Infineon Technologies IRFP260NPBF

Name: IRFP260NPBF
Brand: Infineon Technologies
SKU: 2479994-IRFP260NPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFP260NPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2479994-IRFP260NPBF

Description:: MOSFET N-CH 200V 50A TO-247AC

ECAD Model:

Datasheet:: IRFP260NPBF

Specifications

Infineon Technologies IRFP260NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFP260NPBF.

Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Bulk
Series
HEXFET®
Published
2004
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Resistance
40mOhm
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory
FET General Purpose Power
Voltage - Rated DC
200V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
250
Current Rating
50A
Time@Peak Reflow Temperature-Max (s)
30
Number of Elements
1
Power Dissipation-Max
300W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
300W
Case Connection
DRAIN
Turn On Delay Time
17 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
40m Ω @ 28A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4057pF @ 25V
Current - Continuous Drain (Id) @ 25°C
50A Tc
Gate Charge (Qg) (Max) @ Vgs
234nC @ 10V
Rise Time
60ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
48 ns
Turn-Off Delay Time
55 ns
Continuous Drain Current (ID)
50A
Threshold Voltage
4V
JEDEC-95 Code
TO-247AC
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
200V
Pulsed Drain Current-Max (IDM)
200A
Dual Supply Voltage
200V
Avalanche Energy Rating (Eas)
560 mJ
Recovery Time
402 ns
Nominal Vgs
4 V
Height
20.2946mm
Length
15.875mm
Width
5.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead, Lead Free

Description

IRFP260NPBF Description
The IRFP260NPBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. The IRFP260NPBF features extremely low on-resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements, and fully avalanche rated as a result, power MOSFET is well known to provide extremely efficiency and reliability which can be used in a wide variety of applications.

IRFP260NPBF Features
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements

IRFP260NPBF Applications
DC motors
Inverters
SMPS
Lighting
Load switches
Battery-powered applications

IRFP260NPBF More Descriptions

MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.04Ohm;ID 50A;TO-247AC;PD 300W;VGS /-20V
Transistor: N-MOSFET; unipolar; 200V; 50A; 0.04ohm; 300W; -55 175 deg.C; THT; TO247AC
Single N-Channel 200V 0.04 Ohm 234 nC HEXFET® Power Mosfet - TO-247AC
Transistor NPN Mos IRFP260/IRFP260N INTERNATIONAL RECTIFIER Ampere=50 V=200 TO247
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHSInfineon SCT
Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
N Channel Mosfet, 200V, 50A, To-247Ac; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:50A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRFP260NPBF.
MOSFET, N, 200V, 49A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:200V; On Resistance Rds(on):40mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Junction to Case Thermal Resistance A:0.5°C/W; Package / Case:TO-247AC; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Pulse Current Idm:200A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

Product Comparison

The three parts on the right have similar specifications to IRFP260NPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Avalanche Energy Rating (Eas)

Recovery Time

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Pbfree Code

Terminal Position

Reach Compliance Code

JESD-30 Code

Qualification Status

Configuration

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Supplier Device Package

Weight

Max Operating Temperature

Min Operating Temperature

Number of Channels

Input Capacitance

Drain to Source Resistance

Rds On Max

View Compare
IRFP260NPBF

Infineon Technologies

12 Weeks

Through Hole

Through Hole

TO-247-3

3

SILICON

-55°C~175°C TJ

Bulk

HEXFET®

2004

e3

Active

1 (Unlimited)

3

Through Hole

EAR99

40mOhm

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

FET General Purpose Power

200V

MOSFET (Metal Oxide)

250

50A

30

1

300W Tc

Single

ENHANCEMENT MODE

300W

DRAIN

17 ns

N-Channel

SWITCHING

40m Ω @ 28A, 10V

4V @ 250μA

4057pF @ 25V

50A Tc

234nC @ 10V

60ns

10V

±20V

48 ns

55 ns

50A

4V

TO-247AC

20V

200V

200A

200V

560 mJ

402 ns

4 V

20.2946mm

15.875mm

5.3mm

No SVHC

No

ROHS3 Compliant

Contains Lead, Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFP150

Vishay Siliconix

-

-

Through Hole

TO-247-3

-

SILICON

-55°C~175°C TJ

Tube

-

-

e0

Obsolete

1 (Unlimited)

3

-

-

-

TIN LEAD

-

-

-

MOSFET (Metal Oxide)

NOT SPECIFIED

-

NOT SPECIFIED

1

230W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

55m Ω @ 25A, 10V

4V @ 250μA

2.8pF @ 25V

41A Tc

140nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

160A

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

NO

no

SINGLE

unknown

R-PSFM-T3

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

100V

40A

0.055Ohm

100V

-

-

-

-

-

-

-

-

IRFP260NPBF vs IRFP150
IRFP344PBF

Vishay Siliconix

-

Through Hole

Through Hole

TO-247-3

3

-

-55°C~150°C TJ

Tube

-

1997

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

450V

MOSFET (Metal Oxide)

-

9.5A

-

-

150W Tc

Single

-

150W

-

8.7 ns

N-Channel

-

630mOhm @ 5.7A, 10V

4V @ 250μA

1400pF @ 25V

9.5A Tc

80nC @ 10V

28ns

10V

±20V

27 ns

58 ns

9.5A

4V

-

20V

450V

-

-

-

-

-

20.7mm

15.87mm

5.31mm

Unknown

-

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

450V

-

-

-

TO-247-3

38.000013g

150°C

-55°C

1

1.4nF

630mOhm

630 mΩ

IRFP260NPBF vs IRFP344PBF
IRFP350

Vishay Siliconix

-

Through Hole

Through Hole

TO-247-3

3

-

-55°C~150°C TJ

Tube

-

2015

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

400V

MOSFET (Metal Oxide)

-

16A

-

-

190W Tc

Single

-

190W

-

16 ns

N-Channel

-

300mOhm @ 9.6A, 10V

4V @ 250μA

2600pF @ 25V

16A Tc

150nC @ 10V

49ns

10V

±20V

47 ns

87 ns

16A

-

-

20V

400V

-

-

-

-

-

20.7mm

15.87mm

5.31mm

-

-

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

400V

-

-

-

TO-247-3

38.000013g

150°C

-55°C

1

2.6nF

300mOhm

300 mΩ

IRFP260NPBF vs IRFP350

Certification

Related parts for IRFP260NPBF

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Infineon Technologies

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Vishay Siliconix

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IRFP350LC

Vishay Siliconix

MOSFET N-CH 400V 16A TO-247AC
IRFP450B

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Part Number	Manufacturers	Description	Stock	Price
IRFP260NPBF DISTI #IRFP260NPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 50A 3-Pin(3 Tab) TO-247A	20574	1 $1.8437
IRFP260NPBF DISTI #IRFP260NPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 50A 3-Pin(3 Tab) TO-247A	206	400 $1.8437 2000 $1.5714 4000 $1.4993 10000 $1.3958
IRFP260NPBF DISTI #IRFP260NPBF	Infineon Technologies AG	MOSFET N-CH 200V 50A TO-247AC RoHS: Compliant	7514	1 $3.92 10 $3.521 100 $2.9279 500 $2.41416 1000 $2.07168
IRFP260NPBF DISTI #IRFP260NPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 50A 3-Pin(3 Tab) TO-247A	20574	6 $1.8437
IRFP260NPBF DISTI #IRFP260NPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 50A 3-Pin(3 Tab) TO-247A	1622	10 $1.5264 100 $1.4304 1000 $1.3344
IRFP260NPBF DISTI #IRFP260NPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 50A 3-Pin(3 Tab) TO-247A	206	5 $1.8437
IRFP260NPBF DISTI #IRFP260NPBF	Infineon Technologies AG	Trans MOSFET N-CH 200V 50A 3-Pin(3 Tab) TO-247AC ( RoHS: Compliant	0
IRFP260NPBF DISTI #IRFP260NPBF	Infineon Technologies AG	Trans MOSFET N-CH 200V 50A 3-Pin(3 Tab) TO-247AC - RoHS: Compliant	0	1 $1.29 10 $1.29 25 $1.29 50 $1.29 100 $1.19 500 $1.19 1000 $1.19
IRFP260NPBF DISTI #IRFP260NPBF	Infineon Technologies AG	N CHANNEL MOSFET, 200V, 50A, TO-247AC, Transistor	739	1 $3.4 10 $2.94 25 $2.82 50 $2.7 100 $2.59 250 $2.46 500 $2.23
IRFP260NPBF. DISTI #IRFP260NPBF.	Infineon Technologies AG	N CHANNEL MOSFET, 200V, 50A, TO-247AC, Transistor	0	1 $3.62 10 $3.12 25 $3 50 $2.82 100 $2.69 250 $2.56 500 $2.32
IRFP260NPBF DISTI #IRFP260NPBF	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 200V, RDS(ON) 0.04Oh RoHS: Compliant	465	1 $4.48 10 $3.95 100 $3.45 500 $2.99 1000 $2.64
IRFP260NPBF DISTI #IRFP260NPBF	Infineon Technologies AG	MOSFET MOSFT 200V 49A 40mOhm 156nCAC RoHS: Compliant	13131	1 $3.17 10 $2.7 100 $2.34 250 $2.22 500 $1.99
IRFP260NPBF DISTI #IRFP260NPBF	Infineon Technologies AG	Single N-Channel 200V 0.04 Ohm 234 nC HEXFET Power RoHS: Compliant	15883	10 $1.82 75 $1.62 400 $1.39
IRFP260NPBF DISTI #IRFP260NPBF	Infineon Technologies AG	MOSFET N-CHANNEL 200V 50A TO247AC, EA	4091	1 $3.06 13 $1.77
IRFP260NPBF DISTI #IRFP260NPBF	Infineon Technologies AG	MOSFET N-CHANNEL 200V 50A TO247AC, TU	625	25 $1.67 125 $1.427 250 $1.352
IRFP260NPBF DISTI #IRFP260NPBF	International Rectifier		30
IRFP260N PBF DISTI #IRFP260N PBF	International Rectifier		5
IRFP260NPBF DISTI #IRFP260NPBF	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 200V, 35A, 300	1155	1 $2.22 3 $2.03 10 $1.65 100 $1.41
IRFP260NPBF DISTI #IRFP260NPBF	Infineon Technologies AG	N-Ch 200V 50A 300W 0,04R TO247AC RoHS: Compliant	2630	5 $2.04 25 $1.44 100 $1.24 200 $1.2
IRFP260NPBF DISTI #IRFP260NPBF	International Rectifier	INSTOCK	461
IRFP260NPBF DISTI #IRFP260NPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 50A 3-Pin(3 Tab) TO-247A RoHS: Compliant	427	1 $3.47 10 $2.95 50 $2.49 100 $2.2
IRFP260NPBF DISTI #IRFP260NPBF	Infineon Technologies AG	MOSFETs RoHS: Compliant	206	1 $2.884 10 $2.507 100 $2.207
IRFP260NPBF DISTI #IRFP260NPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 50A 3-Pin(3 Tab) TO-247A RoHS: Compliant	974	400 $2.3786
IRFP260NPBF DISTI #IRFP260NPBF	Infineon Technologies AG	MOSFET, N, 200V, 49A, TO-247AC RoHS: Compliant	1191	1 $5.02 10 $4.28 100 $3.71 250 $3.52 500 $3.15 1000 $2.66
IRFP260NPBF DISTI #IRFP260NPBF	Infineon Technologies AG	MOSFET, N, 200V, 49A, TO-247AC RoHS: Compliant	1365	1 $2.69 10 $1.67 100 $1.43 250 $1.35 500 $1.31

IRFP260~~(7)~~
IRFP26~~(12)~~
IRFP2~~(60)~~
IRFP~~(73)~~
IRF~~(69)~~

Infineon Technologies IRFP260NPBF

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