Vishay Siliconix IRFP254
- Part Number:
- IRFP254
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2491638-IRFP254
- Description:
- MOSFET N-CH 250V 23A TO-247AC
- Datasheet:
- IRFP254
Vishay Siliconix IRFP254 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFP254.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Supplier Device PackageTO-247-3
- Weight38.000013g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2016
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC250V
- TechnologyMOSFET (Metal Oxide)
- Current Rating23A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max190W Tc
- Element ConfigurationSingle
- Power Dissipation190W
- Turn On Delay Time15 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs140mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2700pF @ 25V
- Current - Continuous Drain (Id) @ 25°C23A Tc
- Gate Charge (Qg) (Max) @ Vgs140nC @ 10V
- Rise Time63ns
- Drain to Source Voltage (Vdss)250V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)50 ns
- Turn-Off Delay Time74 ns
- Continuous Drain Current (ID)23A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage250V
- Input Capacitance2.7nF
- Drain to Source Resistance140mOhm
- Rds On Max140 mΩ
- Height20.7mm
- Length15.87mm
- Width5.31mm
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRFP254 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2700pF @ 25V.This device conducts a continuous drain current (ID) of 23A, which is the maximum continuous current transistor can conduct.Using VGS=250V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 250V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 74 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 140mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 15 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 250V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFP254 Features
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 74 ns
single MOSFETs transistor is 140mOhm
a 250V drain to source voltage (Vdss)
IRFP254 Applications
There are a lot of Vishay Siliconix
IRFP254 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2700pF @ 25V.This device conducts a continuous drain current (ID) of 23A, which is the maximum continuous current transistor can conduct.Using VGS=250V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 250V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 74 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 140mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 15 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 250V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFP254 Features
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 74 ns
single MOSFETs transistor is 140mOhm
a 250V drain to source voltage (Vdss)
IRFP254 Applications
There are a lot of Vishay Siliconix
IRFP254 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IRFP254 More Descriptions
Trans MOSFET N-CH 250V 23A 3-Pin(3 Tab) TO-247AC
Power Field-Effect Transistor, 23A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:250V; Continuous Drain Current, Id:23A; On-Resistance, Rds(on):140mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC; Drain Source On Resistance @ 10V:140mohm RoHS Compliant: No
MOSFET, N TO-247; Transistor Type:MOSFET; Transistor Polarity:N; Current, Id Cont:23A; Resistance, Rds On:0.14ohm; Case Style:TO-247AC; Current, Idm Pulse:92A; Lead Spacing:5.45mm; No. of Pins:3; Power Dissipation:190W; Power, Pd:190W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:250V
Power Field-Effect Transistor, 23A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:250V; Continuous Drain Current, Id:23A; On-Resistance, Rds(on):140mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC; Drain Source On Resistance @ 10V:140mohm RoHS Compliant: No
MOSFET, N TO-247; Transistor Type:MOSFET; Transistor Polarity:N; Current, Id Cont:23A; Resistance, Rds On:0.14ohm; Case Style:TO-247AC; Current, Idm Pulse:92A; Lead Spacing:5.45mm; No. of Pins:3; Power Dissipation:190W; Power, Pd:190W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:250V
The three parts on the right have similar specifications to IRFP254.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRoHS StatusLead FreeTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusOperating ModeCase ConnectionTransistor ApplicationSurface MountTerminal PositionReach Compliance CodeJESD-30 CodeConfigurationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinRadiation HardeningView Compare
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IRFP254Through HoleThrough HoleTO-247-33TO-247-338.000013g-55°C~150°C TJTube2016Obsolete1 (Unlimited)150°C-55°C250VMOSFET (Metal Oxide)23A11190W TcSingle190W15 nsN-Channel140mOhm @ 14A, 10V4V @ 250μA2700pF @ 25V23A Tc140nC @ 10V63ns250V10V±20V50 ns74 ns23A20V250V2.7nF140mOhm140 mΩ20.7mm15.87mm5.31mmNon-RoHS CompliantContains Lead------------------------
-
Through HoleThrough HoleTO-247-33-38.000013g-55°C~175°C TJTube2016Obsolete1 (Unlimited)--60VMOSFET (Metal Oxide)70A11230W TcSingle230W20 nsN-Channel14m Ω @ 54A, 10V4V @ 250μA4500pF @ 25V70A Tc160nC @ 10V160ns-10V±20V150 ns83 ns70A20V60V---20.7mm15.87mm5.31mmNon-RoHS CompliantContains LeadSILICONe0no3EAR99TIN LEADNOT SPECIFIEDNOT SPECIFIED3Not QualifiedENHANCEMENT MODEDRAINSWITCHING----------
-
-Through HoleTO-247-3----55°C~175°C TJTube-Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-1-230W Tc---N-Channel55m Ω @ 25A, 10V4V @ 250μA2.8pF @ 25V41A Tc140nC @ 10V-100V10V±20V-----------Non-RoHS Compliant-SILICONe0no3-TIN LEADNOT SPECIFIEDNOT SPECIFIED-COMMERCIALENHANCEMENT MODEDRAINSWITCHINGNOSINGLEunknownR-PSFM-T3SINGLE WITH BUILT-IN DIODE40A0.055Ohm160A100V-
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Through HoleThrough HoleTO-247-3-TO-247-338.000013g-55°C~150°C TJTube2014Obsolete1 (Unlimited)150°C-55°C500VMOSFET (Metal Oxide)32A-1460W TcSingle-28 nsN-Channel160mOhm @ 32A, 10V5V @ 250μA5280pF @ 25V32A Tc190nC @ 10V120ns500V10V±30V54 ns48 ns32A30V500V5.28nF160mOhm160 mΩ20.7mm15.87mm5.31mmNon-RoHS CompliantContains Lead----------------------No
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