IRFP254

Vishay Siliconix IRFP254

Part Number:
IRFP254
Manufacturer:
Vishay Siliconix
Ventron No:
2491638-IRFP254
Description:
MOSFET N-CH 250V 23A TO-247AC
ECAD Model:
Datasheet:
IRFP254

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Specifications
Vishay Siliconix IRFP254 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFP254.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-247-3
  • Weight
    38.000013g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2016
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    250V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    23A
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    190W Tc
  • Element Configuration
    Single
  • Power Dissipation
    190W
  • Turn On Delay Time
    15 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    140mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2700pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    23A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    140nC @ 10V
  • Rise Time
    63ns
  • Drain to Source Voltage (Vdss)
    250V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    50 ns
  • Turn-Off Delay Time
    74 ns
  • Continuous Drain Current (ID)
    23A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    250V
  • Input Capacitance
    2.7nF
  • Drain to Source Resistance
    140mOhm
  • Rds On Max
    140 mΩ
  • Height
    20.7mm
  • Length
    15.87mm
  • Width
    5.31mm
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
IRFP254 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2700pF @ 25V.This device conducts a continuous drain current (ID) of 23A, which is the maximum continuous current transistor can conduct.Using VGS=250V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 250V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 74 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 140mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 15 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 250V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRFP254 Features
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 74 ns
single MOSFETs transistor is 140mOhm
a 250V drain to source voltage (Vdss)


IRFP254 Applications
There are a lot of Vishay Siliconix
IRFP254 applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IRFP254 More Descriptions
Trans MOSFET N-CH 250V 23A 3-Pin(3 Tab) TO-247AC
Power Field-Effect Transistor, 23A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:250V; Continuous Drain Current, Id:23A; On-Resistance, Rds(on):140mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC; Drain Source On Resistance @ 10V:140mohm RoHS Compliant: No
MOSFET, N TO-247; Transistor Type:MOSFET; Transistor Polarity:N; Current, Id Cont:23A; Resistance, Rds On:0.14ohm; Case Style:TO-247AC; Current, Idm Pulse:92A; Lead Spacing:5.45mm; No. of Pins:3; Power Dissipation:190W; Power, Pd:190W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:250V
Product Comparison
The three parts on the right have similar specifications to IRFP254.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    RoHS Status
    Lead Free
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Operating Mode
    Case Connection
    Transistor Application
    Surface Mount
    Terminal Position
    Reach Compliance Code
    JESD-30 Code
    Configuration
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Radiation Hardening
    View Compare
  • IRFP254
    IRFP254
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    250V
    MOSFET (Metal Oxide)
    23A
    1
    1
    190W Tc
    Single
    190W
    15 ns
    N-Channel
    140mOhm @ 14A, 10V
    4V @ 250μA
    2700pF @ 25V
    23A Tc
    140nC @ 10V
    63ns
    250V
    10V
    ±20V
    50 ns
    74 ns
    23A
    20V
    250V
    2.7nF
    140mOhm
    140 mΩ
    20.7mm
    15.87mm
    5.31mm
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFP054
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    38.000013g
    -55°C~175°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    -
    -
    60V
    MOSFET (Metal Oxide)
    70A
    1
    1
    230W Tc
    Single
    230W
    20 ns
    N-Channel
    14m Ω @ 54A, 10V
    4V @ 250μA
    4500pF @ 25V
    70A Tc
    160nC @ 10V
    160ns
    -
    10V
    ±20V
    150 ns
    83 ns
    70A
    20V
    60V
    -
    -
    -
    20.7mm
    15.87mm
    5.31mm
    Non-RoHS Compliant
    Contains Lead
    SILICON
    e0
    no
    3
    EAR99
    TIN LEAD
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFP150
    -
    Through Hole
    TO-247-3
    -
    -
    -
    -55°C~175°C TJ
    Tube
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    1
    -
    230W Tc
    -
    -
    -
    N-Channel
    55m Ω @ 25A, 10V
    4V @ 250μA
    2.8pF @ 25V
    41A Tc
    140nC @ 10V
    -
    100V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    SILICON
    e0
    no
    3
    -
    TIN LEAD
    NOT SPECIFIED
    NOT SPECIFIED
    -
    COMMERCIAL
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    NO
    SINGLE
    unknown
    R-PSFM-T3
    SINGLE WITH BUILT-IN DIODE
    40A
    0.055Ohm
    160A
    100V
    -
  • IRFP32N50K
    Through Hole
    Through Hole
    TO-247-3
    -
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    2014
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    500V
    MOSFET (Metal Oxide)
    32A
    -
    1
    460W Tc
    Single
    -
    28 ns
    N-Channel
    160mOhm @ 32A, 10V
    5V @ 250μA
    5280pF @ 25V
    32A Tc
    190nC @ 10V
    120ns
    500V
    10V
    ±30V
    54 ns
    48 ns
    32A
    30V
    500V
    5.28nF
    160mOhm
    160 mΩ
    20.7mm
    15.87mm
    5.31mm
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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