Infineon Technologies IRFHS8342TRPBF
- Part Number:
- IRFHS8342TRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3070327-IRFHS8342TRPBF
- Description:
- MOSFET N-CH 30V 8.8A PQFN
- ECAD Model:
-
- Datasheet:
- IRFHS8342TRPBF
Infineon Technologies IRFHS8342TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFHS8342TRPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-PowerVDFN
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2010
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Resistance16MOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max2.1W Ta
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.1W
- Case ConnectionDRAIN
- Turn On Delay Time5.9 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs16m Ω @ 8.5A, 10V
- Vgs(th) (Max) @ Id2.35V @ 25μA
- Input Capacitance (Ciss) (Max) @ Vds600pF @ 25V
- Current - Continuous Drain (Id) @ 25°C8.8A Ta 19A Tc
- Gate Charge (Qg) (Max) @ Vgs8.7nC @ 10V
- Rise Time15ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)5 ns
- Turn-Off Delay Time5.2 ns
- Continuous Drain Current (ID)8.8A
- Threshold Voltage1.8V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)8.5A
- Drain to Source Breakdown Voltage30V
- Nominal Vgs1.8 V
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFHS8342TRPBF Description
IRFHS8342TRPBF is an N-channel HEXFET? Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 30V. The operating temperature of the IRFHS8342TRPBF is -55??C~150??C TJ and its maximum power dissipation is 2.1W Ta. IRFHS8342TRPBF has 6 pins and it is available in Tape & Reel (TR) packaging way. The Drain to Source Breakdown Voltage of IRFHS8342TRPBF is 30V.
IRFHS8342TRPBF Features
Continuous Drain Current (ID): 8.8A
Gate to Source Voltage (Vgs): 20V
Drain to Source Breakdown Voltage: 30V
Threshold Voltage: 1.8V
IRFHS8342TRPBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IRFHS8342TRPBF is an N-channel HEXFET? Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 30V. The operating temperature of the IRFHS8342TRPBF is -55??C~150??C TJ and its maximum power dissipation is 2.1W Ta. IRFHS8342TRPBF has 6 pins and it is available in Tape & Reel (TR) packaging way. The Drain to Source Breakdown Voltage of IRFHS8342TRPBF is 30V.
IRFHS8342TRPBF Features
Continuous Drain Current (ID): 8.8A
Gate to Source Voltage (Vgs): 20V
Drain to Source Breakdown Voltage: 30V
Threshold Voltage: 1.8V
IRFHS8342TRPBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IRFHS8342TRPBF More Descriptions
INFINEON IRFHS8342TRPBF MOSFET Transistor, N Channel, 8.8 A, 30 V, 0.013 ohm, 10 V, 1.8 VNew
Single N-Channel 30 V 16 mOhm 4.2 nC HEXFET® Power Mosfet - PQFN 2 x 2 mm
30V Single N-Channel HEXFET Power MOSFET in a 2mm X 2mm PQFN package, PG-TSDSON-6, RoHSInfineon SCT
Power MOSFET, N Channel, 30 V, 19 A, 16 Milliohms, PQFN, 6 Pins, Surface Mount
Trans MOSFET N-CH 30V 8.8A 6-Pin PQFN EP T/R
MOSFET Operating temperature: -55...150 °C Housing type: PQFN-6 (2x2) Polarity: N Variants: Enhancement mode Power dissipation: 2.1 W
N CH MOSFET, 30V, 8.8A, 6-PQFN; Transist; N CH MOSFET, 30V, 8.8A, 6-PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:8.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):13mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; No. of Pins:6
Benefits: RoHS Compliant; Low RDS(on); Low Profile (less than 1.0 mm); Compatible with Existing Surface Mount Techniques; Low Junction to PCB Thermal Resistance; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; DC Switches; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
Single N-Channel 30 V 16 mOhm 4.2 nC HEXFET® Power Mosfet - PQFN 2 x 2 mm
30V Single N-Channel HEXFET Power MOSFET in a 2mm X 2mm PQFN package, PG-TSDSON-6, RoHSInfineon SCT
Power MOSFET, N Channel, 30 V, 19 A, 16 Milliohms, PQFN, 6 Pins, Surface Mount
Trans MOSFET N-CH 30V 8.8A 6-Pin PQFN EP T/R
MOSFET Operating temperature: -55...150 °C Housing type: PQFN-6 (2x2) Polarity: N Variants: Enhancement mode Power dissipation: 2.1 W
N CH MOSFET, 30V, 8.8A, 6-PQFN; Transist; N CH MOSFET, 30V, 8.8A, 6-PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:8.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):13mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; No. of Pins:6
Benefits: RoHS Compliant; Low RDS(on); Low Profile (less than 1.0 mm); Compatible with Existing Surface Mount Techniques; Low Junction to PCB Thermal Resistance; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; DC Switches; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
The three parts on the right have similar specifications to IRFHS8342TRPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal PositionNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageNominal VgsREACH SVHCRadiation HardeningRoHS StatusLead FreeAdditional FeatureJESD-30 CodePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)HeightLengthWidthContact PlatingSupplier Device PackageMax Operating TemperatureMin Operating TemperatureMax Power DissipationElement ConfigurationDrain to Source Voltage (Vdss)Input CapacitanceRecovery TimeDrain to Source ResistanceRds On MaxView Compare
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IRFHS8342TRPBF12 WeeksSurface MountSurface Mount6-PowerVDFN6SILICON-55°C~150°C TJTape & Reel (TR)HEXFET®2010e3Active1 (Unlimited)6EAR9916MOhmMatte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUAL1SINGLE WITH BUILT-IN DIODE2.1W TaENHANCEMENT MODE2.1WDRAIN5.9 nsN-ChannelSWITCHING16m Ω @ 8.5A, 10V2.35V @ 25μA600pF @ 25V8.8A Ta 19A Tc8.7nC @ 10V15ns4.5V 10V±20V5 ns5.2 ns8.8A1.8V20V8.5A30V1.8 VNo SVHCNoROHS3 CompliantLead Free------------------- -
-Surface MountSurface Mount8-PowerVDFN8SILICON-55°C~150°C TJTape & Reel (TR)HEXFET®2010-Obsolete1 (Unlimited)5EAR99--FET General Purpose PowerMOSFET (Metal Oxide)DUAL1SINGLE WITH BUILT-IN DIODE3.6W Ta 46W TcENHANCEMENT MODE3.6WDRAIN11 nsN-ChannelSWITCHING4.2m Ω @ 49A, 10V2.35V @ 50μA2190pF @ 15V23A Ta 82A Tc41nC @ 10V31ns4.5V 10V±20V6.1 ns8.8 ns23A-20V-30V--NoRoHS CompliantLead FreeHIGH RELIABILITYR-PDSO-N5330A46 mJ838.2μm5.9944mm5mm-----------
-
-Surface MountSurface Mount8-PowerVDFN8SILICON-55°C~150°C TJTape & Reel (TR)HEXFET®2009-Obsolete1 (Unlimited)5EAR998.1MOhm-FET General Purpose PowerMOSFET (Metal Oxide)DUAL1SINGLE WITH BUILT-IN DIODE3.6W Ta 26W TcENHANCEMENT MODE3.6WDRAIN9 nsN-ChannelSWITCHING8.1m Ω @ 15A, 10V2.35V @ 25μA1125pF @ 15V15A Ta 44A Tc12nC @ 4.5V26ns4.5V 10V±20V6.1 ns9.1 ns44A-20V-30V--NoRoHS CompliantLead FreeHIGH RELIABILITYR-PDSO-N560A46 mJ838.2μm5.9944mm5mmTin----------
-
-Surface MountSurface Mount8-PowerVDFN8--Cut Tape (CT)HEXFET®2010-Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)-1---104W-16 nsN-Channel-2.5mOhm @ 50A, 10V2.35V @ 100μA3635pF @ 25V29A Ta 100A Tc55nC @ 10V30ns--12 ns20 ns100A2.35V20V-30V2.35 VNo SVHCNoRoHS Compliant-----838.2μm5.9944mm5mm-PQFN (5x6) Single Die150°C-55°C3.6WSingle30V3.635nF29 ns2.5mOhm2.5 mΩ
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