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IRF9Z34NSPBF

Infineon Technologies IRF9Z34NSPBF

Part Number:
IRF9Z34NSPBF
Manufacturer:
Infineon Technologies
Ventron No:
2851229-IRF9Z34NSPBF
Description:
MOSFET P-CH 55V 19A D2PAK
ECAD Model:
Datasheet:
IRF9Z34NSPBF

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Specifications
Infineon Technologies IRF9Z34NSPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF9Z34NSPBF.
  • Factory Lead Time
    18 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    1997
  • JESD-609 Code
    e3
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Additional Feature
    AVALANCHE RATED, HIGH RELIABILITY
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    3.8W Ta 68W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    100m Ω @ 10A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    620pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    19A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    35nC @ 10V
  • Drain to Source Voltage (Vdss)
    55V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Drain Current-Max (Abs) (ID)
    19A
  • Drain-source On Resistance-Max
    0.1Ohm
  • Pulsed Drain Current-Max (IDM)
    68A
  • DS Breakdown Voltage-Min
    55V
  • Avalanche Energy Rating (Eas)
    180 mJ
  • RoHS Status
    ROHS3 Compliant
Description
IRF9Z34NSPBF Description
The IRF9Z34NSPBF is a HEXFET? fifth generation single P-channel Power MOSFET utilizing advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides an extremely efficient and reliable device. It provides the highest power capability and the lowest possible ON resistance in any existing surface-mount package. The Infineon IRF9Z34NSPBF is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.

IRF9Z34NSPBF Features
Advanced process technology
Fast switching
Fully avalanche rating
Low static drain-to-source ON-resistance
Dynamic dV/dt rating

IRF9Z34NSPBF Applications
Induction furnaces
Arc furnaces and arc welders
Steel rolling mills
Large motors with periodic loading
Thyristor drives
Automotive
IRF9Z34NSPBF More Descriptions
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.1Ohm;ID -19A;D2Pak;PD 68W;VGS /-20V;-55d
Single P-Channel 55 V 0.1 Ohm 35 nC HEXFET® Power Mosfet - D2PAK
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Trans MOSFET P-CH Si 55V 19A 3-Pin(2 Tab) D2PAK Tube
MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: P Power dissipation: 68 W
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
Product Comparison
The three parts on the right have similar specifications to IRF9Z34NSPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    HTS Code
    JEDEC-95 Code
    Mount
    Pbfree Code
    Reach Compliance Code
    Pin Count
    Continuous Drain Current (ID)
    View Compare
  • IRF9Z34NSPBF
    IRF9Z34NSPBF
    Infineon Technologies
    18 Weeks
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    YES
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    1997
    e3
    Discontinued
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY
    Other Transistors
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    3.8W Ta 68W Tc
    ENHANCEMENT MODE
    DRAIN
    P-Channel
    SWITCHING
    100m Ω @ 10A, 10V
    4V @ 250μA
    620pF @ 25V
    19A Tc
    35nC @ 10V
    55V
    10V
    ±20V
    19A
    0.1Ohm
    68A
    55V
    180 mJ
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF9520NS
    IRF9520NS
    Infineon Technologies
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    YES
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    1998
    e0
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Tin/Lead (Sn/Pb)
    AVALANCHE RATED, HIGH RELIABILITY
    -
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    225
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    3.8W Ta 48W Tc
    ENHANCEMENT MODE
    DRAIN
    P-Channel
    SWITCHING
    480m Ω @ 4A, 10V
    4V @ 250μA
    350pF @ 25V
    6.8A Tc
    27nC @ 10V
    100V
    10V
    ±20V
    6.8A
    0.48Ohm
    27A
    100V
    140 mJ
    Non-RoHS Compliant
    8541.29.00.95
    -
    -
    -
    -
    -
    -
    IRF9Z34NSPBF vs IRF9520NS
  • IRF9410
    IRF9410
    Infineon Technologies
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    YES
    SILICON
    -55°C~150°C TJ
    Tube
    HEXFET®
    1997
    -
    Obsolete
    1 (Unlimited)
    8
    EAR99
    NOT SPECIFIED
    HIGH RELIABILITY
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    R-PDSO-G8
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    2.5W Ta
    ENHANCEMENT MODE
    -
    N-Channel
    SWITCHING
    30m Ω @ 7A, 10V
    1V @ 250μA
    550pF @ 25V
    7A Ta
    27nC @ 10V
    30V
    4.5V 10V
    ±20V
    7A
    0.03Ohm
    37A
    30V
    70 mJ
    Non-RoHS Compliant
    -
    MS-012AA
    -
    -
    -
    -
    -
    IRF9Z34NSPBF vs IRF9410
  • IRF9540STRR
    IRF9540STRR
    Vishay Siliconix
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    -
    2016
    -
    Active
    1 (Unlimited)
    2
    EAR99
    -
    AVALANCHE RATED
    Other Transistors
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    225
    NOT SPECIFIED
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    3.7W Ta 150W Tc
    ENHANCEMENT MODE
    DRAIN
    P-Channel
    SWITCHING
    200m Ω @ 11A, 10V
    4V @ 250μA
    1400pF @ 25V
    19A Tc
    61nC @ 10V
    100V
    10V
    ±20V
    -
    0.2Ohm
    72A
    100V
    640 mJ
    Non-RoHS Compliant
    -
    -
    Surface Mount
    no
    unknown
    3
    19A
    IRF9Z34NSPBF vs IRF9540STRR
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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