Infineon Technologies IRFP4368PBF

Name: IRFP4368PBF
Brand: Infineon Technologies
SKU: 2479093-IRFP4368PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFP4368PBF

Manufacturer:: Infineon Technologies

Ventron No:: 2479093-IRFP4368PBF

Description:: MOSFET N-CH 75V 195A TO-247AC

ECAD Model:

Datasheet:: IRFP4368PBF

Specifications

Infineon Technologies IRFP4368PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFP4368PBF.

Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2008
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Resistance
1.85MOhm
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Power Dissipation-Max
520W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
520W
Case Connection
DRAIN
Turn On Delay Time
43 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.85m Ω @ 195A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
19230pF @ 50V
Current - Continuous Drain (Id) @ 25°C
195A Tc
Gate Charge (Qg) (Max) @ Vgs
570nC @ 10V
Rise Time
220ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
260 ns
Turn-Off Delay Time
170 ns
Continuous Drain Current (ID)
350A
Threshold Voltage
4V
JEDEC-95 Code
TO-247AC
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
75V
Dual Supply Voltage
75V
Recovery Time
200 ns
Nominal Vgs
4 V
Height
20.7mm
Length
15.87mm
Width
5.3086mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRFP4368PBF Overview
The maximum input capacitance of this device is 19230pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 350A.When VGS=75V, and ID flows to VDS at 75VVDS, the drain-source breakdown voltage is 75V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 170 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 43 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.

IRFP4368PBF Features
a continuous drain current (ID) of 350A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 170 ns
a threshold voltage of 4V

IRFP4368PBF Applications
There are a lot of Infineon Technologies
IRFP4368PBF applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

IRFP4368PBF More Descriptions

IRFP4368PBF N-channel MOSFET Transistor, 350 A, 75 V, 3-Pin TO-247AC
Single N-Channel 75 V 1.85 mOhm 570 nC HEXFET® Power Mosfet - TO-247AC
75V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHSInfineon SCT
Power Field-Effect Transistor, 195A I(D), 75V, 0.00185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, 75V 350A TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:350A; Drain Source Voltage Vds:75V; On Resistance Rds(on):1.46mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:520W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:350A; Package / Case:TO-247AC; Power Dissipation Pd:520W; Pulse Current Idm:1280A; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to IRFP4368PBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Subcategory

Technology

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Recovery Time

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Weight

JESD-609 Code

Pbfree Code

Terminal Finish

Voltage - Rated DC

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Number of Channels

Surface Mount

Terminal Position

Reach Compliance Code

JESD-30 Code

Configuration

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Input Capacitance

Drain to Source Resistance

Rds On Max

View Compare
IRFP4368PBF

Infineon Technologies

12 Weeks

Through Hole

Through Hole

TO-247-3

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2008

Active

1 (Unlimited)

3

Through Hole

EAR99

1.85MOhm

FET General Purpose Power

MOSFET (Metal Oxide)

1

520W Tc

Single

ENHANCEMENT MODE

520W

DRAIN

43 ns

N-Channel

SWITCHING

1.85m Ω @ 195A, 10V

4V @ 250μA

19230pF @ 50V

195A Tc

570nC @ 10V

220ns

10V

±20V

260 ns

170 ns

350A

4V

TO-247AC

20V

75V

75V

200 ns

4 V

20.7mm

15.87mm

5.3086mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFP054

Vishay Siliconix

-

Through Hole

Through Hole

TO-247-3

3

SILICON

-55°C~175°C TJ

Tube

-

2016

Obsolete

1 (Unlimited)

3

-

EAR99

-

-

MOSFET (Metal Oxide)

1

230W Tc

Single

ENHANCEMENT MODE

230W

DRAIN

20 ns

N-Channel

SWITCHING

14m Ω @ 54A, 10V

4V @ 250μA

4500pF @ 25V

70A Tc

160nC @ 10V

160ns

10V

±20V

150 ns

83 ns

70A

-

-

20V

60V

-

-

-

20.7mm

15.87mm

5.31mm

-

-

Non-RoHS Compliant

Contains Lead

38.000013g

e0

no

TIN LEAD

60V

NOT SPECIFIED

70A

NOT SPECIFIED

3

Not Qualified

1

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRFP4368PBF vs IRFP054
IRFP150

Vishay Siliconix

-

-

Through Hole

TO-247-3

-

SILICON

-55°C~175°C TJ

Tube

-

-

Obsolete

1 (Unlimited)

3

-

-

-

-

MOSFET (Metal Oxide)

1

230W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

55m Ω @ 25A, 10V

4V @ 250μA

2.8pF @ 25V

41A Tc

140nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

e0

no

TIN LEAD

-

NOT SPECIFIED

-

NOT SPECIFIED

-

COMMERCIAL

-

NO

SINGLE

unknown

R-PSFM-T3

SINGLE WITH BUILT-IN DIODE

100V

40A

0.055Ohm

160A

100V

-

-

-

-

-

-

IRFP4368PBF vs IRFP150
IRFP32N50K

Vishay Siliconix

-

Through Hole

Through Hole

TO-247-3

-

-

-55°C~150°C TJ

Tube

-

2014

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

460W Tc

Single

-

-

-

28 ns

N-Channel

-

160mOhm @ 32A, 10V

5V @ 250μA

5280pF @ 25V

32A Tc

190nC @ 10V

120ns

10V

±30V

54 ns

48 ns

32A

-

-

30V

500V

-

-

-

20.7mm

15.87mm

5.31mm

-

No

Non-RoHS Compliant

Contains Lead

38.000013g

-

-

-

500V

-

32A

-

-

-

1

-

-

-

-

-

500V

-

-

-

-

TO-247-3

150°C

-55°C

5.28nF

160mOhm

160 mΩ

IRFP4368PBF vs IRFP32N50K

Certification

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IRFP4368PBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRFP4368PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 75V 350A 3-Pin(3 Tab) TO-247A RoHS: Compliant	195	1 $5.454 10 $5.039 25 $4.849 100 $4.259 250 $3.475
IRFP4368PBF DISTI #	Infineon Technologies AG	MOSFET N-CH 75V 195A TO-247AC RoHS: Compliant	3983	1 $7.56 25 $6.1952 100 $5.591 500 $4.68432 1000 $4.07989
IRFP4368PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 75V 350A 3-Pin(3 Tab) TO-247A RoHS: Compliant	445	4 $8.1125
IRFP4368PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 75V 350A 3-Pin(3 Tab) TO-247A RoHS: Compliant	195	3 $5.454 10 $5.039 25 $4.849 100 $4.259
IRFP4368PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 75V 350A 3-Pin(3 Tab) TO-247AC - RoHS: Compliant	301	1 $4.69 10 $4.29 25 $4.19 50 $4.19 100 $3.39 500 $3.19 1000 $3.19
IRFP4368PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 75V 350A 3-Pin(3 Tab) TO-247AC ( RoHS: Compliant	100	1 $6.01 5 $5.43 10 $4.61 50 $4.31 100 $4.01 250 $3.76
IRFP4368PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 75V 350A 3-Pin(3 Tab) TO-247AC ( RoHS: Compliant	0	400 $4.30956 800 $4.13245 1200 $4.07661 2000 $3.91778 4000 $3.86755 10000 $3.77086 20000 $3.67889
IRFP4368PBF DISTI #	Infineon Technologies AG	N CHANNEL MOSFET, 75V, 350A, TO-247AC, Transistor	85	1 $6.54 10 $5.91 25 $5.64 50 $5.27 100 $4.9 250 $4.68
IRFP4368PBF DISTI #	Infineon Technologies AG	MOSFET, N Ch., 75V, 350A, 1.85 MOHM, 380 NC Q RoHS: Compliant	28	1 $12.074 10 $10.645 100 $9.286 500 $8.053 1000 $7.097
IRFP4368PBF DISTI #	Infineon Technologies AG	MOSFET MOSFT 75V 350A 1.85mOhm 380nC Qg RoHS: Compliant	1087	1 $6.54 10 $5.91 25 $5.64 100 $4.9 250 $4.68
IRFP4368PBF DISTI #	International Rectifier	RoHS: Not Compliant	113	1 $4.05 25 $3.76 100 $3.61 500 $3.46 1000 $3.29
IRFP4368PBF DISTI #	Infineon Technologies AG	Single N-Channel 75 V 1.85 mOhm 570 nC HEXFET Powe RoHS: Compliant	1702	5 $4.35 40 $3.83 150 $3.44
IRFP4368PBF DISTI #	International Rectifier		15	1 $12.24 3 $8.976 9 $8.16
IRFP4368PBF DISTI #	Infineon Technologies AG		25	1 $13.2075 7 $11.74 22 $10.8595
IRFP4368PBF DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL 75V 350A HEXFET TO247AC, TU	429	13 $5.22
IRFP4368PBF DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL 75V 350A HEXFET TO247AC, EA	40	1 $5.78 13 $5.22
IRFP4368PBF DISTI #	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 75V, 350A, 520	371	1 $8.29 3 $7.47 10 $6 100 $5.25
IRFP4368PBF DISTI #	Infineon Technologies AG	N-Ch 75V 195A 520W 0,00185R TO247AC RoHS: Compliant	240	5 $4.06 25 $3.46 100 $3.26 200 $3.13
IRFP4368PBF DISTI #	Infineon Technologies AG	N-CH 75V 350A 1,8mOhm TO247 RoHS: Compliant	350	25 $5.27 50 $4.98 125 $4.68 225 $4.22 400 $4.07
IRFP4368PBF DISTI #	Infineon Technologies AG	75V,1.85m,350A,N-Channel Power MOSFET	125	1 $5.77 100 $4.81 500 $4.25 1000 $4.12
IRFP4368PBF DISTI #	INFINEON/IR	TO-247AC RoHS: Compliant	2988	250 $3 2988 $2.8
IRFP4368PBF DISTI #	Infineon Technologies AG	PowerField-EffectTransistor,195AI(D),75V,0.00185oh RoHS: Compliant	590	25 $5.8 590 $5.44
IRFP4368PBF DISTI #	International Rectifier	RoHS (ship within 1day)	19	1 $11.28 10 $7.38 50 $5.64 100 $4.56 500 $4.21 1000 $4.08
IRFP4368PBF DISTI #	Infineon Technologies AG	RoHS (ship within 1day)	32	1 $8.86 10 $7.55 50 $6.54 100 $6.25 500 $5.99 1000 $5.87
IRFP4368PBF DISTI #	International Rectifier	RoHS: Compliant	96
IRFP4368PBF DISTI #	Infineon Technologies AG	INSTOCK	161
IRFP4368PBF DISTI #	Infineon Technologies AG	INSTOCK	444
IRFP4368PBF DISTI #	Infineon Technologies AG	MOSFETs RoHS: Compliant	445	1 $6.49 10 $4.17 50 $3.7 100 $3.6 200 $3.57
IRFP4368PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 75V 350A 3-Pin(3 Tab) TO-247A RoHS: Compliant	678	1 $8.07 10 $4.74 50 $4.05 100 $3.72 250 $3.69 500 $3.52
IRFP4368PBF DISTI #	Infineon Technologies AG	MOSFETs RoHS: Compliant	195	1 $5.454 10 $5.039 25 $4.849 100 $4.259
IRFP4368PBF DISTI #	Infineon Technologies AG	MOSFET, 75V 350A TO-247AC RoHS: Compliant	1082	1 $10.36 10 $9.36 25 $8.93 100 $7.75 250 $7.41
IRFP4368PBF DISTI #	Infineon Technologies AG	MOSFET, 75V 350A TO-247AC RoHS: Compliant	659	1 $5.56 5 $5.05 10 $4.35 50 $4.07 100 $3.78

IRFP436~~(3)~~
IRFP43~~(12)~~
IRFP4~~(66)~~
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Infineon Technologies IRFP4368PBF

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