Infineon Technologies IRFP1405PBF
- Part Number:
- IRFP1405PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2479381-IRFP1405PBF
- Description:
- MOSFET N-CH 55V 95A TO-247AC
- Datasheet:
- IRFP1405PBF
Infineon Technologies IRFP1405PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFP1405PBF.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2003
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance5.3Ohm
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- SubcategoryFET General Purpose Power
- Voltage - Rated DC55V
- TechnologyMOSFET (Metal Oxide)
- Current Rating95A
- Number of Elements1
- Power Dissipation-Max310W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation310W
- Case ConnectionDRAIN
- Turn On Delay Time12 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs5.3m Ω @ 95A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds5600pF @ 25V
- Current - Continuous Drain (Id) @ 25°C95A Tc
- Gate Charge (Qg) (Max) @ Vgs180nC @ 10V
- Rise Time160ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)150 ns
- Turn-Off Delay Time140 ns
- Continuous Drain Current (ID)95A
- Threshold Voltage4V
- JEDEC-95 CodeTO-247AC
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage55V
- Pulsed Drain Current-Max (IDM)640A
- Dual Supply Voltage55V
- Nominal Vgs4 V
- Height20.7mm
- Length15.87mm
- Width5.3086mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFP1405PBF Overview
A device's maximum input capacitance is 5600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 95A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=55V, and this device has a drain-to-source breakdown voltage of 55V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 140 ns.Its maximum pulsed drain current is 640A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFP1405PBF Features
a continuous drain current (ID) of 95A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 140 ns
based on its rated peak drain current 640A.
a threshold voltage of 4V
IRFP1405PBF Applications
There are a lot of Infineon Technologies
IRFP1405PBF applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 5600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 95A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=55V, and this device has a drain-to-source breakdown voltage of 55V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 140 ns.Its maximum pulsed drain current is 640A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFP1405PBF Features
a continuous drain current (ID) of 95A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 140 ns
based on its rated peak drain current 640A.
a threshold voltage of 4V
IRFP1405PBF Applications
There are a lot of Infineon Technologies
IRFP1405PBF applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRFP1405PBF More Descriptions
Single N-Channel 55 V 5.3 mOhm 120 nC HEXFET® Power Mosfet - TO-247-3AC
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHSInfineon SCT
Power Field-Effect Transistor, 95A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 55V, 160A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:160A; Drain Source Voltage Vds:55V; On Resistance Rds(on):5.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:310W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:95A; Junction to Case Thermal Resistance A:0.49°C/W; On State resistance @ Vgs = 10V:5.3ohm; Package / Case:TO-247AC; Power Dissipation Pd:310W; Power Dissipation Pd:310W; Pulse Current Idm:640A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 95 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 5.3 / Gate-Source Voltage V = 20 / Fall Time ns = 150 / Rise Time ns = 160 / Turn-OFF Delay Time ns = 140 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 310
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHSInfineon SCT
Power Field-Effect Transistor, 95A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 55V, 160A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:160A; Drain Source Voltage Vds:55V; On Resistance Rds(on):5.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:310W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:95A; Junction to Case Thermal Resistance A:0.49°C/W; On State resistance @ Vgs = 10V:5.3ohm; Package / Case:TO-247AC; Power Dissipation Pd:310W; Power Dissipation Pd:310W; Pulse Current Idm:640A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 95 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 5.3 / Gate-Source Voltage V = 20 / Fall Time ns = 150 / Rise Time ns = 160 / Turn-OFF Delay Time ns = 140 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 310
The three parts on the right have similar specifications to IRFP1405PBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceAdditional FeatureSubcategoryVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeVgs(th) (Max) @ Id:Technology:Supplier Device Package:Series:Rds On (Max) @ Id, Vgs:Power Dissipation (Max):Packaging:Package / Case:Operating Temperature:Mounting Type:Input Capacitance (Ciss) (Max) @ Vds:Gate Charge (Qg) (Max) @ Vgs:FET Type:FET Feature:Drain to Source Voltage (Vdss):Current - Continuous Drain (Id) @ 25°C:Supplier Device PackageMax Operating TemperatureMin Operating TemperatureDrain to Source Voltage (Vdss)Input CapacitanceDrain to Source ResistanceRds On MaxWeightNumber of ChannelsView Compare
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IRFP1405PBF12 WeeksThrough HoleThrough HoleTO-247-33SILICON-55°C~175°C TJTubeHEXFET®2003Active1 (Unlimited)3EAR995.3OhmAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCEFET General Purpose Power55VMOSFET (Metal Oxide)95A1310W TcSingleENHANCEMENT MODE310WDRAIN12 nsN-ChannelSWITCHING5.3m Ω @ 95A, 10V4V @ 250μA5600pF @ 25V95A Tc180nC @ 10V160ns10V±20V150 ns140 ns95A4VTO-247AC20V55V640A55V4 V20.7mm15.87mm5.3086mmNo SVHCNoROHS3 CompliantLead Free--------------------------
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------------------------------------------------------4V @ 250µAMOSFET (Metal Oxide)TO-247-3-400 mOhm @ 8.4A, 10V190W (Tc)TubeTO-247-3-55°C ~ 150°C (TJ)Through Hole2600pF @ 25V150nC @ 10VN-Channel-500V14A (Tc)---------
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-Through HoleThrough HoleTO-247-33--55°C~175°C TJBulkHEXFET®2004Obsolete1 (Unlimited)-----60VMOSFET (Metal Oxide)130A1250W TcSingle-250W-26 nsN-Channel-5.5mOhm @ 78A, 10V4V @ 250μA6760pF @ 25V130A Tc260nC @ 10V200ns10V±20V150 ns100 ns130A--20V60V--4 V---No SVHCNoRoHS CompliantLead Free----------------TO-247AC175°C-55°C60V6.76nF5.5mOhm5.5 mΩ--
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-Through HoleThrough HoleTO-247-33--55°C~150°C TJTube-1997Obsolete1 (Unlimited)-----450VMOSFET (Metal Oxide)9.5A-150W TcSingle-150W-8.7 nsN-Channel-630mOhm @ 5.7A, 10V4V @ 250μA1400pF @ 25V9.5A Tc80nC @ 10V28ns10V±20V27 ns58 ns9.5A4V-20V450V---20.7mm15.87mm5.31mmUnknown-ROHS3 CompliantLead Free----------------TO-247-3150°C-55°C450V1.4nF630mOhm630 mΩ38.000013g1
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