Vishay Siliconix IRFP460A
- Part Number:
- IRFP460A
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3554627-IRFP460A
- Description:
- MOSFET N-CH 500V 20A TO-247AC
- Datasheet:
- IRFP460A
Vishay Siliconix IRFP460A technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFP460A.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Supplier Device PackageTO-247-3
- Weight38.000013g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2015
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC500V
- TechnologyMOSFET (Metal Oxide)
- Current Rating20A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max280W Tc
- Element ConfigurationSingle
- Power Dissipation280W
- Turn On Delay Time18 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs270mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds3100pF @ 25V
- Current - Continuous Drain (Id) @ 25°C20A Tc
- Gate Charge (Qg) (Max) @ Vgs105nC @ 10V
- Rise Time55ns
- Drain to Source Voltage (Vdss)500V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)39 ns
- Turn-Off Delay Time45 ns
- Continuous Drain Current (ID)20A
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage500V
- Input Capacitance3.1nF
- Drain to Source Resistance270mOhm
- Rds On Max270 mΩ
- Height20.7mm
- Length15.87mm
- Width5.31mm
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRFP460A Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3100pF @ 25V.This device has a continuous drain current (ID) of [20A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 45 ns.MOSFETs have 270mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 18 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFP460A Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 45 ns
single MOSFETs transistor is 270mOhm
a 500V drain to source voltage (Vdss)
IRFP460A Applications
There are a lot of Vishay Siliconix
IRFP460A applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3100pF @ 25V.This device has a continuous drain current (ID) of [20A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 45 ns.MOSFETs have 270mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 18 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFP460A Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 45 ns
single MOSFETs transistor is 270mOhm
a 500V drain to source voltage (Vdss)
IRFP460A Applications
There are a lot of Vishay Siliconix
IRFP460A applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IRFP460A More Descriptions
500V 20A SINGLE N-CHANNEL HEXFET POWER MOSFET IN A DIPower Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N TO-247; Transistor type:MOSFET; Voltage, Vds typ:500V; Current, Id cont:20A; Resistance, Rds on:0.27R; Case style:TO-247AC; Current, Idm pulse:80A; Pins, No. of:3; Power dissipation:280W; Power, Pd:280W; Transistor polarity:N; Voltage, Vds:500V; Voltage, Vds max:500V; Voltage, Vgs th max:4V
MOSFET, N TO-247; Transistor type:MOSFET; Voltage, Vds typ:500V; Current, Id cont:20A; Resistance, Rds on:0.27R; Case style:TO-247AC; Current, Idm pulse:80A; Pins, No. of:3; Power dissipation:280W; Power, Pd:280W; Transistor polarity:N; Voltage, Vds:500V; Voltage, Vds max:500V; Voltage, Vgs th max:4V
The three parts on the right have similar specifications to IRFP460A.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningRoHS StatusLead FreeNumber of PinsTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusOperating ModeCase ConnectionTransistor ApplicationThreshold VoltageNominal VgsREACH SVHCView Compare
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IRFP460AThrough HoleThrough HoleTO-247-3TO-247-338.000013g-55°C~150°C TJTube2015Obsolete1 (Unlimited)150°C-55°C500VMOSFET (Metal Oxide)20A11280W TcSingle280W18 nsN-Channel270mOhm @ 12A, 10V4V @ 250μA3100pF @ 25V20A Tc105nC @ 10V55ns500V10V±30V39 ns45 ns20A30V500V3.1nF270mOhm270 mΩ20.7mm15.87mm5.31mmNoNon-RoHS CompliantContains Lead------------------
-
Through HoleThrough HoleTO-247-3-38.000013g-55°C~175°C TJTube2016Obsolete1 (Unlimited)--60VMOSFET (Metal Oxide)70A11230W TcSingle230W20 nsN-Channel14m Ω @ 54A, 10V4V @ 250μA4500pF @ 25V70A Tc160nC @ 10V160ns-10V±20V150 ns83 ns70A20V60V---20.7mm15.87mm5.31mm-Non-RoHS CompliantContains Lead3SILICONe0no3EAR99TIN LEADNOT SPECIFIEDNOT SPECIFIED3Not QualifiedENHANCEMENT MODEDRAINSWITCHING---
-
Through HoleThrough HoleTO-247-3TO-247-338.000013g-55°C~150°C TJTube2016Obsolete1 (Unlimited)150°C-55°C-MOSFET (Metal Oxide)-11190W TcSingle190W14 nsN-Channel300mOhm @ 9.6A, 10V4V @ 250μA2200pF @ 25V16A Tc76nC @ 10V54ns400V10V±30V35 ns33 ns16A30V400V2.2nF300mOhm300 mΩ20.7mm15.87mm5.31mmNoNon-RoHS Compliant-3-------------4V4 VUnknown
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Through HoleThrough HoleTO-247-3TO-247-338.000013g-55°C~150°C TJTube2015Obsolete1 (Unlimited)150°C-55°C400VMOSFET (Metal Oxide)16A-1190W TcSingle190W16 nsN-Channel300mOhm @ 9.6A, 10V4V @ 250μA2600pF @ 25V16A Tc150nC @ 10V49ns400V10V±20V47 ns87 ns16A20V400V2.6nF300mOhm300 mΩ20.7mm15.87mm5.31mm-Non-RoHS CompliantContains Lead3----------------
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