IRFP244PBF

Vishay Siliconix IRFP244PBF

Part Number:
IRFP244PBF
Manufacturer:
Vishay Siliconix
Ventron No:
2848894-IRFP244PBF
Description:
MOSFET N-CH 250V 15A TO-247AC
ECAD Model:
Datasheet:
IRFP244PBF

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Specifications
Vishay Siliconix IRFP244PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFP244PBF.
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-247-3
  • Weight
    38.000013g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2008
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    280mOhm
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    250V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    15A
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    150W Tc
  • Element Configuration
    Single
  • Power Dissipation
    150W
  • Turn On Delay Time
    14 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    280mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1400pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    15A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    63nC @ 10V
  • Rise Time
    49ns
  • Drain to Source Voltage (Vdss)
    250V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    24 ns
  • Turn-Off Delay Time
    42 ns
  • Continuous Drain Current (ID)
    15A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    250V
  • Input Capacitance
    1.4nF
  • Drain to Source Resistance
    280mOhm
  • Rds On Max
    280 mΩ
  • Nominal Vgs
    4 V
  • Height
    20.7mm
  • Length
    15.87mm
  • Width
    5.31mm
  • REACH SVHC
    Unknown
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFP244PBF Overview
A device's maximum input capacitance is 1400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 15A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=250V, and this device has a drain-to-source breakdown voltage of 250V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 42 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 280mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.To operate this transistor, you need to apply a 250V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IRFP244PBF Features
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 42 ns
single MOSFETs transistor is 280mOhm
a threshold voltage of 4V
a 250V drain to source voltage (Vdss)


IRFP244PBF Applications
There are a lot of Vishay Siliconix
IRFP244PBF applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRFP244PBF More Descriptions
Single N-Channel 250 V 0.28 Ohms Flange Mount Power Mosfet - TO-247AC
Power Field-Effect Transistor, 15A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:250V; Continuous Drain Current, Id:15A; On Resistance, Rds(on):280mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC ;RoHS Compliant: Yes
MOSFET, N TO-247AC 250V 15A; Transistor Type:MOSFET; Transistor Polarity:N; Current, Id Cont:15A; On State Resistance:0.28ohm; Case Style:TO-247AC; Current, Idm Pulse:60A; Junction to Case Thermal Resistance A:0.83°C/W; On state resistance @ Vgs = 10V:0.28ohm; Power Dissipation:150W; Power Dissipation Pd:150W; Voltage, Vds Max:250V
Product Comparison
The three parts on the right have similar specifications to IRFP244PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Surface Mount
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    Terminal Finish
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Radiation Hardening
    View Compare
  • IRFP244PBF
    IRFP244PBF
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    2008
    Active
    1 (Unlimited)
    280mOhm
    150°C
    -55°C
    250V
    MOSFET (Metal Oxide)
    15A
    1
    1
    150W Tc
    Single
    150W
    14 ns
    N-Channel
    280mOhm @ 9A, 10V
    4V @ 250μA
    1400pF @ 25V
    15A Tc
    63nC @ 10V
    49ns
    250V
    10V
    ±20V
    24 ns
    42 ns
    15A
    4V
    20V
    250V
    1.4nF
    280mOhm
    280 mΩ
    4 V
    20.7mm
    15.87mm
    5.31mm
    Unknown
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFP150
    -
    -
    Through Hole
    TO-247-3
    -
    -
    -
    -55°C~175°C TJ
    Tube
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    1
    -
    230W Tc
    -
    -
    -
    N-Channel
    55m Ω @ 25A, 10V
    4V @ 250μA
    2.8pF @ 25V
    41A Tc
    140nC @ 10V
    -
    100V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    NO
    SILICON
    e0
    no
    3
    TIN LEAD
    SINGLE
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    R-PSFM-T3
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    40A
    0.055Ohm
    160A
    100V
    -
  • IRFP350LC
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    -
    150°C
    -55°C
    -
    MOSFET (Metal Oxide)
    -
    1
    1
    190W Tc
    Single
    190W
    14 ns
    N-Channel
    300mOhm @ 9.6A, 10V
    4V @ 250μA
    2200pF @ 25V
    16A Tc
    76nC @ 10V
    54ns
    400V
    10V
    ±30V
    35 ns
    33 ns
    16A
    4V
    30V
    400V
    2.2nF
    300mOhm
    300 mΩ
    4 V
    20.7mm
    15.87mm
    5.31mm
    Unknown
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    No
  • IRFP350
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    2015
    Obsolete
    1 (Unlimited)
    -
    150°C
    -55°C
    400V
    MOSFET (Metal Oxide)
    16A
    -
    1
    190W Tc
    Single
    190W
    16 ns
    N-Channel
    300mOhm @ 9.6A, 10V
    4V @ 250μA
    2600pF @ 25V
    16A Tc
    150nC @ 10V
    49ns
    400V
    10V
    ±20V
    47 ns
    87 ns
    16A
    -
    20V
    400V
    2.6nF
    300mOhm
    300 mΩ
    -
    20.7mm
    15.87mm
    5.31mm
    -
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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