Vishay Siliconix IRFP450A
- Part Number:
- IRFP450A
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2491595-IRFP450A
- Description:
- MOSFET N-CH 500V 14A TO-247AC
- Datasheet:
- IRFP450A
Vishay Siliconix IRFP450A technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFP450A.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Supplier Device PackageTO-247-3
- Weight38.000013g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2014
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC500V
- TechnologyMOSFET (Metal Oxide)
- Current Rating14A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max190W Tc
- Element ConfigurationSingle
- Power Dissipation190W
- Turn On Delay Time15 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs400mOhm @ 8.4A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2038pF @ 25V
- Current - Continuous Drain (Id) @ 25°C14A Tc
- Gate Charge (Qg) (Max) @ Vgs64nC @ 10V
- Rise Time36ns
- Drain to Source Voltage (Vdss)500V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)29 ns
- Turn-Off Delay Time35 ns
- Continuous Drain Current (ID)14A
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage500V
- Input Capacitance2.038nF
- Drain to Source Resistance400mOhm
- Rds On Max400 mΩ
- Height20.7mm
- Length15.87mm
- Width5.31mm
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRFP450A Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2038pF @ 25V.This device has a continuous drain current (ID) of [14A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 35 ns.MOSFETs have 400mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 15 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFP450A Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 35 ns
single MOSFETs transistor is 400mOhm
a 500V drain to source voltage (Vdss)
IRFP450A Applications
There are a lot of Vishay Siliconix
IRFP450A applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2038pF @ 25V.This device has a continuous drain current (ID) of [14A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 35 ns.MOSFETs have 400mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 15 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFP450A Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 35 ns
single MOSFETs transistor is 400mOhm
a 500V drain to source voltage (Vdss)
IRFP450A Applications
There are a lot of Vishay Siliconix
IRFP450A applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IRFP450A More Descriptions
Trans MOSFET N-CH 500V 14A 3-Pin (3 Tab) TO-247AC
IR IRFP450A IRFP450A FACTORY TUBES 25/TUBES D/C (DC):0226
MOSFET N-CHANNEL 500V
IR IRFP450A IRFP450A FACTORY TUBES 25/TUBES D/C (DC):0226
MOSFET N-CHANNEL 500V
The three parts on the right have similar specifications to IRFP450A.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningRoHS StatusLead FreeNumber of PinsSeriesNominal VgsREACH SVHCView Compare
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IRFP450AThrough HoleThrough HoleTO-247-3TO-247-338.000013g-55°C~150°C TJTube2014Obsolete1 (Unlimited)150°C-55°C500VMOSFET (Metal Oxide)14A11190W TcSingle190W15 nsN-Channel400mOhm @ 8.4A, 10V4V @ 250μA2038pF @ 25V14A Tc64nC @ 10V36ns500V10V±30V29 ns35 ns14A30V500V2.038nF400mOhm400 mΩ20.7mm15.87mm5.31mmNoNon-RoHS CompliantContains Lead-----
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Through HoleThrough HoleTO-247-3TO-247AC--55°C~175°C TJBulk2004Obsolete1 (Unlimited)175°C-55°C60VMOSFET (Metal Oxide)130A1-250W TcSingle250W26 nsN-Channel5.5mOhm @ 78A, 10V4V @ 250μA6760pF @ 25V130A Tc260nC @ 10V200ns60V10V±20V150 ns100 ns130A20V60V6.76nF5.5mOhm5.5 mΩ---NoRoHS CompliantLead Free3HEXFET®4 VNo SVHC
-
-Through HoleTO-3P-3, SC-65-3TO-3P--55°C~150°C TJTube2001Obsolete1 (Unlimited)---MOSFET (Metal Oxide)---205W Tc---N-Channel390mOhm @ 7A, 10V4V @ 250μA3800pF @ 25V14A Tc113nC @ 10V-500V10V±30V------------------
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Through HoleThrough HoleTO-247-3TO-247-338.000013g-55°C~150°C TJTube2015Obsolete1 (Unlimited)150°C-55°C400VMOSFET (Metal Oxide)16A-1190W TcSingle190W16 nsN-Channel300mOhm @ 9.6A, 10V4V @ 250μA2600pF @ 25V16A Tc150nC @ 10V49ns400V10V±20V47 ns87 ns16A20V400V2.6nF300mOhm300 mΩ20.7mm15.87mm5.31mm-Non-RoHS CompliantContains Lead3---
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