IRFB3806PBF

Infineon Technologies IRFB3806PBF

Part Number:
IRFB3806PBF
Manufacturer:
Infineon Technologies
Ventron No:
2480423-IRFB3806PBF
Description:
MOSFET N-CH 60V 43A TO-220AB
ECAD Model:
Datasheet:
IRFB3806PBF

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Specifications
Infineon Technologies IRFB3806PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFB3806PBF.
  • Factory Lead Time
    12 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2008
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    15.8MOhm
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Power Dissipation-Max
    71W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    71W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    6.3 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    15.8m Ω @ 25A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 50μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1150pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    43A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    30nC @ 10V
  • Rise Time
    40ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    47 ns
  • Turn-Off Delay Time
    49 ns
  • Continuous Drain Current (ID)
    43A
  • Threshold Voltage
    4V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    60V
  • Recovery Time
    33 ns
  • Height
    9.017mm
  • Length
    10.6426mm
  • Width
    4.82mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFB3806PBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1150pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 43A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 49 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6.3 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IRFB3806PBF Features
a continuous drain current (ID) of 43A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 49 ns
a threshold voltage of 4V


IRFB3806PBF Applications
There are a lot of Infineon Technologies
IRFB3806PBF applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IRFB3806PBF More Descriptions
Single N-Channel 60 V 15.8 mOhm 22 nC HEXFET® Power Mosfet - TO-220-3
INFINEON THT MOSFET NFET 60V 43A 15,8mΩ 175°C TO-220 IRFB3806PBF
Trans MOSFET N-CH 60V 43A 3-Pin(3 Tab) TO-220AB Tube / MOSFET N-CH 60V 43A TO-220AB
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
MOSFET, 60V, 43A, 16.2 MOHM, 22 NC QG, TO-220AB
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive
MOSFET, N, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12.6mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:71W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:43A; Package / Case:TO-220AB; Power Dissipation Pd:71W; Pulse Current Idm:170A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to IRFB3806PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Technology
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Recovery Time
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Termination
    Max Operating Temperature
    Min Operating Temperature
    Drain to Source Voltage (Vdss)
    Dual Supply Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Weight
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Number of Channels
    Voltage - Rated DC
    Current Rating
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    View Compare
  • IRFB3806PBF
    IRFB3806PBF
    12 Weeks
    Tin
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2008
    Active
    1 (Unlimited)
    3
    EAR99
    15.8MOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    1
    71W Tc
    Single
    ENHANCEMENT MODE
    71W
    DRAIN
    6.3 ns
    N-Channel
    SWITCHING
    15.8m Ω @ 25A, 10V
    4V @ 50μA
    1150pF @ 50V
    43A Tc
    30nC @ 10V
    40ns
    10V
    ±20V
    47 ns
    49 ns
    43A
    4V
    TO-220AB
    20V
    60V
    33 ns
    9.017mm
    10.6426mm
    4.82mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFB4233PBF
    -
    -
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    -40°C~175°C TJ
    Tube
    HEXFET®
    2007
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    1
    370W Tc
    Single
    -
    370W
    -
    31 ns
    N-Channel
    -
    37mOhm @ 28A, 10V
    5V @ 250μA
    5510pF @ 25V
    56A Tc
    170nC @ 10V
    -
    10V
    ±30V
    -
    51 ns
    56A
    5V
    -
    30V
    230V
    -
    16.51mm
    10.6426mm
    4.82mm
    No SVHC
    No
    RoHS Compliant
    -
    TO-220AB
    Through Hole
    175°C
    -40°C
    230V
    276V
    5.51nF
    37mOhm
    37 mΩ
    5 V
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFB7787PBF
    12 Weeks
    -
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    -55°C~175°C TJ
    Tube
    HEXFET®, StrongIRFET™
    2001
    Active
    1 (Unlimited)
    -
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    -
    125W Tc
    Single
    -
    -
    -
    11 ns
    N-Channel
    -
    8.4m Ω @ 46A, 10V
    3.7V @ 100μA
    4020pF @ 25V
    76A Tc
    109nC @ 10V
    48ns
    6V 10V
    ±20V
    39 ns
    51 ns
    76A
    -
    -
    20V
    -
    -
    16.51mm
    10.67mm
    4.83mm
    No SVHC
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    75V
    -
    -
    -
    -
    -
    6.000006g
    NOT SPECIFIED
    NOT SPECIFIED
    1
    -
    -
    -
    -
  • IRFB23N20DPBF
    14 Weeks
    Tin
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2000
    Not For New Designs
    1 (Unlimited)
    3
    EAR99
    100MOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    1
    3.8W Ta 170W Tc
    Single
    ENHANCEMENT MODE
    170W
    DRAIN
    14 ns
    N-Channel
    SWITCHING
    100m Ω @ 14A, 10V
    5.5V @ 250μA
    1960pF @ 25V
    24A Tc
    86nC @ 10V
    32ns
    10V
    ±30V
    16 ns
    26 ns
    24A
    5.5V
    TO-220AB
    30V
    200V
    -
    4.69mm
    10.54mm
    4.699mm
    No SVHC
    No
    ROHS3 Compliant
    Contains Lead, Lead Free
    -
    Through Hole
    -
    -
    -
    200V
    -
    -
    -
    5.5 V
    -
    -
    -
    -
    200V
    24A
    96A
    250 mJ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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