Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRFB5615PBF
IRFB5615PBF

Infineon Technologies IRFB5615PBF

Part Number:
IRFB5615PBF
Manufacturer:
Infineon Technologies
Ventron No:
2483207-IRFB5615PBF
Description:
MOSFET N-CH 150V 35A TO-220AB
ECAD Model:
Datasheet:
IRFB5615PBF

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Infineon Technologies IRFB5615PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFB5615PBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2006
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    39MOhm
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    144W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    144W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    8.6 ns
  • FET Type
    N-Channel
  • Transistor Application
    AMPLIFIER
  • Rds On (Max) @ Id, Vgs
    39m Ω @ 21A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 100μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1750pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    35A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    40nC @ 10V
  • Rise Time
    23.1ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    13.2 ns
  • Turn-Off Delay Time
    17.1 ns
  • Continuous Drain Current (ID)
    35A
  • Threshold Voltage
    3V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    150V
  • Recovery Time
    120 ns
  • Nominal Vgs
    3 V
  • Height
    9.02mm
  • Length
    10.668mm
  • Width
    4.826mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFB5615PBF Description
For use in Class-D audio amplifier applications, this Digital Audio MOSFET was created. This MOSFET achieves low on-resistance per silicon area by utilizing the most recent processing techniques. In addition, internal Gate resistance, body-diode reverse recovery, and Gate charge are adjusted to enhance crucial Class-D audio amplifier performance elements like efficiency, THD, and EMI. This MOSFET also has repeating avalanche capabilities and an operating junction temperature of 175°C. These characteristics work together to make this MOSFET an extremely effective, durable, and dependable component for ClassD audio amplifier applications.

IRFB5615PBF Features
Key Parameters Optimized for Class-D Audio Amplifier Applications
Low RDSON for Improved Efficiency
Low QG and QSW for Better THD and Improved Efficiency
Low QRR for Better THD and Lower EMI
175°C Operating Junction Temperature for Ruggedness
Can Deliver up to 300W per Channel into 4? Load in Half-Bridge Configuration Amplifier

IRFB5615PBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IRFB5615PBF More Descriptions
150V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Single N-Channel 150 V 39 mOhm 26 nC HEXFET® Power Mosfet - TO-220-3
Trans MOSFET N-CH 150V 150A 3-Pin(3 Tab) TO-220AB - Rail/Tube
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 144 W
Power Field-Effect Transistor, 35A I(D), 150V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Class D Audio; Consumer Full-Bridge; Full-Bridge; Push-Pull
MOSFET DIG AUDIO CLASS D 150V TO220AB; Transistor Polarity:N Channel; On State Resistance:39mohm; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-220AB; Case Style:TO-220AB; Cont Current Id:21A; Max Voltage Vgs th:20V; Power Dissipation Pd:144W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Typ Voltage Vds:150V; Typ Voltage Vgs th:5V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to IRFB5615PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Technology
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Recovery Time
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Contact Plating
    Supplier Device Package
    Termination
    Max Operating Temperature
    Min Operating Temperature
    Drain to Source Voltage (Vdss)
    Dual Supply Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Radiation Hardening
    Series
    Pulsed Drain Current-Max (IDM)
    Voltage - Rated DC
    Current Rating
    Avalanche Energy Rating (Eas)
    View Compare
  • IRFB5615PBF
    IRFB5615PBF
    Infineon Technologies
    12 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    2006
    Active
    1 (Unlimited)
    3
    EAR99
    39MOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
    1
    144W Tc
    Single
    ENHANCEMENT MODE
    144W
    DRAIN
    8.6 ns
    N-Channel
    AMPLIFIER
    39m Ω @ 21A, 10V
    5V @ 100μA
    1750pF @ 50V
    35A Tc
    40nC @ 10V
    23.1ns
    10V
    ±20V
    13.2 ns
    17.1 ns
    35A
    3V
    TO-220AB
    20V
    150V
    120 ns
    3 V
    9.02mm
    10.668mm
    4.826mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFB5620PBF
    IRFB5620PBF
    Infineon Technologies
    12 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    -55°C~175°C TJ
    Tube
    2007
    Active
    1 (Unlimited)
    -
    -
    72.5MOhm
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    1
    144W Tc
    Single
    -
    144W
    -
    8.6 ns
    N-Channel
    -
    72.5mOhm @ 15A, 10V
    5V @ 100μA
    1710pF @ 50V
    25A Tc
    38nC @ 10V
    14.6ns
    10V
    ±20V
    9.9 ns
    17.1 ns
    25A
    5V
    -
    20V
    200V
    -
    5 V
    9.02mm
    10.668mm
    4.826mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    Tin
    TO-220AB
    Through Hole
    175°C
    -55°C
    200V
    200V
    1.71nF
    72.5mOhm
    72.5 mΩ
    No
    -
    -
    -
    -
    -
    IRFB5615PBF vs IRFB5620PBF
  • IRFB4310ZPBF
    IRFB4310ZPBF
    Infineon Technologies
    12 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    2008
    Active
    1 (Unlimited)
    3
    EAR99
    6MOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    -
    -
    1
    250W Tc
    Single
    ENHANCEMENT MODE
    250W
    DRAIN
    20 ns
    N-Channel
    SWITCHING
    6m Ω @ 75A, 10V
    4V @ 150μA
    6860pF @ 50V
    120A Tc
    170nC @ 10V
    60ns
    10V
    ±20V
    57 ns
    55 ns
    140A
    4V
    TO-220AB
    20V
    100V
    40 ns
    4 V
    9.017mm
    10.668mm
    4.826mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    Through Hole
    -
    -
    -
    100V
    -
    -
    -
    No
    HEXFET®
    560A
    -
    -
    -
    IRFB5615PBF vs IRFB4310ZPBF
  • IRFB23N20DPBF
    IRFB23N20DPBF
    Infineon Technologies
    14 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    2000
    Not For New Designs
    1 (Unlimited)
    3
    EAR99
    100MOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    -
    -
    1
    3.8W Ta 170W Tc
    Single
    ENHANCEMENT MODE
    170W
    DRAIN
    14 ns
    N-Channel
    SWITCHING
    100m Ω @ 14A, 10V
    5.5V @ 250μA
    1960pF @ 25V
    24A Tc
    86nC @ 10V
    32ns
    10V
    ±30V
    16 ns
    26 ns
    24A
    5.5V
    TO-220AB
    30V
    200V
    -
    5.5 V
    4.69mm
    10.54mm
    4.699mm
    No SVHC
    ROHS3 Compliant
    Contains Lead, Lead Free
    Tin
    -
    Through Hole
    -
    -
    -
    200V
    -
    -
    -
    No
    HEXFET®
    96A
    200V
    24A
    250 mJ
    IRFB5615PBF vs IRFB23N20DPBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
Related parts for IRFB5615PBF
Popular Search Part Number Related Keywords Search Tags

Latest News

  • 19 March 2024

    AT24C02 Pinout, Working Principle, Characteristics and More

    Ⅰ. AT24C02 overviewⅡ. Working principle of AT24C02Ⅲ. Pins and functions of AT24C02Ⅳ. Characteristics of AT24C02Ⅴ. Block diagram of AT24C02Ⅵ. What should we pay attention to when using AT24C02?Ⅶ....
  • 20 March 2024

    L9110S Advantages, Pinout, Working Principle and Application

    Ⅰ. L9110S overviewⅡ. Advantages of L9110SⅢ. L9110S pin configurationⅣ. Hardware introduction of L9110S motor drive moduleⅤ. Working principle of L9110S motor drive moduleⅥ. L9110S application circuitⅦ. How to...
  • 20 March 2024

    PCF8563 Alternatives, Characteristics, Functions and More

    Ⅰ. Introduction to PCF8563Ⅱ. Characteristics of PCF8563Ⅲ. Main functions of PCF8563Ⅳ. Block diagram of PCF8563Ⅴ. How does PCF8563 work?Ⅵ. Application circuit of PCF8563Ⅶ. Limiting values of PCF8563Ⅷ. How...
  • 21 March 2024

    RC0402FR-075K1L Characteristics, Specifications, Construction and Other Details

    Ⅰ. Overview of RC0402FR-075K1LⅡ. Characteristics of RC0402FR-075K1LⅢ. Specifications of RC0402FR-075K1LⅣ. Construction of RC0402FR-075K1LⅤ. Application of RC0402FR-075K1LⅥ. Inventory history of RC0402FR-075K1LⅦ. Manufacturer of RC0402FR-075K1LⅧ. How to use RC0402FR-075K1L resistor...
  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.