STMicroelectronics IRFP250

Name: IRFP250
Brand: STMicroelectronics
SKU: 2488474-IRFP250
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFP250

Manufacturer:: STMicroelectronics

Ventron No:: 2488474-IRFP250

Description:: MOSFET N-CH 200V 33A TO-247

ECAD Model:

Datasheet:: IRFP250 IRFP250

Specifications

STMicroelectronics IRFP250 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics IRFP250.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
PowerMESH™ II
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
FET General Purpose Power
Voltage - Rated DC
200V
Technology
MOSFET (Metal Oxide)
Current Rating
33A
Base Part Number
IRFP
Pin Count
3
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Power Dissipation-Max
180W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
180W
Turn On Delay Time
25 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
85m Ω @ 16A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2850pF @ 25V
Current - Continuous Drain (Id) @ 25°C
33A Tc
Gate Charge (Qg) (Max) @ Vgs
158nC @ 10V
Rise Time
50ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
40 ns
Continuous Drain Current (ID)
33A
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.085Ohm
Drain to Source Breakdown Voltage
200V
Pulsed Drain Current-Max (IDM)
132A
Avalanche Energy Rating (Eas)
600 mJ
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Lead Free
Lead Free

Description

IRFP250 Description

The IRFP250 n channel advanced power mosfet is designed to power loads that require less than 60V and 200mA of current. Mosfets, like transistors, are power electronic switches. These, on the other hand, have higher voltage and current ratings. This IRFP250 mosfet comes in a TO-92 packaging and has a 3V threshold.

IRFP250 Features

Fast Switching
Ease of Paralleling
Dynamic dV/dt Rating
Repetitive Avalanche Rated
Isolated Central Mounting Hole
Simple Drive Requirements
Compliant to RoHS Directive 2002/95/EC

IRFP250 Applications

High current, high speed switching
Uninterruptible power supplies (ups)
dc-ac converters for telecom
Industrial, and lighting equipment
LED flashers or dimmers
Low power analog inverters or converters
Small signal switching
Switching high voltage loads

IRFP250 More Descriptions

Power Field-Effect Transistor, 30A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Single-Gate MOSFET Transistors 200V Single N-Channel HEXFET
Trans MOSFET N-CH 200V 30A 3-Pin (3 Tab) TO-247AC
irfp250 power transistor module
MOSFET; Peak Reflow Compatible (260 C):No; Drain Source On Resistance @ 10V:85mohm; Thermal Resistance, Junction-Case:0.65°C/W; Continuous Drain Current - 100 Deg C:19A; Gate-To-Drain Charge:74nC; Leaded Process Compatible:No ;RoHS Compliant: No

Product Comparison

The three parts on the right have similar specifications to IRFP250.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Current Rating

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Radiation Hardening

RoHS Status

Lead Free

Number of Pins

Weight

Published

Pbfree Code

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Number of Channels

Case Connection

Turn-Off Delay Time

Height

Length

Width

Surface Mount

Terminal Position

Reach Compliance Code

Configuration

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Threshold Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

REACH SVHC

View Compare
IRFP250

STMicroelectronics

Through Hole

Through Hole

TO-247-3

SILICON

150°C TJ

Tube

PowerMESH™ II

e0

Obsolete

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

FET General Purpose Power

200V

MOSFET (Metal Oxide)

33A

IRFP

3

R-PSFM-T3

1

180W Tc

Single

ENHANCEMENT MODE

180W

25 ns

N-Channel

SWITCHING

85m Ω @ 16A, 10V

4V @ 250μA

2850pF @ 25V

33A Tc

158nC @ 10V

50ns

10V

±20V

40 ns

33A

20V

0.085Ohm

200V

132A

600 mJ

No

Non-RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFP054

Vishay Siliconix

Through Hole

Through Hole

TO-247-3

SILICON

-55°C~175°C TJ

Tube

-

e0

Obsolete

1 (Unlimited)

3

EAR99

TIN LEAD

-

60V

MOSFET (Metal Oxide)

70A

-

3

-

1

230W Tc

Single

ENHANCEMENT MODE

230W

20 ns

N-Channel

SWITCHING

14m Ω @ 54A, 10V

4V @ 250μA

4500pF @ 25V

70A Tc

160nC @ 10V

160ns

10V

±20V

150 ns

70A

20V

-

60V

-

-

-

Non-RoHS Compliant

Contains Lead

3

38.000013g

2016

no

NOT SPECIFIED

NOT SPECIFIED

Not Qualified

1

DRAIN

83 ns

20.7mm

15.87mm

5.31mm

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRFP250 vs IRFP054
IRFP150

Vishay Siliconix

-

Through Hole

TO-247-3

SILICON

-55°C~175°C TJ

Tube

-

e0

Obsolete

1 (Unlimited)

3

-

TIN LEAD

-

-

MOSFET (Metal Oxide)

-

-

-

R-PSFM-T3

1

230W Tc

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

55m Ω @ 25A, 10V

4V @ 250μA

2.8pF @ 25V

41A Tc

140nC @ 10V

-

10V

±20V

-

-

-

0.055Ohm

-

160A

-

-

Non-RoHS Compliant

-

-

-

-

no

NOT SPECIFIED

NOT SPECIFIED

COMMERCIAL

-

DRAIN

-

-

-

-

NO

SINGLE

unknown

SINGLE WITH BUILT-IN DIODE

100V

40A

100V

-

-

-

-

-

-

-

-

IRFP250 vs IRFP150
IRFP344PBF

Vishay Siliconix

Through Hole

Through Hole

TO-247-3

-

-55°C~150°C TJ

Tube

-

-

Obsolete

1 (Unlimited)

-

-

-

-

450V

MOSFET (Metal Oxide)

9.5A

-

-

-

-

150W Tc

Single

-

150W

8.7 ns

N-Channel

-

630mOhm @ 5.7A, 10V

4V @ 250μA

1400pF @ 25V

9.5A Tc

80nC @ 10V

28ns

10V

±20V

27 ns

9.5A

20V

-

450V

-

-

-

ROHS3 Compliant

Lead Free

3

38.000013g

1997

-

-

-

-

1

-

58 ns

20.7mm

15.87mm

5.31mm

-

-

-

-

450V

-

-

TO-247-3

150°C

-55°C

4V

1.4nF

630mOhm

630 mΩ

Unknown

IRFP250 vs IRFP344PBF