IRFP054NPBF

Infineon Technologies IRFP054NPBF

Part Number:
IRFP054NPBF
Manufacturer:
Infineon Technologies
Ventron No:
2483365-IRFP054NPBF
Description:
MOSFET N-CH 55V 81A TO-247AC
ECAD Model:
Datasheet:
IRFP054NPBF

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Specifications
Infineon Technologies IRFP054NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFP054NPBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Bulk
  • Series
    HEXFET®
  • Published
    1997
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    12mOhm
  • Additional Feature
    AVALANCHE RATED, HIGH RELIABILITY
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    55V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    72A
  • Lead Pitch
    5.45mm
  • Number of Elements
    1
  • Power Dissipation-Max
    170W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    130W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    11 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    12m Ω @ 43A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2900pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    81A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    130nC @ 10V
  • Rise Time
    66ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    46 ns
  • Turn-Off Delay Time
    40 ns
  • Continuous Drain Current (ID)
    81A
  • Threshold Voltage
    4V
  • JEDEC-95 Code
    TO-247AC
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    55V
  • Pulsed Drain Current-Max (IDM)
    290A
  • Dual Supply Voltage
    55V
  • Recovery Time
    120 ns
  • Nominal Vgs
    4 V
  • Height
    20.7mm
  • Length
    15.87mm
  • Width
    5.3086mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead, Lead Free
Description
IRFP054NPBF Description   IRFP054NPBF MOSFET is a type of Power MOSFET that is optimized for high current capability. MOSFET IRFP054NPBF is ideal for low-frequency applications requiring performance and ruggedness. IRFP054NPBF Infineon Technologies is general use and is suitable for DC motors, battery management systems, inverters, and DC-DC converters.     IRFP054NPBF Features   High current carrying capability Product qualification Wide availability High-current rating Broadest availability     IRFP054NPBF Applications   Battery-powered applications Power tools DC motor drives Light Electric Vehicles SMPS
IRFP054NPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.012Ohm;ID 81A;TO-247AC;PD 170W;VGS /-20V
Transistor NPN Field Effect IRFP054/IRFP054N INTERNATIONAL RECTIFIER Ampere=70 V=60 TO3P
Single N-Channel 55 V 0.012 Ohm 130 nC HEXFET® Power Mosfet - TO-247AC
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHSInfineon SCT
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:72A; Drain Source Voltage Vds:55V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:130W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:81A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:130W; Power Dissipation Pd:130W; Pulse Current Idm:290A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to IRFP054NPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Current Rating
    Lead Pitch
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Recovery Time
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Weight
    JESD-609 Code
    Pbfree Code
    Terminal Finish
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Channels
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Drain to Source Voltage (Vdss)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    View Compare
  • IRFP054NPBF
    IRFP054NPBF
    12 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~175°C TJ
    Bulk
    HEXFET®
    1997
    Active
    1 (Unlimited)
    3
    EAR99
    12mOhm
    AVALANCHE RATED, HIGH RELIABILITY
    FET General Purpose Power
    55V
    MOSFET (Metal Oxide)
    72A
    5.45mm
    1
    170W Tc
    Single
    ENHANCEMENT MODE
    130W
    DRAIN
    11 ns
    N-Channel
    SWITCHING
    12m Ω @ 43A, 10V
    4V @ 250μA
    2900pF @ 25V
    81A Tc
    130nC @ 10V
    66ns
    10V
    ±20V
    46 ns
    40 ns
    81A
    4V
    TO-247AC
    20V
    55V
    290A
    55V
    120 ns
    4 V
    20.7mm
    15.87mm
    5.3086mm
    No SVHC
    No
    ROHS3 Compliant
    Contains Lead, Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFP054
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    -
    2016
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    -
    -
    60V
    MOSFET (Metal Oxide)
    70A
    -
    1
    230W Tc
    Single
    ENHANCEMENT MODE
    230W
    DRAIN
    20 ns
    N-Channel
    SWITCHING
    14m Ω @ 54A, 10V
    4V @ 250μA
    4500pF @ 25V
    70A Tc
    160nC @ 10V
    160ns
    10V
    ±20V
    150 ns
    83 ns
    70A
    -
    -
    20V
    60V
    -
    -
    -
    -
    20.7mm
    15.87mm
    5.31mm
    -
    -
    Non-RoHS Compliant
    Contains Lead
    38.000013g
    e0
    no
    TIN LEAD
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    1
    -
    -
    -
    -
    -
    -
    -
  • IRFP344PBF
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    -55°C~150°C TJ
    Tube
    -
    1997
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    450V
    MOSFET (Metal Oxide)
    9.5A
    -
    -
    150W Tc
    Single
    -
    150W
    -
    8.7 ns
    N-Channel
    -
    630mOhm @ 5.7A, 10V
    4V @ 250μA
    1400pF @ 25V
    9.5A Tc
    80nC @ 10V
    28ns
    10V
    ±20V
    27 ns
    58 ns
    9.5A
    4V
    -
    20V
    450V
    -
    -
    -
    -
    20.7mm
    15.87mm
    5.31mm
    Unknown
    -
    ROHS3 Compliant
    Lead Free
    38.000013g
    -
    -
    -
    -
    -
    -
    -
    1
    TO-247-3
    150°C
    -55°C
    450V
    1.4nF
    630mOhm
    630 mΩ
  • IRFP32N50K
    -
    Through Hole
    Through Hole
    TO-247-3
    -
    -
    -55°C~150°C TJ
    Tube
    -
    2014
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    500V
    MOSFET (Metal Oxide)
    32A
    -
    -
    460W Tc
    Single
    -
    -
    -
    28 ns
    N-Channel
    -
    160mOhm @ 32A, 10V
    5V @ 250μA
    5280pF @ 25V
    32A Tc
    190nC @ 10V
    120ns
    10V
    ±30V
    54 ns
    48 ns
    32A
    -
    -
    30V
    500V
    -
    -
    -
    -
    20.7mm
    15.87mm
    5.31mm
    -
    No
    Non-RoHS Compliant
    Contains Lead
    38.000013g
    -
    -
    -
    -
    -
    -
    -
    1
    TO-247-3
    150°C
    -55°C
    500V
    5.28nF
    160mOhm
    160 mΩ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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