Infineon Technologies IRF7478PBF
- Part Number:
- IRF7478PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2479632-IRF7478PBF
- Description:
- MOSFET N-CH 60V 7A 8-SOIC
- ECAD Model:
-
- Datasheet:
- IRF7478PBF
Infineon Technologies IRF7478PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7478PBF.
- Factory Lead Time14 Weeks
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2004
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max2.5W Ta
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs26m Ω @ 4.2A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1740pF @ 25V
- Current - Continuous Drain (Id) @ 25°C7A Ta
- Gate Charge (Qg) (Max) @ Vgs31nC @ 4.5V
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- RoHS StatusROHS3 Compliant
IRF7478PBF Description
IRF7478PBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 60V. The operating temperature of the IRF7478PBF is -55??C~150??C TJ and its maximum power dissipation is 2.5W Ta. IRF7478PBF has 8 pins and it is available in Tube packaging way. The Drain to Source Voltage (Vdss) of IRF7478PBF is 60V.
IRF7478PBF Features
Low Gate to Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
Fully Characterized Avalanche Voltage and Current
IRF7478PBF Applications
High frequency DC-DC converters
Lead-Free
IRF7478PBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 60V. The operating temperature of the IRF7478PBF is -55??C~150??C TJ and its maximum power dissipation is 2.5W Ta. IRF7478PBF has 8 pins and it is available in Tube packaging way. The Drain to Source Voltage (Vdss) of IRF7478PBF is 60V.
IRF7478PBF Features
Low Gate to Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
Fully Characterized Avalanche Voltage and Current
IRF7478PBF Applications
High frequency DC-DC converters
Lead-Free
IRF7478PBF More Descriptions
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 20 Milliohms;ID 7A;SO-8;PD 2.5W;VGS /-20V
Single N-Channel 60 V 26 mOhm 21 nC HEXFET® Power Mosfet - SOIC-8
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:4.2A; On Resistance, Rds(on):26mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
MOSFET, N, LOGIC, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:4.2A; Resistance, Rds On:0.026ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:56A; External Depth:5.2mm; External Length / Height:1.75mm; No. of Pins:8; Power Dissipation:2.5W; Power, Pd:2.5W; Row Pitch:6.3mm; SMD Marking:IRF7478PBF; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:60V; Width, External:4.05mm
Single N-Channel 60 V 26 mOhm 21 nC HEXFET® Power Mosfet - SOIC-8
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:4.2A; On Resistance, Rds(on):26mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
MOSFET, N, LOGIC, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:4.2A; Resistance, Rds On:0.026ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:56A; External Depth:5.2mm; External Length / Height:1.75mm; No. of Pins:8; Power Dissipation:2.5W; Power, Pd:2.5W; Row Pitch:6.3mm; SMD Marking:IRF7478PBF; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:60V; Width, External:4.05mm
The three parts on the right have similar specifications to IRF7478PBF.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeTechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusMountSupplier Device PackageMax Power DissipationContinuous Drain Current (ID)Input CapacitanceRds On MaxNumber of PinsWeightTransistor Element MaterialPbfree CodeNumber of TerminationsNumber of ElementsNumber of ChannelsElement ConfigurationOperating ModeCase ConnectionTurn On Delay TimeTransistor ApplicationRise TimeFall Time (Typ)Turn-Off Delay TimeJEDEC-95 CodeGate to Source Voltage (Vgs)DS Breakdown Voltage-MinHeightLengthWidthRadiation HardeningResistanceAdditional FeatureVoltage - Rated DCTerminal PositionTerminal FormCurrent RatingPower DissipationOutput CurrentThreshold VoltageDrain to Source Breakdown VoltageDual Supply VoltageRecovery TimeNominal VgsREACH SVHCLead FreeView Compare
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IRF7478PBF14 WeeksSurface Mount8-SOIC (0.154, 3.90mm Width)-55°C~150°C TJTubeHEXFET®2004Discontinued1 (Unlimited)EAR99MOSFET (Metal Oxide)2.5W TaN-Channel26m Ω @ 4.2A, 10V3V @ 250μA1740pF @ 25V7A Ta31nC @ 4.5V60V4.5V 10V±20VROHS3 Compliant-------------------------------------------- -
-Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA-55°C~150°C TJTube-2016Obsolete1 (Unlimited)-MOSFET (Metal Oxide)-N-Channel3.6Ohm @ 1.2A, 10V4V @ 250μA170pF @ 25V2A Tc17nC @ 10V400V10V±20VNon-RoHS CompliantThrough HoleI2PAK3.1W2A170pF3.6 Ω-------------------------------------
-
12 WeeksThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA-55°C~150°C TJTube-2017Active1 (Unlimited)-MOSFET (Metal Oxide)3.1W Ta 50W TcN-Channel1.8 Ω @ 2A, 10V4V @ 250μA410pF @ 25V3.3A Tc20nC @ 10V400V10V±20VROHS3 CompliantThrough Hole--3.3A--36.000006gSILICONyes311SingleENHANCEMENT MODEDRAIN10 nsSWITCHING14ns13 ns30 nsTO-220AB20V400V9.01mm10.41mm4.7mmNo---------------
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12 WeeksSurface Mount8-SOIC (0.154, 3.90mm Width)-55°C~150°C TJTape & Reel (TR)HEXFET®1997Active1 (Unlimited)-MOSFET (Metal Oxide)2.5W TcP-Channel60m Ω @ 5.3A, 10V2.5V @ 250μA860pF @ 10V5.3A Ta25nC @ 10V20V4.5V 10V±12VROHS3 CompliantSurface Mount---5.3A--8-SILICON-81-SingleENHANCEMENT MODE-14 nsSWITCHING26ns68 ns100 ns-12V-1.4986mm4.9784mm3.9878mmNo60mOhmLOGIC LEVEL COMPATIBLE-20VDUALGULL WING-5.3A2.5W5.3A-2.5V-20V-20V100 ns-2.5 VNo SVHCContains Lead, Lead Free
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