IRFP1405PBF

Infineon Technologies IRFP1405PBF

Part Number:
IRFP1405PBF
Manufacturer:
Infineon Technologies
Ventron No:
2479381-IRFP1405PBF
Description:
MOSFET N-CH 55V 95A TO-247AC
ECAD Model:
Datasheet:
IRFP1405PBF

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Specifications
Infineon Technologies IRFP1405PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFP1405PBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2003
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    5.3Ohm
  • Additional Feature
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    55V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    95A
  • Number of Elements
    1
  • Power Dissipation-Max
    310W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    310W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    12 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    5.3m Ω @ 95A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    5600pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    95A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    180nC @ 10V
  • Rise Time
    160ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    150 ns
  • Turn-Off Delay Time
    140 ns
  • Continuous Drain Current (ID)
    95A
  • Threshold Voltage
    4V
  • JEDEC-95 Code
    TO-247AC
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    55V
  • Pulsed Drain Current-Max (IDM)
    640A
  • Dual Supply Voltage
    55V
  • Nominal Vgs
    4 V
  • Height
    20.7mm
  • Length
    15.87mm
  • Width
    5.3086mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFP1405PBF Overview
A device's maximum input capacitance is 5600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 95A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=55V, and this device has a drain-to-source breakdown voltage of 55V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 140 ns.Its maximum pulsed drain current is 640A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.This device uses no drive voltage (10V) to reduce its overall power consumption.

IRFP1405PBF Features
a continuous drain current (ID) of 95A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 140 ns
based on its rated peak drain current 640A.
a threshold voltage of 4V


IRFP1405PBF Applications
There are a lot of Infineon Technologies
IRFP1405PBF applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRFP1405PBF More Descriptions
Single N-Channel 55 V 5.3 mOhm 120 nC HEXFET® Power Mosfet - TO-247-3AC
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHSInfineon SCT
Power Field-Effect Transistor, 95A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 55V, 160A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:160A; Drain Source Voltage Vds:55V; On Resistance Rds(on):5.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:310W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:95A; Junction to Case Thermal Resistance A:0.49°C/W; On State resistance @ Vgs = 10V:5.3ohm; Package / Case:TO-247AC; Power Dissipation Pd:310W; Power Dissipation Pd:310W; Pulse Current Idm:640A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 95 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 5.3 / Gate-Source Voltage V = 20 / Fall Time ns = 150 / Rise Time ns = 160 / Turn-OFF Delay Time ns = 140 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 310
Product Comparison
The three parts on the right have similar specifications to IRFP1405PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Vgs(th) (Max) @ Id:
    Technology:
    Supplier Device Package:
    Series:
    Rds On (Max) @ Id, Vgs:
    Power Dissipation (Max):
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Input Capacitance (Ciss) (Max) @ Vds:
    Gate Charge (Qg) (Max) @ Vgs:
    FET Type:
    FET Feature:
    Drain to Source Voltage (Vdss):
    Current - Continuous Drain (Id) @ 25°C:
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Drain to Source Voltage (Vdss)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Weight
    Number of Channels
    View Compare
  • IRFP1405PBF
    IRFP1405PBF
    12 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2003
    Active
    1 (Unlimited)
    3
    EAR99
    5.3Ohm
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
    FET General Purpose Power
    55V
    MOSFET (Metal Oxide)
    95A
    1
    310W Tc
    Single
    ENHANCEMENT MODE
    310W
    DRAIN
    12 ns
    N-Channel
    SWITCHING
    5.3m Ω @ 95A, 10V
    4V @ 250μA
    5600pF @ 25V
    95A Tc
    180nC @ 10V
    160ns
    10V
    ±20V
    150 ns
    140 ns
    95A
    4V
    TO-247AC
    20V
    55V
    640A
    55V
    4 V
    20.7mm
    15.87mm
    5.3086mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFP450
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    4V @ 250µA
    MOSFET (Metal Oxide)
    TO-247-3
    -
    400 mOhm @ 8.4A, 10V
    190W (Tc)
    Tube
    TO-247-3
    -55°C ~ 150°C (TJ)
    Through Hole
    2600pF @ 25V
    150nC @ 10V
    N-Channel
    -
    500V
    14A (Tc)
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFP064VPBF
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    -55°C~175°C TJ
    Bulk
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    60V
    MOSFET (Metal Oxide)
    130A
    1
    250W Tc
    Single
    -
    250W
    -
    26 ns
    N-Channel
    -
    5.5mOhm @ 78A, 10V
    4V @ 250μA
    6760pF @ 25V
    130A Tc
    260nC @ 10V
    200ns
    10V
    ±20V
    150 ns
    100 ns
    130A
    -
    -
    20V
    60V
    -
    -
    4 V
    -
    -
    -
    No SVHC
    No
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    TO-247AC
    175°C
    -55°C
    60V
    6.76nF
    5.5mOhm
    5.5 mΩ
    -
    -
  • IRFP344PBF
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    -55°C~150°C TJ
    Tube
    -
    1997
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    450V
    MOSFET (Metal Oxide)
    9.5A
    -
    150W Tc
    Single
    -
    150W
    -
    8.7 ns
    N-Channel
    -
    630mOhm @ 5.7A, 10V
    4V @ 250μA
    1400pF @ 25V
    9.5A Tc
    80nC @ 10V
    28ns
    10V
    ±20V
    27 ns
    58 ns
    9.5A
    4V
    -
    20V
    450V
    -
    -
    -
    20.7mm
    15.87mm
    5.31mm
    Unknown
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    TO-247-3
    150°C
    -55°C
    450V
    1.4nF
    630mOhm
    630 mΩ
    38.000013g
    1
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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