
    2015
    Obsolete
    1 (Unlimited)
    -
    -
    400V
    MOSFET (Metal Oxide)
    -
    16A
    -
    -
    -
    1
    190W Tc
    Single
    -
    190W
    16 ns
    N-Channel
    -
    300mOhm @ 9.6A, 10V
    4V @ 250μA
    2600pF @ 25V
    16A Tc
    150nC @ 10V
    49ns
    10V
    ±20V
    47 ns
    87 ns
    16A
    -
    20V
    400V
    -
    -
    -
    -
    20.7mm
    15.87mm
    5.31mm
    -
    -
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    TO-247-3
    150°C
    -55°C
    400V
    2.6nF
    300mOhm
    300 mΩ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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