IRFH5206TR2PBF

Infineon Technologies IRFH5206TR2PBF

Part Number:
IRFH5206TR2PBF
Manufacturer:
Infineon Technologies
Ventron No:
2854278-IRFH5206TR2PBF
Description:
MOSFET N-CH 60V 16A 5X6 PQFN
ECAD Model:
Datasheet:
IRFH5206TR2PBF

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Specifications
Infineon Technologies IRFH5206TR2PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFH5206TR2PBF.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerVDFN
  • Number of Pins
    8
  • Supplier Device Package
    8-PQFN (5x6)
  • Packaging
    Cut Tape (CT)
  • Series
    HEXFET®
  • Published
    2010
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Max Power Dissipation
    3.6W
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    100W
  • Turn On Delay Time
    6.4 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    6.7mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 100μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2490pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    16A Ta 89A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    60nC @ 10V
  • Rise Time
    11ns
  • Drain to Source Voltage (Vdss)
    60V
  • Fall Time (Typ)
    8.2 ns
  • Turn-Off Delay Time
    22 ns
  • Continuous Drain Current (ID)
    89A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    60V
  • Input Capacitance
    2.49nF
  • Recovery Time
    39 ns
  • Drain to Source Resistance
    6.7mOhm
  • Rds On Max
    6.7 mΩ
  • Nominal Vgs
    4 V
  • Height
    838.2μm
  • Length
    5.9944mm
  • Width
    5mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
Description
IRFH5206TR2PBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2490pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 89A.With a drain-source breakdown voltage of 60V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 60V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 22 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 6.7mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6.4 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.

IRFH5206TR2PBF Features
a continuous drain current (ID) of 89A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 22 ns
single MOSFETs transistor is 6.7mOhm
a threshold voltage of 4V
a 60V drain to source voltage (Vdss)


IRFH5206TR2PBF Applications
There are a lot of Infineon Technologies
IRFH5206TR2PBF applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRFH5206TR2PBF More Descriptions
60V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
MOSFET, 60V, 87A, 7mOhm, 40 nC Qg, PQFN5x6
Trans MOSFET N-CH 60V 16A 8-Pin QFN T/R
MOSFET PQFN-8 (5x6) N 60V 16 A
Multilayer Ceramic Capacitors MLCC - SMD/SMT
MOSFET,N CH,60V,16A,PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:60V; On Resistance Rds(on):5.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:100W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:89A; Power Dissipation Pd:100W; Voltage Vgs Max:20V
Product Comparison
The three parts on the right have similar specifications to IRFH5206TR2PBF.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Max Power Dissipation
    Technology
    Number of Elements
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Recovery Time
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Contact Plating
    Transistor Element Material
    Operating Temperature
    Number of Terminations
    ECCN Code
    Resistance
    Additional Feature
    Subcategory
    Terminal Position
    JESD-30 Code
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    Transistor Application
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Lead Free
    View Compare
  • IRFH5206TR2PBF
    IRFH5206TR2PBF
    Surface Mount
    Surface Mount
    8-PowerVDFN
    8
    8-PQFN (5x6)
    Cut Tape (CT)
    HEXFET®
    2010
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    3.6W
    MOSFET (Metal Oxide)
    1
    Single
    100W
    6.4 ns
    N-Channel
    6.7mOhm @ 50A, 10V
    4V @ 100μA
    2490pF @ 25V
    16A Ta 89A Tc
    60nC @ 10V
    11ns
    60V
    8.2 ns
    22 ns
    89A
    4V
    20V
    60V
    2.49nF
    39 ns
    6.7mOhm
    6.7 mΩ
    4 V
    838.2μm
    5.9944mm
    5mm
    No SVHC
    No
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFH5306TRPBF
    Surface Mount
    Surface Mount
    8-PowerVDFN
    8
    -
    Tape & Reel (TR)
    HEXFET®
    2009
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    1
    -
    3.6W
    9 ns
    N-Channel
    8.1m Ω @ 15A, 10V
    2.35V @ 25μA
    1125pF @ 15V
    15A Ta 44A Tc
    12nC @ 4.5V
    26ns
    -
    6.1 ns
    9.1 ns
    44A
    -
    20V
    30V
    -
    -
    -
    -
    -
    838.2μm
    5.9944mm
    5mm
    -
    No
    RoHS Compliant
    Tin
    SILICON
    -55°C~150°C TJ
    5
    EAR99
    8.1MOhm
    HIGH RELIABILITY
    FET General Purpose Power
    DUAL
    R-PDSO-N5
    SINGLE WITH BUILT-IN DIODE
    3.6W Ta 26W Tc
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    4.5V 10V
    ±20V
    60A
    46 mJ
    Lead Free
  • IRFH5007TR2PBF
    -
    Surface Mount
    8-PowerTDFN
    -
    8-PQFN (5x6)
    Tape & Reel (TR)
    HEXFET®
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    N-Channel
    5.9mOhm @ 50A, 10V
    4V @ 150μA
    4.29pF @ 25V
    17A Ta 100A Tc
    98nC @ 10V
    -
    75V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFH5302DTR2PBF
    Surface Mount
    Surface Mount
    8-PowerVDFN
    8
    PQFN (5x6) Single Die
    Cut Tape (CT)
    HEXFET®
    2010
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    3.6W
    MOSFET (Metal Oxide)
    1
    Single
    104W
    16 ns
    N-Channel
    2.5mOhm @ 50A, 10V
    2.35V @ 100μA
    3635pF @ 25V
    29A Ta 100A Tc
    55nC @ 10V
    30ns
    30V
    12 ns
    20 ns
    100A
    2.35V
    20V
    30V
    3.635nF
    29 ns
    2.5mOhm
    2.5 mΩ
    2.35 V
    838.2μm
    5.9944mm
    5mm
    No SVHC
    No
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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