Vishay Siliconix IRF740AS
- Part Number:
- IRF740AS
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2488274-IRF740AS
- Description:
- MOSFET N-CH 400V 10A D2PAK
- Datasheet:
- IRF740AS
Vishay Siliconix IRF740AS technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF740AS.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Supplier Device PackageD2PAK
- Weight1.437803g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2014
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC400V
- TechnologyMOSFET (Metal Oxide)
- Current Rating10A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max3.1W Ta 125W Tc
- Element ConfigurationSingle
- Power Dissipation3.1W
- Turn On Delay Time10 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs550mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1030pF @ 25V
- Current - Continuous Drain (Id) @ 25°C10A Tc
- Gate Charge (Qg) (Max) @ Vgs36nC @ 10V
- Rise Time35ns
- Drain to Source Voltage (Vdss)400V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)22 ns
- Turn-Off Delay Time24 ns
- Continuous Drain Current (ID)10A
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage400V
- Input Capacitance1.03nF
- Drain to Source Resistance550mOhm
- Rds On Max550 mΩ
- Height4.83mm
- Length10.67mm
- Width9.65mm
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRF740AS Overview
A device's maximum input capacitance is 1030pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 10A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=400V, and this device has a drain-to-source breakdown voltage of 400V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 24 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 550mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 400V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRF740AS Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 24 ns
single MOSFETs transistor is 550mOhm
a 400V drain to source voltage (Vdss)
IRF740AS Applications
There are a lot of Vishay Siliconix
IRF740AS applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 1030pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 10A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=400V, and this device has a drain-to-source breakdown voltage of 400V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 24 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 550mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 400V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRF740AS Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 24 ns
single MOSFETs transistor is 550mOhm
a 400V drain to source voltage (Vdss)
IRF740AS Applications
There are a lot of Vishay Siliconix
IRF740AS applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRF740AS More Descriptions
Trans MOSFET N-CH 400V 10A 3-Pin(2 Tab) D2PAK
400V N-CH HEXFET MOSFET,D2-PAK
400V N-CH HEXFET MOSFET,D2-PAK
The three parts on the right have similar specifications to IRF740AS.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningRoHS StatusLead FreeSeriesResistanceMax Power DissipationView Compare
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IRF740ASSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3D2PAK1.437803g-55°C~150°C TJTube2014Obsolete1 (Unlimited)150°C-55°C400VMOSFET (Metal Oxide)10A113.1W Ta 125W TcSingle3.1W10 nsN-Channel550mOhm @ 6A, 10V4V @ 250μA1030pF @ 25V10A Tc36nC @ 10V35ns400V10V±30V22 ns24 ns10A30V400V1.03nF550mOhm550 mΩ4.83mm10.67mm9.65mmNoNon-RoHS CompliantContains Lead----
-
Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)88-SO--55°C~150°C TJTube2004Obsolete1 (Unlimited)150°C-55°C-12VMOSFET (Metal Oxide)-9.5A1-2.5W Ta-2.5W-P-Channel20mOhm @ 9.5A, 4.5V600mV @ 250μA6000pF @ 10V9.5A Ta74nC @ 5V540ns12V2.5V 4.5V±12V370 ns77 ns-9.5A12V-12V6nF20mOhm20 mΩ---NoRoHS CompliantLead FreeHEXFET®20MOhm-
-
-Surface Mount8-SOIC (0.154, 3.90mm Width)----55°C~150°C TJTape & Reel (TR)2000Obsolete1 (Unlimited)---MOSFET (Metal Oxide)---2.5W Tc---P-Channel60m Ω @ 5.4A, 4.5V700mV @ 250μA780pF @ 15V5.4A Tc22nC @ 4.5V-20V2.7V 4.5V±12V------------Non-RoHS Compliant-HEXFET®--
-
Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA-I2PAK--55°C~150°C TJTube2016Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-------N-Channel3.6Ohm @ 1.2A, 10V4V @ 250μA170pF @ 25V2A Tc17nC @ 10V-400V10V±20V--2A--170pF-3.6 Ω----Non-RoHS Compliant---3.1W
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