Infineon Technologies IRFP4410ZPBF
- Part Number:
- IRFP4410ZPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2493214-IRFP4410ZPBF
- Description:
- MOSFET N-CH 100V 97A TO-247AC
- ECAD Model:
-
- Datasheet:
- IRFP4410ZPBF
Infineon Technologies IRFP4410ZPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFP4410ZPBF.
- Factory Lead Time10 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingBulk
- SeriesHEXFET®
- Published2004
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationThrough Hole
- ECCN CodeEAR99
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Power Dissipation-Max230W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation230W
- Case ConnectionDRAIN
- Turn On Delay Time16 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs9m Ω @ 58A, 10V
- Vgs(th) (Max) @ Id4V @ 150μA
- Input Capacitance (Ciss) (Max) @ Vds4820pF @ 50V
- Current - Continuous Drain (Id) @ 25°C97A Tc
- Gate Charge (Qg) (Max) @ Vgs120nC @ 10V
- Rise Time52ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)57 ns
- Turn-Off Delay Time43 ns
- Continuous Drain Current (ID)97A
- Threshold Voltage4V
- JEDEC-95 CodeTO-247AC
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.009Ohm
- Drain to Source Breakdown Voltage100V
- Dual Supply Voltage100V
- Avalanche Energy Rating (Eas)242 mJ
- Recovery Time57 ns
- Nominal Vgs4 V
- Height20.7mm
- Length15.87mm
- Width5.3086mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFP4410ZPBF Description
IRFP4410ZPBF can improve Gate, Avalanche and Dynamic dV/dt Ruggedness.The device is fully characterized capacitance and avalanche SOA and enhanced body diode dV/dt and dI/dt Capability.It is Lead-Free and RoHS Compliant, Halogen-Free. IRFP4410ZPBF Applications
High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits IRFP4410ZPBF Features
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free
IRFP4410ZPBF can improve Gate, Avalanche and Dynamic dV/dt Ruggedness.The device is fully characterized capacitance and avalanche SOA and enhanced body diode dV/dt and dI/dt Capability.It is Lead-Free and RoHS Compliant, Halogen-Free. IRFP4410ZPBF Applications
High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits IRFP4410ZPBF Features
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free
IRFP4410ZPBF More Descriptions
IRFP4410ZPBF N-channel MOSFET Transistor, 97 A, 100 V, 3-Pin TO-247AC
Single N-Channel 100 V 9 mOhm 120 nC HEXFET® Power Mosfet - TO-247-3AC
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHSInfineon SCT
Trans MOSFET N-CH Si 100V 97A 3-Pin(3 Tab) TO-247AC Tube
Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:97A; Drain Source Voltage Vds:100V; On Resistance Rds(on):7.2mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:230W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:97A; Package / Case:TO-247AC; Power Dissipation Pd:230W; Pulse Current Idm:390A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Single N-Channel 100 V 9 mOhm 120 nC HEXFET® Power Mosfet - TO-247-3AC
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHSInfineon SCT
Trans MOSFET N-CH Si 100V 97A 3-Pin(3 Tab) TO-247AC Tube
Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:97A; Drain Source Voltage Vds:100V; On Resistance Rds(on):7.2mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:230W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:97A; Package / Case:TO-247AC; Power Dissipation Pd:230W; Pulse Current Idm:390A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to IRFP4410ZPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeSubcategoryTechnologyNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageDual Supply VoltageAvalanche Energy Rating (Eas)Recovery TimeNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountJESD-609 CodePbfree CodeTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinSupplier Device PackageWeightMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCCurrent RatingNumber of ChannelsInput CapacitanceDrain to Source ResistanceRds On MaxView Compare
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IRFP4410ZPBF10 WeeksThrough HoleThrough HoleTO-247-33SILICON-55°C~175°C TJBulkHEXFET®2004Obsolete1 (Unlimited)3Through HoleEAR99FET General Purpose PowerMOSFET (Metal Oxide)1230W TcSingleENHANCEMENT MODE230WDRAIN16 nsN-ChannelSWITCHING9m Ω @ 58A, 10V4V @ 150μA4820pF @ 50V97A Tc120nC @ 10V52ns10V±20V57 ns43 ns97A4VTO-247AC20V0.009Ohm100V100V242 mJ57 ns4 V20.7mm15.87mm5.3086mmNo SVHCNoROHS3 CompliantLead Free-------------------------- -
--Through HoleTO-247-3-SILICON-55°C~175°C TJTube--Obsolete1 (Unlimited)3---MOSFET (Metal Oxide)1230W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING55m Ω @ 25A, 10V4V @ 250μA2.8pF @ 25V41A Tc140nC @ 10V-10V±20V------0.055Ohm----------Non-RoHS Compliant-NOe0noTIN LEADSINGLENOT SPECIFIEDunknownNOT SPECIFIEDR-PSFM-T3COMMERCIALSINGLE WITH BUILT-IN DIODE100V40A160A100V----------
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--Through HoleTO-3P-3, SC-65-3---55°C~150°C TJTube-2001Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-205W Tc-----N-Channel-390mOhm @ 7A, 10V4V @ 250μA3800pF @ 25V14A Tc113nC @ 10V-10V±30V------------------------------500V---TO-3P---------
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-Through HoleThrough HoleTO-247-33--55°C~150°C TJTube-1997Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-150W TcSingle-150W-8.7 nsN-Channel-630mOhm @ 5.7A, 10V4V @ 250μA1400pF @ 25V9.5A Tc80nC @ 10V28ns10V±20V27 ns58 ns9.5A4V-20V-450V----20.7mm15.87mm5.31mmUnknown-ROHS3 CompliantLead Free-----------450V---TO-247-338.000013g150°C-55°C450V9.5A11.4nF630mOhm630 mΩ
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