IRFP240PBF

Vishay Siliconix IRFP240PBF

Part Number:
IRFP240PBF
Manufacturer:
Vishay Siliconix
Ventron No:
2484668-IRFP240PBF
Description:
MOSFET N-CH 200V 20A TO-247AC
ECAD Model:
Datasheet:
IRFP240PBF

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Specifications
Vishay Siliconix IRFP240PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFP240PBF.
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-247-3
  • Weight
    38.000013g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2008
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Termination
    Through Hole
  • Resistance
    180mOhm
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    200V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    20A
  • Lead Pitch
    5.45mm
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    150W Tc
  • Element Configuration
    Single
  • Power Dissipation
    150W
  • Turn On Delay Time
    14 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    180mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1300pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    20A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    70nC @ 10V
  • Rise Time
    51ns
  • Drain to Source Voltage (Vdss)
    200V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    36 ns
  • Turn-Off Delay Time
    45 ns
  • Continuous Drain Current (ID)
    20A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    200V
  • Dual Supply Voltage
    200V
  • Input Capacitance
    1.3nF
  • Recovery Time
    610 ns
  • Max Junction Temperature (Tj)
    150°C
  • Drain to Source Resistance
    180mOhm
  • Rds On Max
    180 mΩ
  • Nominal Vgs
    4 V
  • Height
    25.11mm
  • Length
    15.87mm
  • Width
    5.31mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFP240PBF Overview
A device's maximum input capacitance is 1300pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 20A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 45 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 180mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IRFP240PBF Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 45 ns
single MOSFETs transistor is 180mOhm
a threshold voltage of 4V
a 200V drain to source voltage (Vdss)


IRFP240PBF Applications
There are a lot of Vishay Siliconix
IRFP240PBF applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRFP240PBF More Descriptions
Single N-Channel 200 V 0.18 Ohms Flange Mount Power Mosfet - TO-247AC
Power Field-Effect Transistor, 20A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N, 200V, 20A, TO-247AC; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:20A; Resistance, Rds On:0.18ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247AC; Termination Type:Through Hole; Current, Idm Pulse:80A; Lead Spacing:5.45mm; No. of Pins:3; Power Dissipation:150W; Power, Pd:150W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:0.83°C/W; Transistors, No. of:1; Voltage, Vds Max:200V
Product Comparison
The three parts on the right have similar specifications to IRFP240PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Termination
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Lead Pitch
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Input Capacitance
    Recovery Time
    Max Junction Temperature (Tj)
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Vgs(th) (Max) @ Id:
    Technology:
    Supplier Device Package:
    Series:
    Rds On (Max) @ Id, Vgs:
    Power Dissipation (Max):
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Input Capacitance (Ciss) (Max) @ Vds:
    Gate Charge (Qg) (Max) @ Vgs:
    FET Type:
    FET Feature:
    Drain to Source Voltage (Vdss):
    Current - Continuous Drain (Id) @ 25°C:
    View Compare
  • IRFP240PBF
    IRFP240PBF
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    2008
    Active
    1 (Unlimited)
    Through Hole
    180mOhm
    150°C
    -55°C
    200V
    MOSFET (Metal Oxide)
    20A
    5.45mm
    1
    1
    150W Tc
    Single
    150W
    14 ns
    N-Channel
    180mOhm @ 12A, 10V
    4V @ 250μA
    1300pF @ 25V
    20A Tc
    70nC @ 10V
    51ns
    200V
    10V
    ±20V
    36 ns
    45 ns
    20A
    4V
    20V
    200V
    200V
    1.3nF
    610 ns
    150°C
    180mOhm
    180 mΩ
    4 V
    25.11mm
    15.87mm
    5.31mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFP450
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    4V @ 250µA
    MOSFET (Metal Oxide)
    TO-247-3
    -
    400 mOhm @ 8.4A, 10V
    190W (Tc)
    Tube
    TO-247-3
    -55°C ~ 150°C (TJ)
    Through Hole
    2600pF @ 25V
    150nC @ 10V
    N-Channel
    -
    500V
    14A (Tc)
  • IRFP344PBF
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    1997
    Obsolete
    1 (Unlimited)
    -
    -
    150°C
    -55°C
    450V
    MOSFET (Metal Oxide)
    9.5A
    -
    -
    1
    150W Tc
    Single
    150W
    8.7 ns
    N-Channel
    630mOhm @ 5.7A, 10V
    4V @ 250μA
    1400pF @ 25V
    9.5A Tc
    80nC @ 10V
    28ns
    450V
    10V
    ±20V
    27 ns
    58 ns
    9.5A
    4V
    20V
    450V
    -
    1.4nF
    -
    -
    630mOhm
    630 mΩ
    -
    20.7mm
    15.87mm
    5.31mm
    Unknown
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFP350
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    2015
    Obsolete
    1 (Unlimited)
    -
    -
    150°C
    -55°C
    400V
    MOSFET (Metal Oxide)
    16A
    -
    -
    1
    190W Tc
    Single
    190W
    16 ns
    N-Channel
    300mOhm @ 9.6A, 10V
    4V @ 250μA
    2600pF @ 25V
    16A Tc
    150nC @ 10V
    49ns
    400V
    10V
    ±20V
    47 ns
    87 ns
    16A
    -
    20V
    400V
    -
    2.6nF
    -
    -
    300mOhm
    300 mΩ
    -
    20.7mm
    15.87mm
    5.31mm
    -
    -
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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