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IRF7424TRPBF

Infineon Technologies IRF7424TRPBF

Part Number:
IRF7424TRPBF
Manufacturer:
Infineon Technologies
Ventron No:
2849256-IRF7424TRPBF
Description:
MOSFET P-CH 30V 11A 8-SOIC
ECAD Model:
Datasheet:
IRF7424TRPBF

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Specifications
Infineon Technologies IRF7424TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7424TRPBF.
  • Factory Lead Time
    12 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2004
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    13.5MOhm
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -30V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    -11A
  • Number of Elements
    1
  • Row Spacing
    6.3 mm
  • Number of Channels
    1
  • Power Dissipation-Max
    2.5W Ta
  • Element Configuration
    Single
  • Power Dissipation
    2.5W
  • Turn On Delay Time
    15 ns
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    13.5m Ω @ 11A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4030pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    11A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    110nC @ 10V
  • Rise Time
    23ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Forward Voltage
    -1.2V
  • Fall Time (Typ)
    76 ns
  • Turn-Off Delay Time
    150 ns
  • Continuous Drain Current (ID)
    -11A
  • Threshold Voltage
    -2.5V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -30V
  • Dual Supply Voltage
    -30V
  • Recovery Time
    60 ns
  • Max Junction Temperature (Tj)
    150°C
  • Nominal Vgs
    -2.5 V
  • Height
    1.75mm
  • Length
    4.9784mm
  • Width
    4.05mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRF7424TRPBF Description
The exceptionally low on-resistance per silicon area of these P-Channel MOSFETs from International Rectifier is the result of sophisticated processing procedures. This advantage gives the designer access to a highly effective tool for use in load and battery management applications. The SO-8 has been altered by way of a unique leadframe, resulting in improved thermal properties and multiple-die capabilities, making it perfect for a range of power applications. These upgrades allow for the usage of many devices while drastically reducing board space in an application. The container is made for wave, infrared, or vapor phase soldering.

IRF7424TRPBF Features
? very little on-resistance
? very low Qg and Qgd
? Significant drain current operating
? Extremely tiny footprint (0402 case size) - 1.0 mm × 0.6 mm
? Extremely low-profile

IRF7424TRPBF Applications
Switching applications
IRF7424TRPBF More Descriptions
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 13.5 Milliohms;ID -11A;SO-8;PD 2.5W;gFS 17S
Benefits: RoHS Compliant; Industry-leading quality; Industry-Standard Pinout; P-Channel MOSFET
Single P-Channel 30V 22 mOhm 110 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R - Tape and Reel
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHSInfineon SCT
Power Field-Effect Transistor, 11A I(D), 30V, 0.0135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
P CHANNEL MOSFET, 11A; Transistor Polarity: P Channel; Continuous Drain Current Id: -11A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.0135ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage V
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:-11A; Package/Case:8-SOIC; Power Dissipation, Pd:2.5W; Drain Source On Resistance @ 10V:13.5mohm; Drain Source On Resistance @ 4.5V:22mohm ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to IRF7424TRPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Termination
    ECCN Code
    Resistance
    Subcategory
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Row Spacing
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Forward Voltage
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Recovery Time
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Max Power Dissipation
    Input Capacitance
    Rds On Max
    Weight
    Pbfree Code
    Number of Terminations
    Operating Mode
    Case Connection
    Transistor Application
    JEDEC-95 Code
    DS Breakdown Voltage-Min
    Additional Feature
    Terminal Position
    Terminal Form
    Output Current
    View Compare
  • IRF7424TRPBF
    IRF7424TRPBF
    Infineon Technologies
    12 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    Active
    1 (Unlimited)
    SMD/SMT
    EAR99
    13.5MOhm
    Other Transistors
    -30V
    MOSFET (Metal Oxide)
    -11A
    1
    6.3 mm
    1
    2.5W Ta
    Single
    2.5W
    15 ns
    P-Channel
    13.5m Ω @ 11A, 10V
    2.5V @ 250μA
    4030pF @ 25V
    11A Ta
    110nC @ 10V
    23ns
    30V
    4.5V 10V
    ±20V
    -1.2V
    76 ns
    150 ns
    -11A
    -2.5V
    20V
    -30V
    -30V
    60 ns
    150°C
    -2.5 V
    1.75mm
    4.9784mm
    4.05mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF710L
    IRF710L
    Vishay Siliconix
    -
    -
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    -
    -55°C~150°C TJ
    Tube
    -
    2016
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    N-Channel
    3.6Ohm @ 1.2A, 10V
    4V @ 250μA
    170pF @ 25V
    2A Tc
    17nC @ 10V
    -
    400V
    10V
    ±20V
    -
    -
    -
    2A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    I2PAK
    3.1W
    170pF
    3.6 Ω
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRF7424TRPBF vs IRF710L
  • IRF720LPBF
    IRF720LPBF
    Vishay Siliconix
    12 Weeks
    -
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    3
    SILICON
    -55°C~150°C TJ
    Tube
    -
    2017
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    1
    -
    1
    3.1W Ta 50W Tc
    Single
    -
    10 ns
    N-Channel
    1.8 Ω @ 2A, 10V
    4V @ 250μA
    410pF @ 25V
    3.3A Tc
    20nC @ 10V
    14ns
    400V
    10V
    ±20V
    -
    13 ns
    30 ns
    3.3A
    -
    20V
    -
    -
    -
    -
    -
    9.01mm
    10.41mm
    4.7mm
    -
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    6.000006g
    yes
    3
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    TO-220AB
    400V
    -
    -
    -
    -
    IRF7424TRPBF vs IRF720LPBF
  • IRF7204TRPBF
    IRF7204TRPBF
    Infineon Technologies
    12 Weeks
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    1997
    Active
    1 (Unlimited)
    -
    -
    60mOhm
    -
    -20V
    MOSFET (Metal Oxide)
    -5.3A
    1
    -
    -
    2.5W Tc
    Single
    2.5W
    14 ns
    P-Channel
    60m Ω @ 5.3A, 10V
    2.5V @ 250μA
    860pF @ 10V
    5.3A Ta
    25nC @ 10V
    26ns
    20V
    4.5V 10V
    ±12V
    -
    68 ns
    100 ns
    -5.3A
    -2.5V
    12V
    -20V
    -20V
    100 ns
    -
    -2.5 V
    1.4986mm
    4.9784mm
    3.9878mm
    No SVHC
    No
    ROHS3 Compliant
    Contains Lead, Lead Free
    -
    -
    -
    -
    -
    -
    8
    ENHANCEMENT MODE
    -
    SWITCHING
    -
    -
    LOGIC LEVEL COMPATIBLE
    DUAL
    GULL WING
    5.3A
    IRF7424TRPBF vs IRF7204TRPBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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