Infineon Technologies IRFP250MPBF

Name: IRFP250MPBF
Brand: Infineon Technologies
SKU: 3554222-IRFP250MPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFP250MPBF

Manufacturer:: Infineon Technologies

Ventron No:: 3554222-IRFP250MPBF

Description:: MOSFET N-CH 200V 30A TO-247AC

ECAD Model:

Datasheet:: IRFP250MPBF

Specifications

Infineon Technologies IRFP250MPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFP250MPBF.

Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Published
2009
Series
HEXFET®
Packaging
Tube
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
75MOhm
Terminal Finish
MATTE TIN OVER NICKEL
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
250
Time@Peak Reflow Temperature-Max (s)
30
Number of Elements
1
Power Dissipation-Max
214W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
214W
Turn On Delay Time
14 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
75m Ω @ 18A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2159pF @ 25V
Current - Continuous Drain (Id) @ 25°C
30A Tc
Gate Charge (Qg) (Max) @ Vgs
123nC @ 10V
Rise Time
43ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
33 ns
Turn-Off Delay Time
41 ns
Continuous Drain Current (ID)
30A
Threshold Voltage
4V
JEDEC-95 Code
TO-247AC
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
200V
Height
21.1mm
Length
16.129mm
Width
5.2mm
RoHS Status
ROHS3 Compliant
Radiation Hardening
No
REACH SVHC
No SVHC
Lead Free
Lead Free

Description

IRFP250MPBF Description

IRFP250MPBF belongs to the family of MOSFET designed based on the IR MOSFET? technology that makes use of advanced processing techniques to make extremely low on-resistance per silicon area possible. Moreover, the IR MOSFET? technology achieves fast switching speed and rugged device design. All of these make the IRFP250MPBF be more efficient and reliable and be used in a wide range of applications.

IRFP250MPBF Features

Fast switching speed
Simple drive requirements
Advanced processing techniques
Low on-resistance per silicon area
Maximum power consumption of 214 W
Available in the TO-247AD package with isolated mounting hole

IRFP250MPBF Applications

Welding equipment
Inverter power supply
Inverter welding machine
High-power power supply

IRFP250MPBF More Descriptions

200V Single N-Channel HEXFET Power MOSFET in a TO-247AC Series M package, TO247-3, RoHSInfineon SCT
Single N-Channel 200 V 75 mOhm 123 nC HEXFET® Power Mosfet - TO-247AC
MOSFET, N-CH, 200V, 30A, TO-247AC-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V;
Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 30 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 75 / Gate-Source Voltage V = 20 / Fall Time ns = 33 / Rise Time ns = 43 / Turn-OFF Delay Time ns = 41 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-247AD / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 214

Product Comparison

The three parts on the right have similar specifications to IRFP250MPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Published

Series

Packaging

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Additional Feature

Subcategory

Technology

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

RoHS Status

Radiation Hardening

REACH SVHC

Lead Free

Weight

Pbfree Code

Voltage - Rated DC

Current Rating

Pin Count

Qualification Status

Number of Channels

Case Connection

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Drain to Source Voltage (Vdss)

Input Capacitance

Drain to Source Resistance

Rds On Max

Nominal Vgs

View Compare
IRFP250MPBF

Infineon Technologies

12 Weeks

Through Hole

Through Hole

TO-247-3

3

SILICON

-55°C~175°C TJ

2009

HEXFET®

Tube

e3

Active

1 (Unlimited)

3

EAR99

75MOhm

MATTE TIN OVER NICKEL

AVALANCHE RATED, HIGH RELIABILITY

FET General Purpose Power

MOSFET (Metal Oxide)

250

30

1

214W Tc

Single

ENHANCEMENT MODE

214W

14 ns

N-Channel

SWITCHING

75m Ω @ 18A, 10V

4V @ 250μA

2159pF @ 25V

30A Tc

123nC @ 10V

43ns

10V

±20V

33 ns

41 ns

30A

4V

TO-247AC

20V

200V

21.1mm

16.129mm

5.2mm

ROHS3 Compliant

No

No SVHC

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFP054

Vishay Siliconix

-

Through Hole

Through Hole

TO-247-3

3

SILICON

-55°C~175°C TJ

2016

-

Tube

e0

Obsolete

1 (Unlimited)

3

EAR99

-

TIN LEAD

-

-

MOSFET (Metal Oxide)

NOT SPECIFIED

NOT SPECIFIED

1

230W Tc

Single

ENHANCEMENT MODE

230W

20 ns

N-Channel

SWITCHING

14m Ω @ 54A, 10V

4V @ 250μA

4500pF @ 25V

70A Tc

160nC @ 10V

160ns

10V

±20V

150 ns

83 ns

70A

-

-

20V

60V

20.7mm

15.87mm

5.31mm

Non-RoHS Compliant

-

-

Contains Lead

38.000013g

no

60V

70A

3

Not Qualified

1

DRAIN

-

-

-

-

-

-

-

-

IRFP250MPBF vs IRFP054
IRFP350LC

Vishay Siliconix

-

Through Hole

Through Hole

TO-247-3

3

-

-55°C~150°C TJ

2016

-

Tube

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

1

190W Tc

Single

-

190W

14 ns

N-Channel

-

300mOhm @ 9.6A, 10V

4V @ 250μA

2200pF @ 25V

16A Tc

76nC @ 10V

54ns

10V

±30V

35 ns

33 ns

16A

4V

-

30V

400V

20.7mm

15.87mm

5.31mm

Non-RoHS Compliant

No

Unknown

-

38.000013g

-

-

-

-

-

1

-

TO-247-3

150°C

-55°C

400V

2.2nF

300mOhm

300 mΩ

4 V

IRFP250MPBF vs IRFP350LC
IRFP344PBF

Vishay Siliconix

-

Through Hole

Through Hole

TO-247-3

3

-

-55°C~150°C TJ

1997

-

Tube

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

150W Tc

Single

-

150W

8.7 ns

N-Channel

-

630mOhm @ 5.7A, 10V

4V @ 250μA

1400pF @ 25V

9.5A Tc

80nC @ 10V

28ns

10V

±20V

27 ns

58 ns

9.5A

4V

-

20V

450V

20.7mm

15.87mm

5.31mm

ROHS3 Compliant

-

Unknown

Lead Free

38.000013g

-

450V

9.5A

-

-

1

-

TO-247-3

150°C

-55°C

450V

1.4nF

630mOhm

630 mΩ

-

IRFP250MPBF vs IRFP344PBF