Infineon Technologies IRFP4110PBF
- Part Number:
- IRFP4110PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2479029-IRFP4110PBF
- Description:
- MOSFET N-CH 100V 120A TO-247AC
- ECAD Model:
-
- Datasheet:
- IRFP4110PBF
Infineon Technologies IRFP4110PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFP4110PBF.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2008
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationThrough Hole
- ECCN CodeEAR99
- Resistance4.5MOhm
- Terminal FinishMATTE TIN OVER NICKEL
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)250
- Time@Peak Reflow Temperature-Max (s)30
- Number of Elements1
- Power Dissipation-Max370W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation370W
- Case ConnectionDRAIN
- Turn On Delay Time25 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs4.5m Ω @ 75A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds9620pF @ 50V
- Current - Continuous Drain (Id) @ 25°C120A Tc
- Gate Charge (Qg) (Max) @ Vgs210nC @ 10V
- Rise Time67ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)88 ns
- Turn-Off Delay Time78 ns
- Continuous Drain Current (ID)180A
- Threshold Voltage4V
- JEDEC-95 CodeTO-247AC
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage100V
- Pulsed Drain Current-Max (IDM)670A
- Dual Supply Voltage100V
- Recovery Time75 ns
- Nominal Vgs4 V
- Height20.7mm
- Length15.87mm
- Width5.3086mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFP4110PBF Description
IRFP4110PBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 100V. The operating temperature of the IRFP4110PBF is -55°C~175°C TJ and its maximum power dissipation is 370W Tc. IRFP4110PBF has 3 pins and it is available in Tube packaging way. The Drain to Source Breakdown Voltage of IRFP4110PBF is 100V.
IRFP4110PBF Features
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
IRFP4110PBF Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
IRFP4110PBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 100V. The operating temperature of the IRFP4110PBF is -55°C~175°C TJ and its maximum power dissipation is 370W Tc. IRFP4110PBF has 3 pins and it is available in Tube packaging way. The Drain to Source Breakdown Voltage of IRFP4110PBF is 100V.
IRFP4110PBF Features
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
IRFP4110PBF Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
IRFP4110PBF More Descriptions
IRFP4110PBF N-channel MOSFET Transistor, 180 A, 100 V, 3-Pin TO-247AC
Single N-Channel 100 V 4.5 mOhm 210 nC HEXFET® Power Mosfet - TO-247AC
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHSInfineon SCT
Power Field-Effect Transistor, 180A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):3.7mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:370W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:180A; Package / Case:TO-247AC; Power Dissipation Pd:370W; Pulse Current Idm:670A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Single N-Channel 100 V 4.5 mOhm 210 nC HEXFET® Power Mosfet - TO-247AC
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHSInfineon SCT
Power Field-Effect Transistor, 180A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):3.7mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:370W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:180A; Package / Case:TO-247AC; Power Dissipation Pd:370W; Pulse Current Idm:670A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to IRFP4110PBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceTerminal FinishSubcategoryTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageRecovery TimeNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeVgs(th) (Max) @ Id:Technology:Supplier Device Package:Series:Rds On (Max) @ Id, Vgs:Power Dissipation (Max):Packaging:Package / Case:Operating Temperature:Mounting Type:Input Capacitance (Ciss) (Max) @ Vds:Gate Charge (Qg) (Max) @ Vgs:FET Type:FET Feature:Drain to Source Voltage (Vdss):Current - Continuous Drain (Id) @ 25°C:Supplier Device PackageWeightMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCCurrent RatingNumber of ChannelsDrain to Source Voltage (Vdss)Input CapacitanceDrain to Source ResistanceRds On MaxView Compare
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IRFP4110PBF12 WeeksThrough HoleThrough HoleTO-247-33SILICON-55°C~175°C TJTubeHEXFET®2008e3Active1 (Unlimited)3Through HoleEAR994.5MOhmMATTE TIN OVER NICKELFET General Purpose PowerMOSFET (Metal Oxide)250301370W TcSingleENHANCEMENT MODE370WDRAIN25 nsN-ChannelSWITCHING4.5m Ω @ 75A, 10V4V @ 250μA9620pF @ 50V120A Tc210nC @ 10V67ns10V±20V88 ns78 ns180A4VTO-247AC20V100V670A100V75 ns4 V20.7mm15.87mm5.3086mmNo SVHCNoROHS3 CompliantLead Free---------------------------- -
---------------------------------------------------------4V @ 250µAMOSFET (Metal Oxide)TO-247-3-400 mOhm @ 8.4A, 10V190W (Tc)TubeTO-247-3-55°C ~ 150°C (TJ)Through Hole2600pF @ 25V150nC @ 10VN-Channel-500V14A (Tc)-----------
-
-Through HoleThrough HoleTO-247-3---55°C~150°C TJTube-2014-Obsolete1 (Unlimited)------MOSFET (Metal Oxide)---460W TcSingle---28 nsN-Channel-160mOhm @ 32A, 10V5V @ 250μA5280pF @ 25V32A Tc190nC @ 10V120ns10V±30V54 ns48 ns32A--30V500V----20.7mm15.87mm5.31mm-NoNon-RoHS CompliantContains Lead----------------TO-247-338.000013g150°C-55°C500V32A1500V5.28nF160mOhm160 mΩ
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-Through HoleThrough HoleTO-247-33--55°C~150°C TJTube-2015-Obsolete1 (Unlimited)------MOSFET (Metal Oxide)---190W TcSingle-190W-16 nsN-Channel-300mOhm @ 9.6A, 10V4V @ 250μA2600pF @ 25V16A Tc150nC @ 10V49ns10V±20V47 ns87 ns16A--20V400V----20.7mm15.87mm5.31mm--Non-RoHS CompliantContains Lead----------------TO-247-338.000013g150°C-55°C400V16A1400V2.6nF300mOhm300 mΩ
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