Infineon Technologies IRFP4004PBF
- Part Number:
- IRFP4004PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2479474-IRFP4004PBF
- Description:
- MOSFET N-CH 40V 195A TO-247AC
- Datasheet:
- IRFP4004PBF
Infineon Technologies IRFP4004PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFP4004PBF.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2003
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance1.7MOhm
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Power Dissipation-Max380W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation380W
- Case ConnectionDRAIN
- Turn On Delay Time59 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.7m Ω @ 195A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds8920pF @ 25V
- Current - Continuous Drain (Id) @ 25°C195A Tc
- Gate Charge (Qg) (Max) @ Vgs330nC @ 10V
- Rise Time370ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)190 ns
- Turn-Off Delay Time160 ns
- Continuous Drain Current (ID)350A
- Threshold Voltage4V
- JEDEC-95 CodeTO-247AC
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage40V
- Avalanche Energy Rating (Eas)290 mJ
- Recovery Time130 ns
- Height20.7mm
- Length15.87mm
- Width5.3086mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFP4004PBF Description
The IRFP4004PBF MOSFET is designed for high current capability and low RDS(on). Low-frequency applications requiring performance and toughness are perfect for IRFP4004PBF MOSFETs. A wide range of applications, such as DC motors, battery management systems, inverters, and DC-DC converters, are covered by the extensive portfolio.
IRFP4004PBF Features Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry-standard through-hole power package
High-current rating
Improved Gate, Avalanche, and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
IRFP4004PBF Applications High-Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High-Speed Power Switching
Hard Switched and High-Frequency Circuits
IRFP4004PBF Features Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry-standard through-hole power package
High-current rating
Improved Gate, Avalanche, and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
IRFP4004PBF Applications High-Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High-Speed Power Switching
Hard Switched and High-Frequency Circuits
IRFP4004PBF More Descriptions
IRFP4004PBF N-channel MOSFET Transistor, 350 A, 40 V, 3-Pin TO-247AC
MOSFET Operating temperature: -55... 175 °C Housing type: TO-247 Power dissipation: 380 W
Single N-Channel 40 V 1.7 mOhm 220 nC HEXFET® Power Mosfet - TO-247-3AC
40V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHSInfineon SCT
Power Field-Effect Transistor, 195A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
MOSFET, 40V 350A TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:350A; Drain Source Voltage Vds:40V; On Resistance Rds(on):1.35mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:380W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:350A; Package / Case:TO-247AC; Power Dissipation Pd:380W; Pulse Current Idm:1390A; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:40V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
MOSFET Operating temperature: -55... 175 °C Housing type: TO-247 Power dissipation: 380 W
Single N-Channel 40 V 1.7 mOhm 220 nC HEXFET® Power Mosfet - TO-247-3AC
40V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHSInfineon SCT
Power Field-Effect Transistor, 195A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
MOSFET, 40V 350A TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:350A; Drain Source Voltage Vds:40V; On Resistance Rds(on):1.35mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:380W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:350A; Package / Case:TO-247AC; Power Dissipation Pd:380W; Pulse Current Idm:1390A; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:40V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to IRFP4004PBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryTechnologyNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageAvalanche Energy Rating (Eas)Recovery TimeHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageDrain to Source Voltage (Vdss)WeightMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCCurrent RatingNumber of ChannelsInput CapacitanceDrain to Source ResistanceRds On MaxView Compare
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IRFP4004PBF12 WeeksThrough HoleThrough HoleTO-247-33SILICON-55°C~175°C TJTubeHEXFET®2003Active1 (Unlimited)3EAR991.7MOhmFET General Purpose PowerMOSFET (Metal Oxide)1380W TcSingleENHANCEMENT MODE380WDRAIN59 nsN-ChannelSWITCHING1.7m Ω @ 195A, 10V4V @ 250μA8920pF @ 25V195A Tc330nC @ 10V370ns10V±20V190 ns160 ns350A4VTO-247AC20V40V290 mJ130 ns20.7mm15.87mm5.3086mmNo SVHCNoROHS3 CompliantLead Free------------
-
--Through HoleTO-3P-3, SC-65-3---55°C~150°C TJTube-2001Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-205W Tc-----N-Channel-390mOhm @ 7A, 10V4V @ 250μA3800pF @ 25V14A Tc113nC @ 10V-10V±30V----------------TO-3P500V---------
-
-Through HoleThrough HoleTO-247-33--55°C~150°C TJTube-1997Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-150W TcSingle-150W-8.7 nsN-Channel-630mOhm @ 5.7A, 10V4V @ 250μA1400pF @ 25V9.5A Tc80nC @ 10V28ns10V±20V27 ns58 ns9.5A4V-20V450V--20.7mm15.87mm5.31mmUnknown-ROHS3 CompliantLead FreeTO-247-3450V38.000013g150°C-55°C450V9.5A11.4nF630mOhm630 mΩ
-
-Through HoleThrough HoleTO-247-3---55°C~150°C TJTube-2014Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-460W TcSingle---28 nsN-Channel-160mOhm @ 32A, 10V5V @ 250μA5280pF @ 25V32A Tc190nC @ 10V120ns10V±30V54 ns48 ns32A--30V500V--20.7mm15.87mm5.31mm-NoNon-RoHS CompliantContains LeadTO-247-3500V38.000013g150°C-55°C500V32A15.28nF160mOhm160 mΩ
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