Infineon Technologies IRFP054N
- Part Number:
- IRFP054N
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2492384-IRFP054N
- Description:
- MOSFET N-CH 55V 81A TO-247AC
- Datasheet:
- IRFP054N
Infineon Technologies IRFP054N technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFP054N.
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingBulk
- SeriesHEXFET®
- Published1997
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Additional FeatureAVALANCHE RATED, FAST SWITCHING
- HTS Code8541.29.00.95
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max170W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs12m Ω @ 43A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2900pF @ 25V
- Current - Continuous Drain (Id) @ 25°C81A Tc
- Gate Charge (Qg) (Max) @ Vgs130nC @ 10V
- Drain to Source Voltage (Vdss)55V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- JEDEC-95 CodeTO-247AC
- Drain Current-Max (Abs) (ID)81A
- Drain-source On Resistance-Max0.012Ohm
- Pulsed Drain Current-Max (IDM)290A
- DS Breakdown Voltage-Min55V
- Avalanche Energy Rating (Eas)360 mJ
- RoHS StatusNon-RoHS Compliant
IRFP054N Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-21 8 package because of its isolated mounting
IRFP054N Features Advanced Process Technology Dynamic dvldt Rating 175??C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free
IRFP054N Features Advanced Process Technology Dynamic dvldt Rating 175??C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free
The three parts on the right have similar specifications to IRFP054N.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureHTS CodeTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusMountNumber of PinsSupplier Device PackageWeightMax Operating TemperatureMin Operating TemperatureNumber of ChannelsElement ConfigurationPower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningVoltage - Rated DCCurrent RatingLead FreeView Compare
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IRFP054NThrough HoleTO-247-3NOSILICON-55°C~175°C TJBulkHEXFET®1997Obsolete1 (Unlimited)3EAR99AVALANCHE RATED, FAST SWITCHING8541.29.00.95MOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIEDR-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODE170W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING12m Ω @ 43A, 10V4V @ 250μA2900pF @ 25V81A Tc130nC @ 10V55V10V±20VTO-247AC81A0.012Ohm290A55V360 mJNon-RoHS Compliant------------------------------
-
Through HoleTO-247-3---55°C~150°C TJTube-2016Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-----1-190W Tc--N-Channel-300mOhm @ 9.6A, 10V4V @ 250μA2200pF @ 25V16A Tc76nC @ 10V400V10V±30V------Non-RoHS CompliantThrough Hole3TO-247-338.000013g150°C-55°C1Single190W14 ns54ns35 ns33 ns16A4V30V400V2.2nF300mOhm300 mΩ4 V20.7mm15.87mm5.31mmUnknownNo---
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Through HoleTO-3P-3, SC-65-3---55°C~150°C TJTube-2001Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-------205W Tc--N-Channel-390mOhm @ 7A, 10V4V @ 250μA3800pF @ 25V14A Tc113nC @ 10V500V10V±30V---------TO-3P--------------------------
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Through HoleTO-247-3---55°C~150°C TJTube-1997Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-------150W Tc--N-Channel-630mOhm @ 5.7A, 10V4V @ 250μA1400pF @ 25V9.5A Tc80nC @ 10V450V10V±20V------ROHS3 CompliantThrough Hole3TO-247-338.000013g150°C-55°C1Single150W8.7 ns28ns27 ns58 ns9.5A4V20V450V1.4nF630mOhm630 mΩ-20.7mm15.87mm5.31mmUnknown-450V9.5ALead Free
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