IRFP360PBF

Vishay Siliconix IRFP360PBF

Part Number:
IRFP360PBF
Manufacturer:
Vishay Siliconix
Ventron No:
2848733-IRFP360PBF
Description:
MOSFET N-CH 400V 23A TO-247AC
ECAD Model:
Datasheet:
IRFP360PBF

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Specifications
Vishay Siliconix IRFP360PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFP360PBF.
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-247-3
  • Weight
    38.000013g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2009
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    200mOhm
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    400V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    23A
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    280W Tc
  • Element Configuration
    Single
  • Power Dissipation
    280W
  • Turn On Delay Time
    18 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    200mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4500pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    23A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    210nC @ 10V
  • Rise Time
    79ns
  • Drain to Source Voltage (Vdss)
    400V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    67 ns
  • Turn-Off Delay Time
    100 ns
  • Continuous Drain Current (ID)
    23A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    400V
  • Input Capacitance
    4.5nF
  • Recovery Time
    630 ns
  • Drain to Source Resistance
    200mOhm
  • Rds On Max
    200 mΩ
  • Nominal Vgs
    4 V
  • Height
    20.7mm
  • Length
    15.87mm
  • Width
    5.31mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFP360PBF Overview
A device's maximum input capacitance is 4500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 23A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=400V, and this device has a drain-to-source breakdown voltage of 400V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 100 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 200mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.To operate this transistor, you need to apply a 400V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IRFP360PBF Features
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 100 ns
single MOSFETs transistor is 200mOhm
a threshold voltage of 4V
a 400V drain to source voltage (Vdss)


IRFP360PBF Applications
There are a lot of Vishay Siliconix
IRFP360PBF applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRFP360PBF More Descriptions
Single N-Channel 400 V 0.2 Ohms Flange Mount Power Mosfet - TO-247AC
Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N, 400V, 23A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:400V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:23A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.45°C/W; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:250W; Power Dissipation Pd:250W; Pulse Current Idm:92A; Termination Type:Through Hole; Voltage Vds Typ:400V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to IRFP360PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Recovery Time
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    View Compare
  • IRFP360PBF
    IRFP360PBF
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    2009
    Active
    1 (Unlimited)
    200mOhm
    150°C
    -55°C
    400V
    MOSFET (Metal Oxide)
    23A
    1
    1
    280W Tc
    Single
    280W
    18 ns
    N-Channel
    200mOhm @ 14A, 10V
    4V @ 250μA
    4500pF @ 25V
    23A Tc
    210nC @ 10V
    79ns
    400V
    10V
    ±20V
    67 ns
    100 ns
    23A
    4V
    20V
    400V
    4.5nF
    630 ns
    200mOhm
    200 mΩ
    4 V
    20.7mm
    15.87mm
    5.31mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
  • IRFP450B
    -
    -
    Through Hole
    TO-3P-3, SC-65-3
    -
    TO-3P
    -
    -55°C~150°C TJ
    Tube
    2001
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    205W Tc
    -
    -
    -
    N-Channel
    390mOhm @ 7A, 10V
    4V @ 250μA
    3800pF @ 25V
    14A Tc
    113nC @ 10V
    -
    500V
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFP32N50K
    -
    Through Hole
    Through Hole
    TO-247-3
    -
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    2014
    Obsolete
    1 (Unlimited)
    -
    150°C
    -55°C
    500V
    MOSFET (Metal Oxide)
    32A
    -
    1
    460W Tc
    Single
    -
    28 ns
    N-Channel
    160mOhm @ 32A, 10V
    5V @ 250μA
    5280pF @ 25V
    32A Tc
    190nC @ 10V
    120ns
    500V
    10V
    ±30V
    54 ns
    48 ns
    32A
    -
    30V
    500V
    5.28nF
    -
    160mOhm
    160 mΩ
    -
    20.7mm
    15.87mm
    5.31mm
    -
    No
    Non-RoHS Compliant
    Contains Lead
  • IRFP350
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    2015
    Obsolete
    1 (Unlimited)
    -
    150°C
    -55°C
    400V
    MOSFET (Metal Oxide)
    16A
    -
    1
    190W Tc
    Single
    190W
    16 ns
    N-Channel
    300mOhm @ 9.6A, 10V
    4V @ 250μA
    2600pF @ 25V
    16A Tc
    150nC @ 10V
    49ns
    400V
    10V
    ±20V
    47 ns
    87 ns
    16A
    -
    20V
    400V
    2.6nF
    -
    300mOhm
    300 mΩ
    -
    20.7mm
    15.87mm
    5.31mm
    -
    -
    Non-RoHS Compliant
    Contains Lead
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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