Infineon Technologies IRF7451TRPBF

Name: IRF7451TRPBF
Brand: Infineon Technologies
SKU: 2479602-IRF7451TRPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF7451TRPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2479602-IRF7451TRPBF

Description:: MOSFET N-CH 150V 3.6A 8-SOIC

ECAD Model:

Datasheet:: IRF7451TRPBF

Specifications

Infineon Technologies IRF7451TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7451TRPBF.

Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2004
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Voltage - Rated DC
150V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
3.6A
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.5W Ta
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Turn On Delay Time
10 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
90m Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
990pF @ 25V
Current - Continuous Drain (Id) @ 25°C
3.6A Ta
Gate Charge (Qg) (Max) @ Vgs
41nC @ 10V
Rise Time
4.2ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
15 ns
Turn-Off Delay Time
17 ns
Continuous Drain Current (ID)
3.6A
Gate to Source Voltage (Vgs)
30V
Drain-source On Resistance-Max
0.09Ohm
Drain to Source Breakdown Voltage
150V
Pulsed Drain Current-Max (IDM)
29A
Height
1.4986mm
Length
4.9784mm
Width
3.9878mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRF7451TRPBF Description IRF7451TRPBF is a 150V Single N-Channel HEXFET Power MOSFET in a SO-8 package. The operating temperature of IRF7451TRPBF MOSFET ranges from -55°C to 150°C TJ. The IRF7451TRPBF is recommended to be mounted by a surface mount.
IRF7451TRPBF Features Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100KHz
Industry-standard surface-mount power package
Capable of being wave-soldered
RoHS Compliant
Industry-leading quality
Fully Characterized Avalanche Voltage and Current
Low Gate-to-Drain Charge to Reduce Switching Losses
IRF7451TRPBF Applications Lead-Free
High-frequency DC-DC converters
Used in inverter Circuits
Used in DC-DC Converters
Used in control speed of motors
Used in LED dimmers or flashers
Used in USP

IRF7451TRPBF More Descriptions

Single N-Channel 150 V 0.09 Ohm 41 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET N-CH 150V 3.6A 8-Pin SOIC T/R / MOSFET N-CH 150V 3.6A 8-SOIC
150V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHSInfineon SCT
MOSFET, N-CH, 150V, 3.6A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:3.6A; Source Voltage Vds:150V; On Resistance
Power Field-Effect Transistor, 3.6A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:3.6A; On Resistance, Rds(on):90mohm; Rds(on) Test Voltage, Vgs:30V; Package/Case:8-SO; Power Dissipation, Pd:2.5W ;RoHS Compliant: Yes
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
MOSFET, N-CH, 150V, 3.6A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.6A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.09ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5.5V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Product Comparison

The three parts on the right have similar specifications to IRF7451TRPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Current Rating

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Drain to Source Voltage (Vdss)

Surface Mount

Additional Feature

HTS Code

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Resistance

Element Configuration

Output Current

Threshold Voltage

Dual Supply Voltage

Recovery Time

Nominal Vgs

REACH SVHC

View Compare
IRF7451TRPBF

Infineon Technologies

12 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

2004

Active

1 (Unlimited)

8

EAR99

150V

MOSFET (Metal Oxide)

DUAL

GULL WING

3.6A

1

SINGLE WITH BUILT-IN DIODE

2.5W Ta

ENHANCEMENT MODE

2.5W

10 ns

N-Channel

SWITCHING

90m Ω @ 2.2A, 10V

5.5V @ 250μA

990pF @ 25V

3.6A Ta

41nC @ 10V

4.2ns

10V

±30V

15 ns

17 ns

3.6A

30V

0.09Ohm

150V

29A

1.4986mm

4.9784mm

3.9878mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF7207TR

Infineon Technologies

-

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

2000

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

2.5W Tc

-

-

-

P-Channel

-

60m Ω @ 5.4A, 4.5V

700mV @ 250μA

780pF @ 15V

5.4A Tc

22nC @ 4.5V

-

2.7V 4.5V

±12V

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF7451TRPBF vs IRF7207TR
IRF7201TR

Infineon Technologies

-

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

2003

Obsolete

1 (Unlimited)

8

EAR99

-

MOSFET (Metal Oxide)

DUAL

GULL WING

-

1

SINGLE WITH BUILT-IN DIODE

2.5W Tc

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

30m Ω @ 7.3A, 10V

1V @ 250μA

550pF @ 25V

7.3A Tc

28nC @ 10V

-

4.5V 10V

±20V

-

-

-

-

0.03Ohm

-

58A

-

-

-

-

Non-RoHS Compliant

-

30V

YES

LOGIC LEVEL COMPATIBLE

8541.29.00.95

NOT SPECIFIED

NOT SPECIFIED

R-PDSO-G8

Not Qualified

MS-012AA

7.3A

30V

70 mJ

-

-

-

-

-

-

-

-

IRF7451TRPBF vs IRF7201TR
IRF7204TRPBF

Infineon Technologies

12 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

1997

Active

1 (Unlimited)

8

-

-20V

MOSFET (Metal Oxide)

DUAL

GULL WING

-5.3A

1

-

2.5W Tc

ENHANCEMENT MODE

2.5W

14 ns

P-Channel

SWITCHING

60m Ω @ 5.3A, 10V

2.5V @ 250μA

860pF @ 10V

5.3A Ta

25nC @ 10V

26ns

4.5V 10V

±12V

68 ns

100 ns

-5.3A

12V

-

-20V

-

1.4986mm

4.9784mm

3.9878mm

No

ROHS3 Compliant

Contains Lead, Lead Free

20V

-

LOGIC LEVEL COMPATIBLE

-

-

-

-

-

-

-

-

-

60mOhm

Single

5.3A

-2.5V

-20V

100 ns

-2.5 V

No SVHC

IRF7451TRPBF vs IRF7204TRPBF

Certification

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IRF7451TRPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRF7451TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 150V 3.6A 8-Pin SOIC T/R RoHS: Compliant	4531	1 $0.9394 10 $0.8329 25 $0.8294 100 $0.6818 250 $0.6798 500 $0.6082 1000 $0.5115 3000 $0.5106
IRF7451TRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 150V 3.6A 8SOIC RoHS: Compliant	6450	1 $1.56 10 $1.39 100 $1.1143 500 $0.88064 1000 $0.7107
IRF7451TRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 150V 3.6A 8SOIC RoHS: Compliant	6450	1 $1.56 10 $1.39 100 $1.1143 500 $0.88064 1000 $0.7107
IRF7451TRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 150V 3.6A 8-SOIC RoHS: Compliant	4000	4000 $0.64875
IRF7451TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 150V 3.6A 8-Pin SOIC T/R RoHS: Compliant	4531	17 $0.8329 25 $0.8294 100 $0.6818 250 $0.6798 500 $0.6082 1000 $0.5115 3000 $0.5106
IRF7451TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 150V 3.6A 8-Pin SOIC T/R RoHS: Compliant	4000	4000 $0.4524
IRF7451TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 150V 3.6A 8-Pin SOIC T/R - Tape RoHS: Compliant	4000	4000 $0.5309 8000 $0.5119 16000 $0.4929 24000 $0.4769 40000 $0.4679
IRF7451TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 150V 3.6A 8-Pin SOIC T/R - Cut T RoHS: Compliant	2980	1 $0.4559 40 $0.4549 100 $0.4539 200 $0.4519 500 $0.4509 1000 $0.4499 2000 $0.4489
IRF7451TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 150V 3.6A 8-Pin SOIC T/R (Alt: I RoHS: Compliant	0
IRF7451TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 150V 3.6A 8-Pin SOIC T/R (Alt: S RoHS: Compliant	0	4000 $0.5749 8000 $0.4699 16000 $0.4309 24000 $0.3979 40000 $0.3699
IRF7451TRPBF DISTI #	Infineon Technologies AG	MOSFET, N-CH, 150V, 3.6A, SOIC, Transistor Polari	2196	1 $1.24 10 $1.05 25 $0.969 50 $0.888 100 $0.807 250 $0.76 500 $0.713 1000 $0.563
IRF7451TRPBF DISTI #	Infineon Technologies AG	MOSFET, 150V, 3.6A, 90 MOHM, 28 NC QG, SO-8 RoHS: Compliant	0	4000 $1.61 8000 $1.578 20000 $1.53 40000 $1.465 100000 $1.369
IRF7451TRPBF DISTI #	International Rectifier	RoHS: Not Compliant	12000	1 $0.69 25 $0.64 100 $0.61 500 $0.59 1000 $0.56
IRF7451TRPBF DISTI #	Infineon Technologies AG	MOSFET MOSFT 150V 3.6A 90mOhm 28nC RoHS: Compliant	2470	1 $1.24 10 $1.05 100 $0.807 500 $0.713 1000 $0.563 4000 $0.499
IRF7451TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 150V 3.6A 8-Pin SOIC T/R RoHS: Compliant	4000	4000 $0.517
IRF7451TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 150V 3.6A 8-Pin SOIC T/R RoHS: Compliant	4531	10 $0.8329 25 $0.8295 100 $0.682 250 $0.6798
IRF7451TRPBF DISTI #	Infineon Technologies AG	MOSFET, N-CH, 150V, 3.6A, SOIC RoHS: Compliant	2236	5 $0.891 25 $0.803 100 $0.617 250 $0.581 500 $0.544
IRF7451TRPBF DISTI #	Infineon Technologies AG	MOSFET, N-CH, 150V, 3.6A, SOIC RoHS: Compliant	2196	1 $1.97 10 $1.66 100 $1.29 500 $1.13 1000 $0.891 4000 $0.794

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Infineon Technologies IRF7451TRPBF

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