Infineon Technologies IRFP054NPBF
- Part Number:
- IRFP054NPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2483365-IRFP054NPBF
- Description:
- MOSFET N-CH 55V 81A TO-247AC
- Datasheet:
- IRFP054NPBF
Infineon Technologies IRFP054NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFP054NPBF.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingBulk
- SeriesHEXFET®
- Published1997
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance12mOhm
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY
- SubcategoryFET General Purpose Power
- Voltage - Rated DC55V
- TechnologyMOSFET (Metal Oxide)
- Current Rating72A
- Lead Pitch5.45mm
- Number of Elements1
- Power Dissipation-Max170W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation130W
- Case ConnectionDRAIN
- Turn On Delay Time11 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs12m Ω @ 43A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2900pF @ 25V
- Current - Continuous Drain (Id) @ 25°C81A Tc
- Gate Charge (Qg) (Max) @ Vgs130nC @ 10V
- Rise Time66ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)46 ns
- Turn-Off Delay Time40 ns
- Continuous Drain Current (ID)81A
- Threshold Voltage4V
- JEDEC-95 CodeTO-247AC
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage55V
- Pulsed Drain Current-Max (IDM)290A
- Dual Supply Voltage55V
- Recovery Time120 ns
- Nominal Vgs4 V
- Height20.7mm
- Length15.87mm
- Width5.3086mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead, Lead Free
IRFP054NPBF Description
IRFP054NPBF MOSFET is a type of Power MOSFET that is optimized for high current capability. MOSFET IRFP054NPBF is ideal for low-frequency applications requiring performance and ruggedness. IRFP054NPBF Infineon Technologies is general use and is suitable for DC motors, battery management systems, inverters, and DC-DC converters.
IRFP054NPBF Features
High current carrying capability
Product qualification
Wide availability
High-current rating
Broadest availability
IRFP054NPBF Applications
Battery-powered applications
Power tools
DC motor drives
Light Electric Vehicles
SMPS
IRFP054NPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.012Ohm;ID 81A;TO-247AC;PD 170W;VGS /-20V
Transistor NPN Field Effect IRFP054/IRFP054N INTERNATIONAL RECTIFIER Ampere=70 V=60 TO3P
Single N-Channel 55 V 0.012 Ohm 130 nC HEXFET® Power Mosfet - TO-247AC
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHSInfineon SCT
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:72A; Drain Source Voltage Vds:55V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:130W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:81A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:130W; Power Dissipation Pd:130W; Pulse Current Idm:290A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Transistor NPN Field Effect IRFP054/IRFP054N INTERNATIONAL RECTIFIER Ampere=70 V=60 TO3P
Single N-Channel 55 V 0.012 Ohm 130 nC HEXFET® Power Mosfet - TO-247AC
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHSInfineon SCT
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:72A; Drain Source Voltage Vds:55V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:130W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:81A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:130W; Power Dissipation Pd:130W; Pulse Current Idm:290A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to IRFP054NPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceAdditional FeatureSubcategoryVoltage - Rated DCTechnologyCurrent RatingLead PitchNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageRecovery TimeNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeWeightJESD-609 CodePbfree CodeTerminal FinishPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ChannelsSupplier Device PackageMax Operating TemperatureMin Operating TemperatureDrain to Source Voltage (Vdss)Input CapacitanceDrain to Source ResistanceRds On MaxView Compare
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IRFP054NPBF12 WeeksThrough HoleThrough HoleTO-247-33SILICON-55°C~175°C TJBulkHEXFET®1997Active1 (Unlimited)3EAR9912mOhmAVALANCHE RATED, HIGH RELIABILITYFET General Purpose Power55VMOSFET (Metal Oxide)72A5.45mm1170W TcSingleENHANCEMENT MODE130WDRAIN11 nsN-ChannelSWITCHING12m Ω @ 43A, 10V4V @ 250μA2900pF @ 25V81A Tc130nC @ 10V66ns10V±20V46 ns40 ns81A4VTO-247AC20V55V290A55V120 ns4 V20.7mm15.87mm5.3086mmNo SVHCNoROHS3 CompliantContains Lead, Lead Free-----------------
-
-Through HoleThrough HoleTO-247-33SILICON-55°C~175°C TJTube-2016Obsolete1 (Unlimited)3EAR99---60VMOSFET (Metal Oxide)70A-1230W TcSingleENHANCEMENT MODE230WDRAIN20 nsN-ChannelSWITCHING14m Ω @ 54A, 10V4V @ 250μA4500pF @ 25V70A Tc160nC @ 10V160ns10V±20V150 ns83 ns70A--20V60V----20.7mm15.87mm5.31mm--Non-RoHS CompliantContains Lead38.000013ge0noTIN LEADNOT SPECIFIEDNOT SPECIFIED3Not Qualified1-------
-
-Through HoleThrough HoleTO-247-33--55°C~150°C TJTube-1997Obsolete1 (Unlimited)-----450VMOSFET (Metal Oxide)9.5A--150W TcSingle-150W-8.7 nsN-Channel-630mOhm @ 5.7A, 10V4V @ 250μA1400pF @ 25V9.5A Tc80nC @ 10V28ns10V±20V27 ns58 ns9.5A4V-20V450V----20.7mm15.87mm5.31mmUnknown-ROHS3 CompliantLead Free38.000013g-------1TO-247-3150°C-55°C450V1.4nF630mOhm630 mΩ
-
-Through HoleThrough HoleTO-247-3---55°C~150°C TJTube-2014Obsolete1 (Unlimited)-----500VMOSFET (Metal Oxide)32A--460W TcSingle---28 nsN-Channel-160mOhm @ 32A, 10V5V @ 250μA5280pF @ 25V32A Tc190nC @ 10V120ns10V±30V54 ns48 ns32A--30V500V----20.7mm15.87mm5.31mm-NoNon-RoHS CompliantContains Lead38.000013g-------1TO-247-3150°C-55°C500V5.28nF160mOhm160 mΩ
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