IRFP450A

Vishay Siliconix IRFP450A

Part Number:
IRFP450A
Manufacturer:
Vishay Siliconix
Ventron No:
2491595-IRFP450A
Description:
MOSFET N-CH 500V 14A TO-247AC
ECAD Model:
Datasheet:
IRFP450A

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Specifications
Vishay Siliconix IRFP450A technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFP450A.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247-3
  • Weight
    38.000013g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2014
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    500V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    14A
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    190W Tc
  • Element Configuration
    Single
  • Power Dissipation
    190W
  • Turn On Delay Time
    15 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    400mOhm @ 8.4A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2038pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    14A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    64nC @ 10V
  • Rise Time
    36ns
  • Drain to Source Voltage (Vdss)
    500V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    29 ns
  • Turn-Off Delay Time
    35 ns
  • Continuous Drain Current (ID)
    14A
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    500V
  • Input Capacitance
    2.038nF
  • Drain to Source Resistance
    400mOhm
  • Rds On Max
    400 mΩ
  • Height
    20.7mm
  • Length
    15.87mm
  • Width
    5.31mm
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
IRFP450A Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2038pF @ 25V.This device has a continuous drain current (ID) of [14A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 35 ns.MOSFETs have 400mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 15 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IRFP450A Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 35 ns
single MOSFETs transistor is 400mOhm
a 500V drain to source voltage (Vdss)


IRFP450A Applications
There are a lot of Vishay Siliconix
IRFP450A applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IRFP450A More Descriptions
Trans MOSFET N-CH 500V 14A 3-Pin (3 Tab) TO-247AC
IR IRFP450A IRFP450A FACTORY TUBES 25/TUBES D/C (DC):0226
MOSFET N-CHANNEL 500V
Product Comparison
The three parts on the right have similar specifications to IRFP450A.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Number of Pins
    Series
    Nominal Vgs
    REACH SVHC
    View Compare
  • IRFP450A
    IRFP450A
    Through Hole
    Through Hole
    TO-247-3
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    2014
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    500V
    MOSFET (Metal Oxide)
    14A
    1
    1
    190W Tc
    Single
    190W
    15 ns
    N-Channel
    400mOhm @ 8.4A, 10V
    4V @ 250μA
    2038pF @ 25V
    14A Tc
    64nC @ 10V
    36ns
    500V
    10V
    ±30V
    29 ns
    35 ns
    14A
    30V
    500V
    2.038nF
    400mOhm
    400 mΩ
    20.7mm
    15.87mm
    5.31mm
    No
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
  • IRFP064VPBF
    Through Hole
    Through Hole
    TO-247-3
    TO-247AC
    -
    -55°C~175°C TJ
    Bulk
    2004
    Obsolete
    1 (Unlimited)
    175°C
    -55°C
    60V
    MOSFET (Metal Oxide)
    130A
    1
    -
    250W Tc
    Single
    250W
    26 ns
    N-Channel
    5.5mOhm @ 78A, 10V
    4V @ 250μA
    6760pF @ 25V
    130A Tc
    260nC @ 10V
    200ns
    60V
    10V
    ±20V
    150 ns
    100 ns
    130A
    20V
    60V
    6.76nF
    5.5mOhm
    5.5 mΩ
    -
    -
    -
    No
    RoHS Compliant
    Lead Free
    3
    HEXFET®
    4 V
    No SVHC
  • IRFP450B
    -
    Through Hole
    TO-3P-3, SC-65-3
    TO-3P
    -
    -55°C~150°C TJ
    Tube
    2001
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    205W Tc
    -
    -
    -
    N-Channel
    390mOhm @ 7A, 10V
    4V @ 250μA
    3800pF @ 25V
    14A Tc
    113nC @ 10V
    -
    500V
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFP350
    Through Hole
    Through Hole
    TO-247-3
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    2015
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    400V
    MOSFET (Metal Oxide)
    16A
    -
    1
    190W Tc
    Single
    190W
    16 ns
    N-Channel
    300mOhm @ 9.6A, 10V
    4V @ 250μA
    2600pF @ 25V
    16A Tc
    150nC @ 10V
    49ns
    400V
    10V
    ±20V
    47 ns
    87 ns
    16A
    20V
    400V
    2.6nF
    300mOhm
    300 mΩ
    20.7mm
    15.87mm
    5.31mm
    -
    Non-RoHS Compliant
    Contains Lead
    3
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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