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IRF7478TRPBF

Infineon Technologies IRF7478TRPBF

Part Number:
IRF7478TRPBF
Manufacturer:
Infineon Technologies
Ventron No:
2848675-IRF7478TRPBF
Description:
MOSFET N-CH 60V 7A 8-SOIC
ECAD Model:
Datasheet:
IRF7478TRPBF

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Specifications
Infineon Technologies IRF7478TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7478TRPBF.
  • Factory Lead Time
    12 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2004
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Resistance
    26MOhm
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    60V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    4.2A
  • Number of Channels
    1
  • Power Dissipation-Max
    2.5W Ta
  • Element Configuration
    Single
  • Power Dissipation
    2.5W
  • Turn On Delay Time
    7.7 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    26m Ω @ 4.2A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1740pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    7A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    31nC @ 4.5V
  • Rise Time
    2.6ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    13 ns
  • Turn-Off Delay Time
    44 ns
  • Continuous Drain Current (ID)
    4.2A
  • Threshold Voltage
    3V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    7A
  • Drain to Source Breakdown Voltage
    60V
  • Max Junction Temperature (Tj)
    150°C
  • Height
    1.75mm
  • Length
    4.9784mm
  • Width
    3.9878mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRF7478TRPBF Description
The IRF7478TRPBF is a HEXFET? single N-channel Power MOSFET offering a low gate-to-drain charge to reduce switching losses. The Infineon IRF7478TRPBF is suitable for high-frequency DC-to-DC converters. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor IRF7478TRPBF is in the SOIC-8 package with 2.5W power dissipation.

IRF7478TRPBF Features
Low Gate to Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective COSS to Simplify Design
Fully Characterized Avalanche Voltage and Current
Lead-Free
Drain-to-Source Breakdown Voltage: 60v

IRF7478TRPBF Applications
Cellular phones 
Laptop computers
Photovoltaic systems 
Wind turbines
Shunt voltage regulator and the series voltage regulator
IRF7478TRPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 20 Milliohms;ID 7A;SO-8;PD 2.5W;VGS /-20V
Single N-Channel 60 V 30 mOhm 31 nC HEXFET® Power Mosfet - SOIC-8
Small Signal Field-Effect Transistor, 7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:7.6A; On Resistance, Rds(on):30mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:8-SO; Power Dissipation, Pd:2.5W ;RoHS Compliant: Yes
MOSFET, N CH, 60V, 7A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.02ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Product Comparison
The three parts on the right have similar specifications to IRF7478TRPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Resistance
    Subcategory
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Max Junction Temperature (Tj)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Number of Elements
    Drain to Source Voltage (Vdss)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Surface Mount
    Transistor Element Material
    Number of Terminations
    Additional Feature
    HTS Code
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Operating Mode
    Transistor Application
    JEDEC-95 Code
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Output Current
    Dual Supply Voltage
    Recovery Time
    Nominal Vgs
    View Compare
  • IRF7478TRPBF
    IRF7478TRPBF
    Infineon Technologies
    12 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    Not For New Designs
    1 (Unlimited)
    EAR99
    26MOhm
    FET General Purpose Power
    60V
    MOSFET (Metal Oxide)
    4.2A
    1
    2.5W Ta
    Single
    2.5W
    7.7 ns
    N-Channel
    26m Ω @ 4.2A, 10V
    3V @ 250μA
    1740pF @ 25V
    7A Ta
    31nC @ 4.5V
    2.6ns
    4.5V 10V
    ±20V
    13 ns
    44 ns
    4.2A
    3V
    20V
    7A
    60V
    150°C
    1.75mm
    4.9784mm
    3.9878mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF7233PBF
    IRF7233PBF
    Infineon Technologies
    -
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -55°C~150°C TJ
    Tube
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    -
    20MOhm
    -
    -12V
    MOSFET (Metal Oxide)
    -9.5A
    -
    2.5W Ta
    -
    2.5W
    -
    P-Channel
    20mOhm @ 9.5A, 4.5V
    600mV @ 250μA
    6000pF @ 10V
    9.5A Ta
    74nC @ 5V
    540ns
    2.5V 4.5V
    ±12V
    370 ns
    77 ns
    -9.5A
    -
    12V
    -
    -12V
    -
    -
    -
    -
    -
    No
    RoHS Compliant
    Lead Free
    8-SO
    150°C
    -55°C
    1
    12V
    6nF
    20mOhm
    20 mΩ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRF7478TRPBF vs IRF7233PBF
  • IRF7201TR
    IRF7201TR
    Infineon Technologies
    -
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    2003
    Obsolete
    1 (Unlimited)
    EAR99
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    2.5W Tc
    -
    -
    -
    N-Channel
    30m Ω @ 7.3A, 10V
    1V @ 250μA
    550pF @ 25V
    7.3A Tc
    28nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    7.3A
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    1
    30V
    -
    -
    -
    YES
    SILICON
    8
    LOGIC LEVEL COMPATIBLE
    8541.29.00.95
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    R-PDSO-G8
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    SWITCHING
    MS-012AA
    0.03Ohm
    58A
    30V
    70 mJ
    -
    -
    -
    -
    IRF7478TRPBF vs IRF7201TR
  • IRF7204TRPBF
    IRF7204TRPBF
    Infineon Technologies
    12 Weeks
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    1997
    Active
    1 (Unlimited)
    -
    60mOhm
    -
    -20V
    MOSFET (Metal Oxide)
    -5.3A
    -
    2.5W Tc
    Single
    2.5W
    14 ns
    P-Channel
    60m Ω @ 5.3A, 10V
    2.5V @ 250μA
    860pF @ 10V
    5.3A Ta
    25nC @ 10V
    26ns
    4.5V 10V
    ±12V
    68 ns
    100 ns
    -5.3A
    -2.5V
    12V
    -
    -20V
    -
    1.4986mm
    4.9784mm
    3.9878mm
    No SVHC
    No
    ROHS3 Compliant
    Contains Lead, Lead Free
    -
    -
    -
    1
    20V
    -
    -
    -
    -
    SILICON
    8
    LOGIC LEVEL COMPATIBLE
    -
    DUAL
    GULL WING
    -
    -
    -
    -
    -
    ENHANCEMENT MODE
    SWITCHING
    -
    -
    -
    -
    -
    5.3A
    -20V
    100 ns
    -2.5 V
    IRF7478TRPBF vs IRF7204TRPBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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