Vishay Siliconix IRFP340

Name: IRFP340
Brand: Vishay Siliconix
SKU: 3813695-IRFP340
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFP340

Manufacturer:: Vishay Siliconix

Ventron No:: 3813695-IRFP340

Description:: MOSFET N-CH 400V 11A TO-247AC

ECAD Model:

Datasheet:: IRFP340

Specifications

Vishay Siliconix IRFP340 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFP340.

Mounting Type
Through Hole
Package / Case
TO-247-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT APPLICABLE
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT APPLICABLE
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
150W Tc
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
550m Ω @ 6.6A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1.4pF @ 25V
Current - Continuous Drain (Id) @ 25°C
11A Tc
Gate Charge (Qg) (Max) @ Vgs
62nC @ 10V
Drain to Source Voltage (Vdss)
400V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
11A
Drain-source On Resistance-Max
0.54Ohm
Pulsed Drain Current-Max (IDM)
44A
DS Breakdown Voltage-Min
400V
Avalanche Energy Rating (Eas)
450 mJ
RoHS Status
Non-RoHS Compliant

Description

IRFP340 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 450 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1.4pF @ 25V.A device's drain current is its maximum continuous current, and this device's drain current is 11A.A maximum pulsed drain current of 44A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 400V.In order to operate this transistor, a voltage of 400V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IRFP340 Features
the avalanche energy rating (Eas) is 450 mJ
based on its rated peak drain current 44A.
a 400V drain to source voltage (Vdss)

IRFP340 Applications
There are a lot of Rochester Electronics, LLC
IRFP340 applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

IRFP340 More Descriptions

Trans MOSFET N-CH 400V 11A 3-Pin(3 Tab) TO-247AC
French Electronic Distributor since 1988
POWER MOFSET N CHANNEL

Product Comparison

The three parts on the right have similar specifications to IRFP340.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Mount

Number of Pins

Supplier Device Package

Series

Published

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Current Rating

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Nominal Vgs

REACH SVHC

Radiation Hardening

Lead Free

Weight

ECCN Code

Number of Channels

Case Connection

Height

Length

Width

View Compare
IRFP340

Vishay Siliconix

Through Hole

TO-247-3

NO

SILICON

-55°C~150°C TJ

Tube

e3

yes

Obsolete

1 (Unlimited)

3

MATTE TIN

MOSFET (Metal Oxide)

SINGLE

NOT APPLICABLE

unknown

NOT APPLICABLE

3

R-PSFM-T3

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

150W Tc

ENHANCEMENT MODE

N-Channel

SWITCHING

550m Ω @ 6.6A, 10V

4V @ 250μA

1.4pF @ 25V

11A Tc

62nC @ 10V

400V

10V

±20V

11A

0.54Ohm

44A

400V

450 mJ

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFP064VPBF

Infineon Technologies

Through Hole

TO-247-3

-

-

-55°C~175°C TJ

Bulk

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

1

-

250W Tc

-

N-Channel

-

5.5mOhm @ 78A, 10V

4V @ 250μA

6760pF @ 25V

130A Tc

260nC @ 10V

60V

10V

±20V

-

-

-

-

-

RoHS Compliant

Through Hole

3

TO-247AC

HEXFET®

2004

175°C

-55°C

60V

130A

Single

250W

26 ns

200ns

150 ns

100 ns

130A

20V

60V

6.76nF

5.5mOhm

5.5 mΩ

4 V

No SVHC

No

Lead Free

-

-

-

-

-

-

-

IRFP340 vs IRFP064VPBF
IRFP054

Vishay Siliconix

Through Hole

TO-247-3

-

SILICON

-55°C~175°C TJ

Tube

e0

no

Obsolete

1 (Unlimited)

3

TIN LEAD

MOSFET (Metal Oxide)

-

NOT SPECIFIED

-

NOT SPECIFIED

3

-

Not Qualified

1

-

230W Tc

ENHANCEMENT MODE

N-Channel

SWITCHING

14m Ω @ 54A, 10V

4V @ 250μA

4500pF @ 25V

70A Tc

160nC @ 10V

-

10V

±20V

-

-

-

-

-

Non-RoHS Compliant

Through Hole

3

-

-

2016

-

-

60V

70A

Single

230W

20 ns

160ns

150 ns

83 ns

70A

20V

60V

-

-

-

-

-

-

Contains Lead

38.000013g

EAR99

1

DRAIN

20.7mm

15.87mm

5.31mm

IRFP340 vs IRFP054
IRFP450B

Fairchild/ON Semiconductor

Through Hole

TO-3P-3, SC-65-3

-

-

-55°C~150°C TJ

Tube

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

205W Tc

-

N-Channel

-

390mOhm @ 7A, 10V

4V @ 250μA

3800pF @ 25V

14A Tc

113nC @ 10V

500V

10V

±30V

-

-

-

-

-

-

-

-

TO-3P

-

2001

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRFP340 vs IRFP450B