IRFP054N

Infineon Technologies IRFP054N

Part Number:
IRFP054N
Manufacturer:
Infineon Technologies
Ventron No:
2492384-IRFP054N
Description:
MOSFET N-CH 55V 81A TO-247AC
ECAD Model:
Datasheet:
IRFP054N

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Infineon Technologies IRFP054N technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFP054N.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Bulk
  • Series
    HEXFET®
  • Published
    1997
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Additional Feature
    AVALANCHE RATED, FAST SWITCHING
  • HTS Code
    8541.29.00.95
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    170W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    12m Ω @ 43A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2900pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    81A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    130nC @ 10V
  • Drain to Source Voltage (Vdss)
    55V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • JEDEC-95 Code
    TO-247AC
  • Drain Current-Max (Abs) (ID)
    81A
  • Drain-source On Resistance-Max
    0.012Ohm
  • Pulsed Drain Current-Max (IDM)
    290A
  • DS Breakdown Voltage-Min
    55V
  • Avalanche Energy Rating (Eas)
    360 mJ
  • RoHS Status
    Non-RoHS Compliant
Description
IRFP054N Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-21 8 package because of its isolated mounting

IRFP054N Features Advanced Process Technology Dynamic dvldt Rating 175??C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free

Product Comparison
The three parts on the right have similar specifications to IRFP054N.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    HTS Code
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    Mount
    Number of Pins
    Supplier Device Package
    Weight
    Max Operating Temperature
    Min Operating Temperature
    Number of Channels
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Voltage - Rated DC
    Current Rating
    Lead Free
    View Compare
  • IRFP054N
    IRFP054N
    Through Hole
    TO-247-3
    NO
    SILICON
    -55°C~175°C TJ
    Bulk
    HEXFET®
    1997
    Obsolete
    1 (Unlimited)
    3
    EAR99
    AVALANCHE RATED, FAST SWITCHING
    8541.29.00.95
    MOSFET (Metal Oxide)
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSFM-T3
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    170W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    12m Ω @ 43A, 10V
    4V @ 250μA
    2900pF @ 25V
    81A Tc
    130nC @ 10V
    55V
    10V
    ±20V
    TO-247AC
    81A
    0.012Ohm
    290A
    55V
    360 mJ
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFP350LC
    Through Hole
    TO-247-3
    -
    -
    -55°C~150°C TJ
    Tube
    -
    2016
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    1
    -
    190W Tc
    -
    -
    N-Channel
    -
    300mOhm @ 9.6A, 10V
    4V @ 250μA
    2200pF @ 25V
    16A Tc
    76nC @ 10V
    400V
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Through Hole
    3
    TO-247-3
    38.000013g
    150°C
    -55°C
    1
    Single
    190W
    14 ns
    54ns
    35 ns
    33 ns
    16A
    4V
    30V
    400V
    2.2nF
    300mOhm
    300 mΩ
    4 V
    20.7mm
    15.87mm
    5.31mm
    Unknown
    No
    -
    -
    -
  • IRFP450B
    Through Hole
    TO-3P-3, SC-65-3
    -
    -
    -55°C~150°C TJ
    Tube
    -
    2001
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    205W Tc
    -
    -
    N-Channel
    -
    390mOhm @ 7A, 10V
    4V @ 250μA
    3800pF @ 25V
    14A Tc
    113nC @ 10V
    500V
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    TO-3P
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFP344PBF
    Through Hole
    TO-247-3
    -
    -
    -55°C~150°C TJ
    Tube
    -
    1997
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    150W Tc
    -
    -
    N-Channel
    -
    630mOhm @ 5.7A, 10V
    4V @ 250μA
    1400pF @ 25V
    9.5A Tc
    80nC @ 10V
    450V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Through Hole
    3
    TO-247-3
    38.000013g
    150°C
    -55°C
    1
    Single
    150W
    8.7 ns
    28ns
    27 ns
    58 ns
    9.5A
    4V
    20V
    450V
    1.4nF
    630mOhm
    630 mΩ
    -
    20.7mm
    15.87mm
    5.31mm
    Unknown
    -
    450V
    9.5A
    Lead Free
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.