IRF740AS

Vishay Siliconix IRF740AS

Part Number:
IRF740AS
Manufacturer:
Vishay Siliconix
Ventron No:
2488274-IRF740AS
Description:
MOSFET N-CH 400V 10A D2PAK
ECAD Model:
Datasheet:
IRF740AS

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Specifications
Vishay Siliconix IRF740AS technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF740AS.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Supplier Device Package
    D2PAK
  • Weight
    1.437803g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2014
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    400V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    10A
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    3.1W Ta 125W Tc
  • Element Configuration
    Single
  • Power Dissipation
    3.1W
  • Turn On Delay Time
    10 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    550mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1030pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    10A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    36nC @ 10V
  • Rise Time
    35ns
  • Drain to Source Voltage (Vdss)
    400V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    22 ns
  • Turn-Off Delay Time
    24 ns
  • Continuous Drain Current (ID)
    10A
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    400V
  • Input Capacitance
    1.03nF
  • Drain to Source Resistance
    550mOhm
  • Rds On Max
    550 mΩ
  • Height
    4.83mm
  • Length
    10.67mm
  • Width
    9.65mm
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
IRF740AS Overview
A device's maximum input capacitance is 1030pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 10A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=400V, and this device has a drain-to-source breakdown voltage of 400V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 24 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 550mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 400V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IRF740AS Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 24 ns
single MOSFETs transistor is 550mOhm
a 400V drain to source voltage (Vdss)


IRF740AS Applications
There are a lot of Vishay Siliconix
IRF740AS applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRF740AS More Descriptions
Trans MOSFET N-CH 400V 10A 3-Pin(2 Tab) D2PAK
400V N-CH HEXFET MOSFET,D2-PAK
Product Comparison
The three parts on the right have similar specifications to IRF740AS.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Series
    Resistance
    Max Power Dissipation
    View Compare
  • IRF740AS
    IRF740AS
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    D2PAK
    1.437803g
    -55°C~150°C TJ
    Tube
    2014
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    400V
    MOSFET (Metal Oxide)
    10A
    1
    1
    3.1W Ta 125W Tc
    Single
    3.1W
    10 ns
    N-Channel
    550mOhm @ 6A, 10V
    4V @ 250μA
    1030pF @ 25V
    10A Tc
    36nC @ 10V
    35ns
    400V
    10V
    ±30V
    22 ns
    24 ns
    10A
    30V
    400V
    1.03nF
    550mOhm
    550 mΩ
    4.83mm
    10.67mm
    9.65mm
    No
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
  • IRF7233PBF
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    8-SO
    -
    -55°C~150°C TJ
    Tube
    2004
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    -12V
    MOSFET (Metal Oxide)
    -9.5A
    1
    -
    2.5W Ta
    -
    2.5W
    -
    P-Channel
    20mOhm @ 9.5A, 4.5V
    600mV @ 250μA
    6000pF @ 10V
    9.5A Ta
    74nC @ 5V
    540ns
    12V
    2.5V 4.5V
    ±12V
    370 ns
    77 ns
    -9.5A
    12V
    -12V
    6nF
    20mOhm
    20 mΩ
    -
    -
    -
    No
    RoHS Compliant
    Lead Free
    HEXFET®
    20MOhm
    -
  • IRF7207TR
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2000
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    2.5W Tc
    -
    -
    -
    P-Channel
    60m Ω @ 5.4A, 4.5V
    700mV @ 250μA
    780pF @ 15V
    5.4A Tc
    22nC @ 4.5V
    -
    20V
    2.7V 4.5V
    ±12V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    HEXFET®
    -
    -
  • IRF710L
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    I2PAK
    -
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    N-Channel
    3.6Ohm @ 1.2A, 10V
    4V @ 250μA
    170pF @ 25V
    2A Tc
    17nC @ 10V
    -
    400V
    10V
    ±20V
    -
    -
    2A
    -
    -
    170pF
    -
    3.6 Ω
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    3.1W
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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