Infineon Technologies IRF7855PBF

Name: IRF7855PBF
Brand: Infineon Technologies
SKU: 2479401-IRF7855PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF7855PBF

Manufacturer:: Infineon Technologies

Ventron No:: 2479401-IRF7855PBF

Description:: MOSFET N-CH 60V 12A 8-SOIC

ECAD Model:

Datasheet:: IRF7855PBF

Specifications

Infineon Technologies IRF7855PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7855PBF.

Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Supplier Device Package
8-SO
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
2.5W Ta
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
9.4mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
4.9V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
1.56pF @ 25V
Current - Continuous Drain (Id) @ 25°C
12A Ta
Gate Charge (Qg) (Max) @ Vgs
39nC @ 10V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
RoHS Status
ROHS3 Compliant

Description

IRF7855PBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1.56pF @ 25V.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IRF7855PBF Features
a 60V drain to source voltage (Vdss)

IRF7855PBF Applications
There are a lot of Rochester Electronics, LLC
IRF7855PBF applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

IRF7855PBF More Descriptions

IRF7855PBF N-channel MOSFET Transistor,12 A, 60 V, 8-Pin SOIC
Single N-Channel 60 V 9.4 mOhm 26 nC HEXFET® Power Mosfet - SOIC-8
60V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package, SO8, RoHSInfineon SCT
MOSFET, N, 60V, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:60V; On Resistance Rds(on):9.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.9V; Power Dissipation Pd:97mW; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Base Number:7855; Current Id Max:12A; Output Current Max:2.5A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:97mW; Pulse Current Idm:97A; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to IRF7855PBF.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

RoHS Status

Surface Mount

Transistor Element Material

Published

Number of Terminations

ECCN Code

Additional Feature

HTS Code

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Operating Mode

Transistor Application

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Mount

Max Power Dissipation

Continuous Drain Current (ID)

Input Capacitance

Rds On Max

Factory Lead Time

Number of Pins

Weight

Pbfree Code

Number of Channels

Element Configuration

Case Connection

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Gate to Source Voltage (Vgs)

Height

Length

Width

Radiation Hardening

View Compare
IRF7855PBF

Infineon Technologies

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8-SO

-55°C~150°C TJ

Tube

HEXFET®

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

2.5W Ta

N-Channel

9.4mOhm @ 12A, 10V

4.9V @ 100μA

1.56pF @ 25V

12A Ta

39nC @ 10V

60V

10V

±20V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF7201TR

Infineon Technologies

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

2.5W Tc

N-Channel

30m Ω @ 7.3A, 10V

1V @ 250μA

550pF @ 25V

7.3A Tc

28nC @ 10V

30V

4.5V 10V

±20V

Non-RoHS Compliant

YES

SILICON

2003

8

EAR99

LOGIC LEVEL COMPATIBLE

8541.29.00.95

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

R-PDSO-G8

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

SWITCHING

MS-012AA

7.3A

0.03Ohm

58A

30V

70 mJ

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF7855PBF vs IRF7201TR
IRF710L

Vishay Siliconix

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

I2PAK

-55°C~150°C TJ

Tube

-

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

-

N-Channel

3.6Ohm @ 1.2A, 10V

4V @ 250μA

170pF @ 25V

2A Tc

17nC @ 10V

400V

10V

±20V

Non-RoHS Compliant

-

-

2016

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Through Hole

3.1W

2A

170pF

3.6 Ω

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF7855PBF vs IRF710L
IRF720LPBF

Vishay Siliconix

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-55°C~150°C TJ

Tube

-

Active

1 (Unlimited)

MOSFET (Metal Oxide)

3.1W Ta 50W Tc

N-Channel

1.8 Ω @ 2A, 10V

4V @ 250μA

410pF @ 25V

3.3A Tc

20nC @ 10V

400V

10V

±20V

ROHS3 Compliant

-

SILICON

2017

3

-

-

-

-

-

-

-

-

-

1

-

ENHANCEMENT MODE

SWITCHING

TO-220AB

-

-

-

400V

-

Through Hole

-

3.3A

-

-

12 Weeks

3

6.000006g

yes

1

Single

DRAIN

10 ns

14ns

13 ns

30 ns

20V

9.01mm

10.41mm

4.7mm

No

IRF7855PBF vs IRF720LPBF

Certification

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IRF7855PBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRF7855PBF DISTI #IRF7855PBF	Infineon Technologies AG	Trans MOSFET N-CH 60V 12A 8-Pin SOIC Tube RoHS: Compliant	3800	1 $0.76
IRF7855PBF DISTI #IRF7855PBF	Infineon Technologies AG	Trans MOSFET N-CH 60V 12A 8-Pin SOIC Tube RoHS: Compliant	2817	1 $1.2109 10 $1.061 100 $0.888 500 $0.7867 1000 $0.6685 2500 $0.6076
IRF7855PBF DISTI #IRF7855PBF	Infineon Technologies AG	MOSFET N-CH 60V 12A 8-SOIC RoHS: Compliant	574	1 $1.82 10 $1.648 100 $1.3245 500 $1.0302 1000 $0.85359
IRF7855PBF DISTI #IRF7855PBF	Infineon Technologies AG	Trans MOSFET N-CH 60V 12A 8-Pin SOIC Tube RoHS: Compliant	3800	12 $0.76
IRF7855PBF DISTI #IRF7855PBF	Infineon Technologies AG	Trans MOSFET N-CH 60V 12A 8-Pin SOIC Tube RoHS: Compliant	2817	12 $1.061 100 $0.888 500 $0.7867 1000 $0.6685 2500 $0.6076
IRF7855PBF DISTI #IRF7855PBF	Infineon Technologies AG	Trans MOSFET N-CH 60V 12A 8-Pin SOIC Tube RoHS: Compliant	2625	20 $0.5808 150 $0.5232
IRF7855PBF DISTI #IRF7855PBF	Infineon Technologies AG	MOSFET, N Ch., 60V, 12A, 9.4 MOHM, 26 NC QG, RoHS: Compliant	0	5 $1.53
IRF7855PBF DISTI #IRF7855PBF	Infineon Technologies AG	MOSFET 60V 1 N-CH HEXFET 9.4mOhms 26nC RoHS: Compliant	1900	1 $1.51 10 $1.28 100 $1.03 500 $0.896 1000 $0.743
IRF7855PBF DISTI #IRF7855PBF	Infineon Technologies AG	Power Field-Effect Transistor, 12A I(D), 60V, 0.00 RoHS: Compliant	11	1 $0.68 25 $0.63 100 $0.61 500 $0.58 1000 $0.55
IRF7855PBF DISTI #IRF7855PBF	International Rectifier	RoHS: Not Compliant	3834	1 $0.83 25 $0.77 100 $0.74 500 $0.71 1000 $0.67
IRF7855PBF DISTI #IRF7855PBF	International Rectifier		854
IRF7855PBF DISTI #IRF7855PBF	International Rectifier	12 A, 60 V, 0.0094 ohm, N-CHANNEL, Si, POWER, MOSF	17	1 $1.8 4 $1.35 12 $0.9
IRF7855PBF DISTI #IRF7855PBF	Infineon Technologies AG	MOSFET N-CHANNEL 60V 12A HEXFET SOIC8, PK	85	5 $1.176 50 $1.034 100 $0.906
IRF7855PBF DISTI #IRF7855PBF	Infineon Technologies AG	MOSFET N-CHANNEL 60V 12A HEXFET SOIC8, TU	2880	50 $1.034 100 $0.906
IRF7855PBF DISTI #IRF7855PBF	Infineon Technologies AG	Trans MOSFET N-CH 60V 12A 8-Pin SOIC Tube RoHS: Compliant	2625	5 $1.77 25 $1.29 50 $1.15 100 $0.968 500 $0.87 1000 $0.804
IRF7855PBF DISTI #IRF7855PBF	Infineon Technologies AG	MOSFET, N, 60V, SO-8 RoHS: Compliant	1672	5 $1.07 25 $0.909 100 $0.78 250 $0.773 500 $0.678
IRF7855PBF DISTI #IRF7855PBF	Infineon Technologies AG	MOSFET, N, 60V, SO-8 RoHS: Compliant	1185	1 $2.4 10 $2.03 100 $1.63 500 $1.42 1000 $1.18

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Infineon Technologies IRF7855PBF

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