Infineon Technologies IRFB3806PBF
- Part Number:
- IRFB3806PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2480423-IRFB3806PBF
- Description:
- MOSFET N-CH 60V 43A TO-220AB
- Datasheet:
- IRFB3806PBF
Infineon Technologies IRFB3806PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFB3806PBF.
- Factory Lead Time12 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2008
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance15.8MOhm
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Power Dissipation-Max71W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation71W
- Case ConnectionDRAIN
- Turn On Delay Time6.3 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs15.8m Ω @ 25A, 10V
- Vgs(th) (Max) @ Id4V @ 50μA
- Input Capacitance (Ciss) (Max) @ Vds1150pF @ 50V
- Current - Continuous Drain (Id) @ 25°C43A Tc
- Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
- Rise Time40ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)47 ns
- Turn-Off Delay Time49 ns
- Continuous Drain Current (ID)43A
- Threshold Voltage4V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage60V
- Recovery Time33 ns
- Height9.017mm
- Length10.6426mm
- Width4.82mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFB3806PBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1150pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 43A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 49 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6.3 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFB3806PBF Features
a continuous drain current (ID) of 43A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 49 ns
a threshold voltage of 4V
IRFB3806PBF Applications
There are a lot of Infineon Technologies
IRFB3806PBF applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1150pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 43A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 49 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6.3 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFB3806PBF Features
a continuous drain current (ID) of 43A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 49 ns
a threshold voltage of 4V
IRFB3806PBF Applications
There are a lot of Infineon Technologies
IRFB3806PBF applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IRFB3806PBF More Descriptions
Single N-Channel 60 V 15.8 mOhm 22 nC HEXFET® Power Mosfet - TO-220-3
INFINEON THT MOSFET NFET 60V 43A 15,8mΩ 175°C TO-220 IRFB3806PBF
Trans MOSFET N-CH 60V 43A 3-Pin(3 Tab) TO-220AB Tube / MOSFET N-CH 60V 43A TO-220AB
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
MOSFET, 60V, 43A, 16.2 MOHM, 22 NC QG, TO-220AB
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive
MOSFET, N, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12.6mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:71W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:43A; Package / Case:TO-220AB; Power Dissipation Pd:71W; Pulse Current Idm:170A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
INFINEON THT MOSFET NFET 60V 43A 15,8mΩ 175°C TO-220 IRFB3806PBF
Trans MOSFET N-CH 60V 43A 3-Pin(3 Tab) TO-220AB Tube / MOSFET N-CH 60V 43A TO-220AB
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
MOSFET, 60V, 43A, 16.2 MOHM, 22 NC QG, TO-220AB
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive
MOSFET, N, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12.6mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:71W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:43A; Package / Case:TO-220AB; Power Dissipation Pd:71W; Pulse Current Idm:170A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to IRFB3806PBF.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryTechnologyNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageRecovery TimeHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageTerminationMax Operating TemperatureMin Operating TemperatureDrain to Source Voltage (Vdss)Dual Supply VoltageInput CapacitanceDrain to Source ResistanceRds On MaxNominal VgsWeightPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ChannelsVoltage - Rated DCCurrent RatingPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)View Compare
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IRFB3806PBF12 WeeksTinThrough HoleThrough HoleTO-220-33SILICON-55°C~175°C TJTubeHEXFET®2008Active1 (Unlimited)3EAR9915.8MOhmFET General Purpose PowerMOSFET (Metal Oxide)171W TcSingleENHANCEMENT MODE71WDRAIN6.3 nsN-ChannelSWITCHING15.8m Ω @ 25A, 10V4V @ 50μA1150pF @ 50V43A Tc30nC @ 10V40ns10V±20V47 ns49 ns43A4VTO-220AB20V60V33 ns9.017mm10.6426mm4.82mmNo SVHCNoROHS3 CompliantLead Free-------------------
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--Through HoleThrough HoleTO-220-33--40°C~175°C TJTubeHEXFET®2007Obsolete1 (Unlimited)----MOSFET (Metal Oxide)1370W TcSingle-370W-31 nsN-Channel-37mOhm @ 28A, 10V5V @ 250μA5510pF @ 25V56A Tc170nC @ 10V-10V±30V-51 ns56A5V-30V230V-16.51mm10.6426mm4.82mmNo SVHCNoRoHS Compliant-TO-220ABThrough Hole175°C-40°C230V276V5.51nF37mOhm37 mΩ5 V--------
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12 Weeks-Through HoleThrough HoleTO-220-33--55°C~175°C TJTubeHEXFET®, StrongIRFET™2001Active1 (Unlimited)-EAR99--MOSFET (Metal Oxide)-125W TcSingle---11 nsN-Channel-8.4m Ω @ 46A, 10V3.7V @ 100μA4020pF @ 25V76A Tc109nC @ 10V48ns6V 10V±20V39 ns51 ns76A--20V--16.51mm10.67mm4.83mmNo SVHC-ROHS3 CompliantLead Free----75V-----6.000006gNOT SPECIFIEDNOT SPECIFIED1----
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14 WeeksTinThrough HoleThrough HoleTO-220-33SILICON-55°C~175°C TJTubeHEXFET®2000Not For New Designs1 (Unlimited)3EAR99100MOhmFET General Purpose PowerMOSFET (Metal Oxide)13.8W Ta 170W TcSingleENHANCEMENT MODE170WDRAIN14 nsN-ChannelSWITCHING100m Ω @ 14A, 10V5.5V @ 250μA1960pF @ 25V24A Tc86nC @ 10V32ns10V±30V16 ns26 ns24A5.5VTO-220AB30V200V-4.69mm10.54mm4.699mmNo SVHCNoROHS3 CompliantContains Lead, Lead Free-Through Hole---200V---5.5 V----200V24A96A250 mJ
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