IRFP4004PBF

Infineon Technologies IRFP4004PBF

Part Number:
IRFP4004PBF
Manufacturer:
Infineon Technologies
Ventron No:
2479474-IRFP4004PBF
Description:
MOSFET N-CH 40V 195A TO-247AC
ECAD Model:
Datasheet:
IRFP4004PBF

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Specifications
Infineon Technologies IRFP4004PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFP4004PBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2003
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    1.7MOhm
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Power Dissipation-Max
    380W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    380W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    59 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    1.7m Ω @ 195A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    8920pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    195A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    330nC @ 10V
  • Rise Time
    370ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    190 ns
  • Turn-Off Delay Time
    160 ns
  • Continuous Drain Current (ID)
    350A
  • Threshold Voltage
    4V
  • JEDEC-95 Code
    TO-247AC
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    40V
  • Avalanche Energy Rating (Eas)
    290 mJ
  • Recovery Time
    130 ns
  • Height
    20.7mm
  • Length
    15.87mm
  • Width
    5.3086mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFP4004PBF Description The IRFP4004PBF MOSFET is designed for high current capability and low RDS(on). Low-frequency applications requiring performance and toughness are perfect for IRFP4004PBF MOSFETs. A wide range of applications, such as DC motors, battery management systems, inverters, and DC-DC converters, are covered by the extensive portfolio.
IRFP4004PBF Features Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry-standard through-hole power package
High-current rating
Improved Gate, Avalanche, and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
IRFP4004PBF Applications High-Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High-Speed Power Switching
Hard Switched and High-Frequency Circuits
IRFP4004PBF More Descriptions
IRFP4004PBF N-channel MOSFET Transistor, 350 A, 40 V, 3-Pin TO-247AC
MOSFET Operating temperature: -55... 175 °C Housing type: TO-247 Power dissipation: 380 W
Single N-Channel 40 V 1.7 mOhm 220 nC HEXFET® Power Mosfet - TO-247-3AC
40V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHSInfineon SCT
Power Field-Effect Transistor, 195A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
MOSFET, 40V 350A TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:350A; Drain Source Voltage Vds:40V; On Resistance Rds(on):1.35mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:380W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:350A; Package / Case:TO-247AC; Power Dissipation Pd:380W; Pulse Current Idm:1390A; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:40V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to IRFP4004PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Technology
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    Recovery Time
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    Weight
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Current Rating
    Number of Channels
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    View Compare
  • IRFP4004PBF
    IRFP4004PBF
    12 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2003
    Active
    1 (Unlimited)
    3
    EAR99
    1.7MOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    1
    380W Tc
    Single
    ENHANCEMENT MODE
    380W
    DRAIN
    59 ns
    N-Channel
    SWITCHING
    1.7m Ω @ 195A, 10V
    4V @ 250μA
    8920pF @ 25V
    195A Tc
    330nC @ 10V
    370ns
    10V
    ±20V
    190 ns
    160 ns
    350A
    4V
    TO-247AC
    20V
    40V
    290 mJ
    130 ns
    20.7mm
    15.87mm
    5.3086mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFP450B
    -
    -
    Through Hole
    TO-3P-3, SC-65-3
    -
    -
    -55°C~150°C TJ
    Tube
    -
    2001
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    205W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    390mOhm @ 7A, 10V
    4V @ 250μA
    3800pF @ 25V
    14A Tc
    113nC @ 10V
    -
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    TO-3P
    500V
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFP344PBF
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    -55°C~150°C TJ
    Tube
    -
    1997
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    150W Tc
    Single
    -
    150W
    -
    8.7 ns
    N-Channel
    -
    630mOhm @ 5.7A, 10V
    4V @ 250μA
    1400pF @ 25V
    9.5A Tc
    80nC @ 10V
    28ns
    10V
    ±20V
    27 ns
    58 ns
    9.5A
    4V
    -
    20V
    450V
    -
    -
    20.7mm
    15.87mm
    5.31mm
    Unknown
    -
    ROHS3 Compliant
    Lead Free
    TO-247-3
    450V
    38.000013g
    150°C
    -55°C
    450V
    9.5A
    1
    1.4nF
    630mOhm
    630 mΩ
  • IRFP32N50K
    -
    Through Hole
    Through Hole
    TO-247-3
    -
    -
    -55°C~150°C TJ
    Tube
    -
    2014
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    460W Tc
    Single
    -
    -
    -
    28 ns
    N-Channel
    -
    160mOhm @ 32A, 10V
    5V @ 250μA
    5280pF @ 25V
    32A Tc
    190nC @ 10V
    120ns
    10V
    ±30V
    54 ns
    48 ns
    32A
    -
    -
    30V
    500V
    -
    -
    20.7mm
    15.87mm
    5.31mm
    -
    No
    Non-RoHS Compliant
    Contains Lead
    TO-247-3
    500V
    38.000013g
    150°C
    -55°C
    500V
    32A
    1
    5.28nF
    160mOhm
    160 mΩ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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