Vishay Siliconix IRFP244PBF
- Part Number:
- IRFP244PBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2848894-IRFP244PBF
- Description:
- MOSFET N-CH 250V 15A TO-247AC
- Datasheet:
- IRFP244PBF
Vishay Siliconix IRFP244PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFP244PBF.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Supplier Device PackageTO-247-3
- Weight38.000013g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2008
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance280mOhm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC250V
- TechnologyMOSFET (Metal Oxide)
- Current Rating15A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max150W Tc
- Element ConfigurationSingle
- Power Dissipation150W
- Turn On Delay Time14 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs280mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1400pF @ 25V
- Current - Continuous Drain (Id) @ 25°C15A Tc
- Gate Charge (Qg) (Max) @ Vgs63nC @ 10V
- Rise Time49ns
- Drain to Source Voltage (Vdss)250V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)24 ns
- Turn-Off Delay Time42 ns
- Continuous Drain Current (ID)15A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage250V
- Input Capacitance1.4nF
- Drain to Source Resistance280mOhm
- Rds On Max280 mΩ
- Nominal Vgs4 V
- Height20.7mm
- Length15.87mm
- Width5.31mm
- REACH SVHCUnknown
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFP244PBF Overview
A device's maximum input capacitance is 1400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 15A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=250V, and this device has a drain-to-source breakdown voltage of 250V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 42 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 280mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.To operate this transistor, you need to apply a 250V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFP244PBF Features
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 42 ns
single MOSFETs transistor is 280mOhm
a threshold voltage of 4V
a 250V drain to source voltage (Vdss)
IRFP244PBF Applications
There are a lot of Vishay Siliconix
IRFP244PBF applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 1400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 15A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=250V, and this device has a drain-to-source breakdown voltage of 250V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 42 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 280mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.To operate this transistor, you need to apply a 250V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFP244PBF Features
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 42 ns
single MOSFETs transistor is 280mOhm
a threshold voltage of 4V
a 250V drain to source voltage (Vdss)
IRFP244PBF Applications
There are a lot of Vishay Siliconix
IRFP244PBF applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRFP244PBF More Descriptions
Single N-Channel 250 V 0.28 Ohms Flange Mount Power Mosfet - TO-247AC
Power Field-Effect Transistor, 15A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:250V; Continuous Drain Current, Id:15A; On Resistance, Rds(on):280mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC ;RoHS Compliant: Yes
MOSFET, N TO-247AC 250V 15A; Transistor Type:MOSFET; Transistor Polarity:N; Current, Id Cont:15A; On State Resistance:0.28ohm; Case Style:TO-247AC; Current, Idm Pulse:60A; Junction to Case Thermal Resistance A:0.83°C/W; On state resistance @ Vgs = 10V:0.28ohm; Power Dissipation:150W; Power Dissipation Pd:150W; Voltage, Vds Max:250V
Power Field-Effect Transistor, 15A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:250V; Continuous Drain Current, Id:15A; On Resistance, Rds(on):280mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC ;RoHS Compliant: Yes
MOSFET, N TO-247AC 250V 15A; Transistor Type:MOSFET; Transistor Polarity:N; Current, Id Cont:15A; On State Resistance:0.28ohm; Case Style:TO-247AC; Current, Idm Pulse:60A; Junction to Case Thermal Resistance A:0.83°C/W; On state resistance @ Vgs = 10V:0.28ohm; Power Dissipation:150W; Power Dissipation Pd:150W; Voltage, Vds Max:250V
The three parts on the right have similar specifications to IRFP244PBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRoHS StatusLead FreeSurface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinRadiation HardeningView Compare
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IRFP244PBF8 WeeksThrough HoleThrough HoleTO-247-33TO-247-338.000013g-55°C~150°C TJTube2008Active1 (Unlimited)280mOhm150°C-55°C250VMOSFET (Metal Oxide)15A11150W TcSingle150W14 nsN-Channel280mOhm @ 9A, 10V4V @ 250μA1400pF @ 25V15A Tc63nC @ 10V49ns250V10V±20V24 ns42 ns15A4V20V250V1.4nF280mOhm280 mΩ4 V20.7mm15.87mm5.31mmUnknownROHS3 CompliantLead Free----------------------
-
--Through HoleTO-247-3----55°C~175°C TJTube-Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-1-230W Tc---N-Channel55m Ω @ 25A, 10V4V @ 250μA2.8pF @ 25V41A Tc140nC @ 10V-100V10V±20V--------------Non-RoHS Compliant-NOSILICONe0no3TIN LEADSINGLENOT SPECIFIEDunknownNOT SPECIFIEDR-PSFM-T3COMMERCIALSINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING40A0.055Ohm160A100V-
-
-Through HoleThrough HoleTO-247-33TO-247-338.000013g-55°C~150°C TJTube2016Obsolete1 (Unlimited)-150°C-55°C-MOSFET (Metal Oxide)-11190W TcSingle190W14 nsN-Channel300mOhm @ 9.6A, 10V4V @ 250μA2200pF @ 25V16A Tc76nC @ 10V54ns400V10V±30V35 ns33 ns16A4V30V400V2.2nF300mOhm300 mΩ4 V20.7mm15.87mm5.31mmUnknownNon-RoHS Compliant---------------------No
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-Through HoleThrough HoleTO-247-33TO-247-338.000013g-55°C~150°C TJTube2015Obsolete1 (Unlimited)-150°C-55°C400VMOSFET (Metal Oxide)16A-1190W TcSingle190W16 nsN-Channel300mOhm @ 9.6A, 10V4V @ 250μA2600pF @ 25V16A Tc150nC @ 10V49ns400V10V±20V47 ns87 ns16A-20V400V2.6nF300mOhm300 mΩ-20.7mm15.87mm5.31mm-Non-RoHS CompliantContains Lead---------------------
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