Infineon Technologies IRF9520NS

Name: IRF9520NS
Brand: Infineon Technologies
SKU: 2853668-IRF9520NS
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF9520NS

Manufacturer:: Infineon Technologies

Ventron No:: 2853668-IRF9520NS

Description:: MOSFET P-CH 100V 6.8A D2PAK

ECAD Model:

Datasheet:: IRF9520NS

Specifications

Infineon Technologies IRF9520NS technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF9520NS.

Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
1998
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
HTS Code
8541.29.00.95
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
225
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
3.8W Ta 48W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
480m Ω @ 4A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
350pF @ 25V
Current - Continuous Drain (Id) @ 25°C
6.8A Tc
Gate Charge (Qg) (Max) @ Vgs
27nC @ 10V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
6.8A
Drain-source On Resistance-Max
0.48Ohm
Pulsed Drain Current-Max (IDM)
27A
DS Breakdown Voltage-Min
100V
Avalanche Energy Rating (Eas)
140 mJ
RoHS Status
Non-RoHS Compliant

Description

IRF9520NS Description
The IRF9520NS is a HEXFET? fifth generation single P-channel Power MOSFET utilizing advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides an extremely efficient and reliable device. The surface-mount power package is capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.

IRF9520NS Features
Advanced Process Technology
Surface Mount
175??C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated

IRF9520NS Applications
DC motor drive
High-efficiency synchronous rectification in SMPS
Uninterruptible power supply
High-speed power switching
Hard switched and high-frequency circuits

IRF9520NS More Descriptions

MOSFET, P-CHANNEL, -100V, -6.8A, 480 mOhm, 18 nC Qg, D2-Pak
Trans MOSFET P-CH 100V 6.8A 3-Pin(2 Tab) D2PAK
-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Multilayer Ceramic Capacitors MLCC - SMD/SMT 1206 0.12uF 50volt X7R /-10%

Product Comparison

The three parts on the right have similar specifications to IRF9520NS.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Mount

Supplier Device Package

Max Power Dissipation

Continuous Drain Current (ID)

Input Capacitance

Rds On Max

Factory Lead Time

Number of Pins

Subcategory

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Radiation Hardening

Lead Free

Weight

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Current Rating

Number of Channels

Element Configuration

Drain to Source Resistance

Height

Length

Width

View Compare
IRF9520NS

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~175°C TJ

Tube

HEXFET®

1998

e0

Obsolete

1 (Unlimited)

2

EAR99

Tin/Lead (Sn/Pb)

AVALANCHE RATED, HIGH RELIABILITY

8541.29.00.95

MOSFET (Metal Oxide)

SINGLE

GULL WING

225

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

3.8W Ta 48W Tc

ENHANCEMENT MODE

DRAIN

P-Channel

SWITCHING

480m Ω @ 4A, 10V

4V @ 250μA

350pF @ 25V

6.8A Tc

27nC @ 10V

100V

10V

±20V

6.8A

0.48Ohm

27A

100V

140 mJ

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF9540L

Vishay Siliconix

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

-55°C~175°C TJ

Tube

-

2016

-

Active

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

-

P-Channel

-

200mOhm @ 11A, 10V

4V @ 250μA

1400pF @ 25V

19A Tc

61nC @ 10V

100V

10V

±20V

-

-

-

-

-

Non-RoHS Compliant

Through Hole

I2PAK

3.7W

19A

1.4nF

200 mΩ

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF9520NS vs IRF9540L
IRF9383MTRPBF

Infineon Technologies

Surface Mount

DirectFET™ Isometric MX

-

SILICON

-40°C~150°C TJ

Tape & Reel (TR)

HEXFET®

2011

e3

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

-

-

MOSFET (Metal Oxide)

BOTTOM

-

-

-

R-XBCC-N3

-

1

SINGLE WITH BUILT-IN DIODE

2.1W Ta 113W Tc

ENHANCEMENT MODE

DRAIN

P-Channel

SWITCHING

2.9m Ω @ 22A, 10V

2.4V @ 150μA

7305pF @ 15V

22A Ta 160A Tc

130nC @ 10V

30V

4.5V 10V

±20V

-

0.0029Ohm

-

-

-

ROHS3 Compliant

Surface Mount

-

-

22A

-

-

12 Weeks

7

Other Transistors

2.1W

29 ns

160ns

110 ns

115 ns

20V

-30V

No

Lead Free

-

-

-

-

-

-

-

-

-

-

-

IRF9520NS vs IRF9383MTRPBF
IRF9510S

Vishay Siliconix

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tube

-

2016

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

3.7W Ta 43W Tc

-

-

P-Channel

-

1.2Ohm @ 2.4A, 10V

4V @ 250μA

200pF @ 25V

4A Tc

8.7nC @ 10V

100V

10V

±20V

-

-

-

-

-

Non-RoHS Compliant

Surface Mount

D2PAK

-

4A

200pF

1.2 Ω

-

-

-

43W

10 ns

27ns

17 ns

15 ns

20V

-100V

-

Contains Lead

1.437803g

175°C

-55°C

-100V

-4A

1

Single

1.2Ohm

4.83mm

10.41mm

9.65mm

IRF9520NS vs IRF9510S