Infineon Technologies IRFB4310ZPBF

Name: IRFB4310ZPBF
Brand: Infineon Technologies
SKU: 2849534-IRFB4310ZPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFB4310ZPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2849534-IRFB4310ZPBF

Description:: MOSFET N-CH 100V 120A TO-220AB

ECAD Model:

Datasheet:: IRFB4310ZPBF

Specifications

Infineon Technologies IRFB4310ZPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFB4310ZPBF.

Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2008
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Resistance
6MOhm
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Power Dissipation-Max
250W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
250W
Case Connection
DRAIN
Turn On Delay Time
20 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
6m Ω @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds
6860pF @ 50V
Current - Continuous Drain (Id) @ 25°C
120A Tc
Gate Charge (Qg) (Max) @ Vgs
170nC @ 10V
Rise Time
60ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
57 ns
Turn-Off Delay Time
55 ns
Continuous Drain Current (ID)
140A
Threshold Voltage
4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Pulsed Drain Current-Max (IDM)
560A
Dual Supply Voltage
100V
Recovery Time
40 ns
Nominal Vgs
4 V
Height
9.017mm
Length
10.668mm
Width
4.826mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRFB4310ZPBF Description
IRFB4310ZPBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 100V. The operating temperature of the IRFB4310ZPBF is -55°C~175°C TJ and its maximum power dissipation is 250W Tc. IRFB4310ZPBF has 3 pins and it is available in Tube packaging way. The Drain to Source Breakdown Voltage of IRFB4310ZPBF is 100V.

IRFB4310ZPBF Features
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free

IRFB4310ZPBF Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits

IRFB4310ZPBF More Descriptions

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 4.8 Milliohms;ID 120A;TO-220AB;PD 250W
Single N-Channel 100 V 6 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Trans MOSFET N-CH 100V 127A 3-Pin(3 Tab) TO-220AB - Rail/Tube
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 250 W
Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull
MOSFET, N, 100V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:127A; Drain Source Voltage Vds:100V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:250W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4310; Current Id Max:140A; N-channel Gate Charge:120nC; Package / Case:TO-220AB; Power Dissipation Pd:250W; Power Dissipation Pd:250mW; Pulse Current Idm:560A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

Product Comparison

The three parts on the right have similar specifications to IRFB4310ZPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Subcategory

Technology

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Recovery Time

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Drain to Source Voltage (Vdss)

Input Capacitance

Drain to Source Resistance

Rds On Max

Surface Mount

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Weight

Voltage - Rated DC

Current Rating

Number of Channels

View Compare
IRFB4310ZPBF

Infineon Technologies

12 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2008

Active

1 (Unlimited)

3

Through Hole

EAR99

6MOhm

FET General Purpose Power

MOSFET (Metal Oxide)

1

250W Tc

Single

ENHANCEMENT MODE

250W

DRAIN

20 ns

N-Channel

SWITCHING

6m Ω @ 75A, 10V

4V @ 150μA

6860pF @ 50V

120A Tc

170nC @ 10V

60ns

10V

±20V

57 ns

55 ns

140A

4V

TO-220AB

20V

100V

560A

100V

40 ns

4 V

9.017mm

10.668mm

4.826mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFB4233PBF

Infineon Technologies

-

Through Hole

Through Hole

TO-220-3

3

-

-40°C~175°C TJ

Tube

HEXFET®

2007

Obsolete

1 (Unlimited)

-

Through Hole

-

-

-

MOSFET (Metal Oxide)

1

370W Tc

Single

-

370W

-

31 ns

N-Channel

-

37mOhm @ 28A, 10V

5V @ 250μA

5510pF @ 25V

56A Tc

170nC @ 10V

-

10V

±30V

-

51 ns

56A

5V

-

30V

230V

-

276V

-

5 V

16.51mm

10.6426mm

4.82mm

No SVHC

No

RoHS Compliant

-

TO-220AB

175°C

-40°C

230V

5.51nF

37mOhm

37 mΩ

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRFB4310ZPBF vs IRFB4233PBF
IRFBA1404P

Infineon Technologies

-

-

Through Hole

TO-273AA

-

SILICON

-40°C~175°C TJ

Tube

HEXFET®

2010

Obsolete

1 (Unlimited)

3

-

EAR99

-

-

MOSFET (Metal Oxide)

1

300W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

3.7m Ω @ 95A, 10V

4V @ 250μA

7360pF @ 25V

206A Tc

200nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

650A

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

40V

-

-

-

NO

SINGLE

NOT SPECIFIED

NOT SPECIFIED

R-PSIP-T3

Not Qualified

SINGLE WITH BUILT-IN DIODE

95A

0.0037Ohm

40V

-

-

-

-

IRFB4310ZPBF vs IRFBA1404P
IRFB16N50KPBF

Vishay Siliconix

-

Through Hole

Through Hole

TO-220-3

3

-

-55°C~150°C TJ

Tube

-

2004

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

280W Tc

Single

-

280W

-

20 ns

N-Channel

-

350mOhm @ 10A, 10V

5V @ 250μA

2210pF @ 25V

17A Tc

89nC @ 10V

77ns

10V

±30V

30 ns

38 ns

17A

-

-

30V

500V

-

-

-

-

9.01mm

10.41mm

4.7mm

-

-

ROHS3 Compliant

Lead Free

TO-220AB

150°C

-55°C

500V

2.21nF

350mOhm

350 mΩ

-

-

-

-

-

-

-

-

-

-

6.000006g

500V

17A

1

IRFB4310ZPBF vs IRFB16N50KPBF

Certification

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IRFB4310ZPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRFB4310ZPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 127A 3-Pin(3 Tab) TO-220	150	1 $2.0921 10 $1.8504 100 $1.558 500 $1.1278 1000 $1.0149 2000 $0.9136
IRFB4310ZPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 100V 120A TO-220AB RoHS: Compliant	1401	1 $3.22 10 $2.925 100 $2.3841 500 $1.89208 1000 $1.59686
IRFB4310ZPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 127A 3-Pin(3 Tab) TO-220	32117	11 $1.1838 100 $1.1456 250 $1.1098 500 $1.0762 1000 $1.0446 2500 $1.0147 5000 $0.9865 10000 $0.9599 25000 $0.9346
IRFB4310ZPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 127A 3-Pin(3 Tab) TO-220	150	7 $2.0921 10 $1.8504 100 $1.558
IRFB4310ZPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 127A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	850	1 $1.7529 10 $1.6609 25 $1.6569 50 $1.6519 100 $1.4739 500 $1.0339 1000 $0.9309
IRFB4310ZPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 127A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	0	1000 $1.0309 2000 $0.9939 4000 $0.9579 6000 $0.9249 10000 $0.9089
IRFB4310ZPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 127A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	0
IRFB4310ZPBF DISTI #	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 4.8 Mi RoHS: Compliant	0	400 $3.308
IRFB4310ZPBF DISTI #	International Rectifier	RoHS: Not Compliant	102	1 $1.44 25 $1.34 100 $1.28 500 $1.23 1000 $1.17
IRFB4310ZPBF DISTI #	Infineon Technologies AG	MOSFET MOSFT 100V 127A 6mOhm 120nC Qg RoHS: Compliant	3031	1 $2.64 10 $2.24 100 $1.79 500 $1.57 1000 $1.3 2000 $1.21
IRFB4310ZPBF DISTI #	Infineon Technologies AG	Single N-Channel 100 V 6 mOhm 120 nC HEXFET Power RoHS: Compliant	7150	10 $1.42 100 $1.28 500 $1.12
IRFB4310ZPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 100V 127A HEXFET TO220AB, PK	110	2 $2.85 10 $1.625 20 $1.57 40 $1.515 100 $1.295
IRFB4310ZPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 100V 127A HEXFET TO220AB, TU	262	10 $1.625 20 $1.57 40 $1.515 100 $1.295
IRFB4310ZPBF DISTI #	Infineon Technologies AG		80	1 $6.63 16 $4.42 58 $4.0885
IRFB4310ZPBF DISTI #	Infineon Technologies AG	N-Ch 100V 120A 250W 0,006R TO220AB RoHS: Compliant	630	10 $1.41 50 $1.11 200 $1.01 500 $0.975
IRFB4310ZPBF DISTI #	Infineon Technologies AG	N-CH 100V 127A 6mOhm TO220-3 RoHS: Compliant	50	50 $1.62 150 $1.53 250 $1.44 500 $1.3 1000 $1.26
IRFB4310ZPBF DISTI #	Infineon Technologies AG	RoHS: Compliant	4812	100 $2.84 4812 $2.58
IRFB4310ZPBF DISTI #	Infineon Technologies AG	RoHS (ship within 1day)	100	1 $4.21 10 $3.46 50 $2.78 100 $2.38 500 $2.26 1000 $2.21
IRFB4310ZPBF DISTI #	Infineon Technologies AG	INSTOCK	103
IRFB4310ZPBF DISTI #	Infineon Technologies AG	MOSFET, N, 100V, TO-220AB RoHS: Compliant	11463	1 $2.3 10 $1.55 100 $1.33 250 $1.27 500 $1.2
IRFB4310ZPBF DISTI #	Infineon Technologies AG	MOSFETs	150	10 $1.8504 100 $1.558
IRFB4310ZPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 127A 3-Pin(3 Tab) TO-220 RoHS: Compliant	1000	1 $3.33 10 $2.83 50 $2.39 100 $2.11
IRFB4310ZPBF DISTI #	Infineon Technologies AG	MOSFET, N, 100V, TO-220AB RoHS: Compliant	1447	1 $4.18 10 $3.55 100 $2.84 500 $2.49 1000 $2.06 2000 $1.95

IRFB431~~(10)~~
IRFB43~~(15)~~
IRFB4~~(58)~~
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IRF~~(69)~~

Infineon Technologies IRFB4310ZPBF

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