Infineon Technologies IRF7853PBF
- Part Number:
- IRF7853PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2479302-IRF7853PBF
- Description:
- MOSFET N-CH 100V 8.3A 8-SOIC
- ECAD Model:
-
- Datasheet:
- IRF7853PBF
Infineon Technologies IRF7853PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7853PBF.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2006
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance18MOhm
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Power Dissipation-Max2.5W Ta
- Element ConfigurationSingle
- Power Dissipation2.5W
- Turn On Delay Time13 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs18m Ω @ 8.3A, 10V
- Vgs(th) (Max) @ Id4.9V @ 100μA
- Input Capacitance (Ciss) (Max) @ Vds1640pF @ 25V
- Current - Continuous Drain (Id) @ 25°C8.3A Ta
- Gate Charge (Qg) (Max) @ Vgs39nC @ 10V
- Rise Time6.6ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)6 ns
- Turn-Off Delay Time26 ns
- Continuous Drain Current (ID)8.3A
- Threshold Voltage4.9V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage100V
- Dual Supply Voltage100V
- Recovery Time68 ns
- Nominal Vgs4.9 V
- Height1.4986mm
- Length4.9784mm
- Width3.9878mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF7853PBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1640pF @ 25V.This device has a continuous drain current (ID) of [8.3A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 26 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 13 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4.9V.Its overall power consumption can be reduced by using drive voltage (10V).
IRF7853PBF Features
a continuous drain current (ID) of 8.3A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 26 ns
a threshold voltage of 4.9V
IRF7853PBF Applications
There are a lot of Infineon Technologies
IRF7853PBF applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1640pF @ 25V.This device has a continuous drain current (ID) of [8.3A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 26 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 13 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4.9V.Its overall power consumption can be reduced by using drive voltage (10V).
IRF7853PBF Features
a continuous drain current (ID) of 8.3A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 26 ns
a threshold voltage of 4.9V
IRF7853PBF Applications
There are a lot of Infineon Technologies
IRF7853PBF applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IRF7853PBF More Descriptions
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 14.4 Milliohms;ID 8.3A;SO-8;PD 2.5W;gFS 11S
Single N-Channel 100 V 18 mOhm 28 nC HEXFET® Power Mosfet - SOIC-8
100V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 Package, SO8, RoHSInfineon SCT
Trans MOSFET N-CH 100V 8.3A 8-Pin SOIC T/R
Power Field-Effect Transistor, 8.3A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, N, 100V, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:8.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.9V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 25°C:8.3A; Cont Current Id @ 70°C:6.6; Current Id Max:8.3A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:66A; Rth:50; Termination Type:SMD; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Single N-Channel 100 V 18 mOhm 28 nC HEXFET® Power Mosfet - SOIC-8
100V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 Package, SO8, RoHSInfineon SCT
Trans MOSFET N-CH 100V 8.3A 8-Pin SOIC T/R
Power Field-Effect Transistor, 8.3A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, N, 100V, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:8.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.9V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 25°C:8.3A; Cont Current Id @ 70°C:6.6; Current Id Max:8.3A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:66A; Rth:50; Termination Type:SMD; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to IRF7853PBF.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)TerminationECCN CodeResistanceTechnologyNumber of ElementsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageRecovery TimeNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageMax Power DissipationDrain to Source Voltage (Vdss)Input CapacitanceRds On MaxFactory Lead TimeWeightTransistor Element MaterialPbfree CodeNumber of TerminationsNumber of ChannelsOperating ModeCase ConnectionTransistor ApplicationJEDEC-95 CodeDS Breakdown Voltage-MinAdditional FeatureVoltage - Rated DCTerminal PositionTerminal FormCurrent RatingOutput CurrentView Compare
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IRF7853PBFSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-55°C~150°C TJTubeHEXFET®2006Discontinued1 (Unlimited)SMD/SMTEAR9918MOhmMOSFET (Metal Oxide)12.5W TaSingle2.5W13 nsN-Channel18m Ω @ 8.3A, 10V4.9V @ 100μA1640pF @ 25V8.3A Ta39nC @ 10V6.6ns10V±20V6 ns26 ns8.3A4.9V20V100V100V68 ns4.9 V1.4986mm4.9784mm3.9878mmNo SVHCNoROHS3 CompliantLead Free----------------------- -
Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA--55°C~150°C TJTube-2016Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-----N-Channel3.6Ohm @ 1.2A, 10V4V @ 250μA170pF @ 25V2A Tc17nC @ 10V-10V±20V--2A-----------Non-RoHS Compliant-I2PAK3.1W400V170pF3.6 Ω-----------------
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Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA3-55°C~150°C TJTube-2017Active1 (Unlimited)---MOSFET (Metal Oxide)13.1W Ta 50W TcSingle-10 nsN-Channel1.8 Ω @ 2A, 10V4V @ 250μA410pF @ 25V3.3A Tc20nC @ 10V14ns10V±20V13 ns30 ns3.3A-20V----9.01mm10.41mm4.7mm-NoROHS3 Compliant---400V--12 Weeks6.000006gSILICONyes31ENHANCEMENT MODEDRAINSWITCHINGTO-220AB400V------
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Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-55°C~150°C TJTape & Reel (TR)HEXFET®1997Active1 (Unlimited)--60mOhmMOSFET (Metal Oxide)12.5W TcSingle2.5W14 nsP-Channel60m Ω @ 5.3A, 10V2.5V @ 250μA860pF @ 10V5.3A Ta25nC @ 10V26ns4.5V 10V±12V68 ns100 ns-5.3A-2.5V12V-20V-20V100 ns-2.5 V1.4986mm4.9784mm3.9878mmNo SVHCNoROHS3 CompliantContains Lead, Lead Free--20V--12 Weeks-SILICON-8-ENHANCEMENT MODE-SWITCHING--LOGIC LEVEL COMPATIBLE-20VDUALGULL WING-5.3A5.3A
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