Infineon Technologies IRFH5206TR2PBF
- Part Number:
- IRFH5206TR2PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2854278-IRFH5206TR2PBF
- Description:
- MOSFET N-CH 60V 16A 5X6 PQFN
- Datasheet:
- IRFH5206TR2PBF
Infineon Technologies IRFH5206TR2PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFH5206TR2PBF.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerVDFN
- Number of Pins8
- Supplier Device Package8-PQFN (5x6)
- PackagingCut Tape (CT)
- SeriesHEXFET®
- Published2010
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Max Power Dissipation3.6W
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation100W
- Turn On Delay Time6.4 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs6.7mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id4V @ 100μA
- Input Capacitance (Ciss) (Max) @ Vds2490pF @ 25V
- Current - Continuous Drain (Id) @ 25°C16A Ta 89A Tc
- Gate Charge (Qg) (Max) @ Vgs60nC @ 10V
- Rise Time11ns
- Drain to Source Voltage (Vdss)60V
- Fall Time (Typ)8.2 ns
- Turn-Off Delay Time22 ns
- Continuous Drain Current (ID)89A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage60V
- Input Capacitance2.49nF
- Recovery Time39 ns
- Drain to Source Resistance6.7mOhm
- Rds On Max6.7 mΩ
- Nominal Vgs4 V
- Height838.2μm
- Length5.9944mm
- Width5mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
IRFH5206TR2PBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2490pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 89A.With a drain-source breakdown voltage of 60V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 60V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 22 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 6.7mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6.4 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.
IRFH5206TR2PBF Features
a continuous drain current (ID) of 89A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 22 ns
single MOSFETs transistor is 6.7mOhm
a threshold voltage of 4V
a 60V drain to source voltage (Vdss)
IRFH5206TR2PBF Applications
There are a lot of Infineon Technologies
IRFH5206TR2PBF applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2490pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 89A.With a drain-source breakdown voltage of 60V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 60V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 22 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 6.7mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6.4 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.
IRFH5206TR2PBF Features
a continuous drain current (ID) of 89A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 22 ns
single MOSFETs transistor is 6.7mOhm
a threshold voltage of 4V
a 60V drain to source voltage (Vdss)
IRFH5206TR2PBF Applications
There are a lot of Infineon Technologies
IRFH5206TR2PBF applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRFH5206TR2PBF More Descriptions
60V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
MOSFET, 60V, 87A, 7mOhm, 40 nC Qg, PQFN5x6
Trans MOSFET N-CH 60V 16A 8-Pin QFN T/R
MOSFET PQFN-8 (5x6) N 60V 16 A
Multilayer Ceramic Capacitors MLCC - SMD/SMT
MOSFET,N CH,60V,16A,PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:60V; On Resistance Rds(on):5.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:100W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:89A; Power Dissipation Pd:100W; Voltage Vgs Max:20V
MOSFET, 60V, 87A, 7mOhm, 40 nC Qg, PQFN5x6
Trans MOSFET N-CH 60V 16A 8-Pin QFN T/R
MOSFET PQFN-8 (5x6) N 60V 16 A
Multilayer Ceramic Capacitors MLCC - SMD/SMT
MOSFET,N CH,60V,16A,PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:60V; On Resistance Rds(on):5.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:100W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:89A; Power Dissipation Pd:100W; Voltage Vgs Max:20V
The three parts on the right have similar specifications to IRFH5206TR2PBF.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackagePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureMax Power DissipationTechnologyNumber of ElementsElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceRecovery TimeDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusContact PlatingTransistor Element MaterialOperating TemperatureNumber of TerminationsECCN CodeResistanceAdditional FeatureSubcategoryTerminal PositionJESD-30 CodeConfigurationPower Dissipation-MaxOperating ModeCase ConnectionTransistor ApplicationDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Pulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Lead FreeView Compare
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IRFH5206TR2PBFSurface MountSurface Mount8-PowerVDFN88-PQFN (5x6)Cut Tape (CT)HEXFET®2010Obsolete1 (Unlimited)150°C-55°C3.6WMOSFET (Metal Oxide)1Single100W6.4 nsN-Channel6.7mOhm @ 50A, 10V4V @ 100μA2490pF @ 25V16A Ta 89A Tc60nC @ 10V11ns60V8.2 ns22 ns89A4V20V60V2.49nF39 ns6.7mOhm6.7 mΩ4 V838.2μm5.9944mm5mmNo SVHCNoRoHS Compliant---------------------
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Surface MountSurface Mount8-PowerVDFN8-Tape & Reel (TR)HEXFET®2009Obsolete1 (Unlimited)---MOSFET (Metal Oxide)1-3.6W9 nsN-Channel8.1m Ω @ 15A, 10V2.35V @ 25μA1125pF @ 15V15A Ta 44A Tc12nC @ 4.5V26ns-6.1 ns9.1 ns44A-20V30V-----838.2μm5.9944mm5mm-NoRoHS CompliantTinSILICON-55°C~150°C TJ5EAR998.1MOhmHIGH RELIABILITYFET General Purpose PowerDUALR-PDSO-N5SINGLE WITH BUILT-IN DIODE3.6W Ta 26W TcENHANCEMENT MODEDRAINSWITCHING4.5V 10V±20V60A46 mJLead Free
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-Surface Mount8-PowerTDFN-8-PQFN (5x6)Tape & Reel (TR)HEXFET®-Obsolete1 (Unlimited)---MOSFET (Metal Oxide)----N-Channel5.9mOhm @ 50A, 10V4V @ 150μA4.29pF @ 25V17A Ta 100A Tc98nC @ 10V-75V----------------ROHS3 Compliant--------------------
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Surface MountSurface Mount8-PowerVDFN8PQFN (5x6) Single DieCut Tape (CT)HEXFET®2010Obsolete1 (Unlimited)150°C-55°C3.6WMOSFET (Metal Oxide)1Single104W16 nsN-Channel2.5mOhm @ 50A, 10V2.35V @ 100μA3635pF @ 25V29A Ta 100A Tc55nC @ 10V30ns30V12 ns20 ns100A2.35V20V30V3.635nF29 ns2.5mOhm2.5 mΩ2.35 V838.2μm5.9944mm5mmNo SVHCNoRoHS Compliant--------------------
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