Vishay Siliconix IRFP360PBF
- Part Number:
- IRFP360PBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2848733-IRFP360PBF
- Description:
- MOSFET N-CH 400V 23A TO-247AC
- Datasheet:
- IRFP360PBF
Vishay Siliconix IRFP360PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFP360PBF.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Supplier Device PackageTO-247-3
- Weight38.000013g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2009
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance200mOhm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC400V
- TechnologyMOSFET (Metal Oxide)
- Current Rating23A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max280W Tc
- Element ConfigurationSingle
- Power Dissipation280W
- Turn On Delay Time18 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs200mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4500pF @ 25V
- Current - Continuous Drain (Id) @ 25°C23A Tc
- Gate Charge (Qg) (Max) @ Vgs210nC @ 10V
- Rise Time79ns
- Drain to Source Voltage (Vdss)400V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)67 ns
- Turn-Off Delay Time100 ns
- Continuous Drain Current (ID)23A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage400V
- Input Capacitance4.5nF
- Recovery Time630 ns
- Drain to Source Resistance200mOhm
- Rds On Max200 mΩ
- Nominal Vgs4 V
- Height20.7mm
- Length15.87mm
- Width5.31mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFP360PBF Overview
A device's maximum input capacitance is 4500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 23A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=400V, and this device has a drain-to-source breakdown voltage of 400V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 100 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 200mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.To operate this transistor, you need to apply a 400V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFP360PBF Features
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 100 ns
single MOSFETs transistor is 200mOhm
a threshold voltage of 4V
a 400V drain to source voltage (Vdss)
IRFP360PBF Applications
There are a lot of Vishay Siliconix
IRFP360PBF applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 4500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 23A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=400V, and this device has a drain-to-source breakdown voltage of 400V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 100 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 200mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.To operate this transistor, you need to apply a 400V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFP360PBF Features
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 100 ns
single MOSFETs transistor is 200mOhm
a threshold voltage of 4V
a 400V drain to source voltage (Vdss)
IRFP360PBF Applications
There are a lot of Vishay Siliconix
IRFP360PBF applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRFP360PBF More Descriptions
Single N-Channel 400 V 0.2 Ohms Flange Mount Power Mosfet - TO-247AC
Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N, 400V, 23A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:400V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:23A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.45°C/W; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:250W; Power Dissipation Pd:250W; Pulse Current Idm:92A; Termination Type:Through Hole; Voltage Vds Typ:400V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N, 400V, 23A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:400V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:23A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.45°C/W; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:250W; Power Dissipation Pd:250W; Pulse Current Idm:92A; Termination Type:Through Hole; Voltage Vds Typ:400V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to IRFP360PBF.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceRecovery TimeDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeView Compare
-
IRFP360PBF8 WeeksThrough HoleThrough HoleTO-247-33TO-247-338.000013g-55°C~150°C TJTube2009Active1 (Unlimited)200mOhm150°C-55°C400VMOSFET (Metal Oxide)23A11280W TcSingle280W18 nsN-Channel200mOhm @ 14A, 10V4V @ 250μA4500pF @ 25V23A Tc210nC @ 10V79ns400V10V±20V67 ns100 ns23A4V20V400V4.5nF630 ns200mOhm200 mΩ4 V20.7mm15.87mm5.31mmUnknownNoROHS3 CompliantLead Free-
-
--Through HoleTO-3P-3, SC-65-3-TO-3P--55°C~150°C TJTube2001Obsolete1 (Unlimited)----MOSFET (Metal Oxide)---205W Tc---N-Channel390mOhm @ 7A, 10V4V @ 250μA3800pF @ 25V14A Tc113nC @ 10V-500V10V±30V------------------
-
-Through HoleThrough HoleTO-247-3-TO-247-338.000013g-55°C~150°C TJTube2014Obsolete1 (Unlimited)-150°C-55°C500VMOSFET (Metal Oxide)32A-1460W TcSingle-28 nsN-Channel160mOhm @ 32A, 10V5V @ 250μA5280pF @ 25V32A Tc190nC @ 10V120ns500V10V±30V54 ns48 ns32A-30V500V5.28nF-160mOhm160 mΩ-20.7mm15.87mm5.31mm-NoNon-RoHS CompliantContains Lead
-
-Through HoleThrough HoleTO-247-33TO-247-338.000013g-55°C~150°C TJTube2015Obsolete1 (Unlimited)-150°C-55°C400VMOSFET (Metal Oxide)16A-1190W TcSingle190W16 nsN-Channel300mOhm @ 9.6A, 10V4V @ 250μA2600pF @ 25V16A Tc150nC @ 10V49ns400V10V±20V47 ns87 ns16A-20V400V2.6nF-300mOhm300 mΩ-20.7mm15.87mm5.31mm--Non-RoHS CompliantContains Lead
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
05 March 2024
STM8S207CBT6 Microcontroller Functions, Specifications, Operating Principle and Package
Ⅰ. STM8S207CBT6 overviewⅡ. Functions of STM8S207CBT6Ⅲ. STM8S207CBT6 specificationsⅣ. STM8S207CBT6 structure and operating principleⅤ. Package and dimensions of STM8S207CBT6Ⅵ. Four low-power modes of STM8S207CBT6 microcontrollerⅦ. Application areas of STM8S207CBT6Ⅰ.... -
06 March 2024
ATMEGA2560-16AU: A Versatile Embedded Microcontroller
Ⅰ. ATMEGA2560-16AU overviewⅡ. Architecture of ATMEGA2560-16AUⅢ. ATMEGA2560-16AU block diagramⅣ. ATMEGA2560-16AU specificationsⅤ. Features of ATMEGA2560-16AUⅥ. Absolute maximum ratings of ATMEGA2560-16AUⅦ. Applications of ATMEGA2560-16AUWith the rapid development of science and... -
06 March 2024
LIS3DHTR Alternatives, Specifications, Dimensions and Package
Ⅰ. What is LIS3DHTR?Ⅱ. Specifications of LIS3DHTRⅢ. Schematic diagram and working principle of LIS3DHTRⅣ. How to use LIS3DHTR?Ⅴ. Electrical characteristics of LIS3DHTRⅥ. What is the function of FIFO... -
07 March 2024
AMS1117-3.3 Voltage Regulator Instructions for Use: From Principle to Application
Ⅰ. Introduction to AMS1117-3.3Ⅱ. Symbol, footprint and pin configuration of AMS1117-3.3Ⅲ. What are the characteristics of AMS1117-3.3?Ⅳ. How does AMS1117-3.3 work?Ⅴ. Application cases of AMS1117-3.3Ⅵ. How to wire...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.