Infineon Technologies IRF7322D1TR
- Part Number:
- IRF7322D1TR
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3071648-IRF7322D1TR
- Description:
- MOSFET P-CH 20V 5.3A 8-SOIC
- ECAD Model:
-
- Datasheet:
- IRF7322D1TR
Infineon Technologies IRF7322D1TR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7322D1TR.
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Supplier Device Package8-SO
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesFETKY™
- Published2004
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max2W Ta
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs62mOhm @ 2.9A, 4.5V
- Vgs(th) (Max) @ Id700mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds780pF @ 15V
- Current - Continuous Drain (Id) @ 25°C5.3A Ta
- Gate Charge (Qg) (Max) @ Vgs29nC @ 4.5V
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)2.7V 4.5V
- Vgs (Max)±12V
- FET FeatureSchottky Diode (Isolated)
- RoHS StatusNon-RoHS Compliant
IRF7322D1TR Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 780pF @ 15V.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (2.7V 4.5V).
IRF7322D1TR Features
a 20V drain to source voltage (Vdss)
IRF7322D1TR Applications
There are a lot of Infineon Technologies
IRF7322D1TR applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 780pF @ 15V.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (2.7V 4.5V).
IRF7322D1TR Features
a 20V drain to source voltage (Vdss)
IRF7322D1TR Applications
There are a lot of Infineon Technologies
IRF7322D1TR applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IRF7322D1TR More Descriptions
-20V FETKY - MOSFET and Schottky Diode in a SO-8 package
MOSFET P-CH 20V 5.3A 8-SOIC
MOSFET P-CH 20V 5.3A 8-SOIC
The three parts on the right have similar specifications to IRF7322D1TR.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)FET FeatureRoHS StatusSurface MountTransistor Element MaterialNumber of TerminationsECCN CodeAdditional FeatureHTS CodeTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeTransistor ApplicationJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Factory Lead TimeMountNumber of PinsWeightPbfree CodeNumber of ChannelsElement ConfigurationCase ConnectionTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)HeightLengthWidthRadiation HardeningView Compare
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IRF7322D1TRSurface Mount8-SOIC (0.154, 3.90mm Width)8-SO-55°C~150°C TJTape & Reel (TR)FETKY™2004Obsolete1 (Unlimited)MOSFET (Metal Oxide)2W TaP-Channel62mOhm @ 2.9A, 4.5V700mV @ 250μA780pF @ 15V5.3A Ta29nC @ 4.5V20V2.7V 4.5V±12VSchottky Diode (Isolated)Non-RoHS Compliant----------------------------------------- -
Surface Mount8-SOIC (0.154, 3.90mm Width)--55°C~150°C TJTape & Reel (TR)HEXFET®2000Obsolete1 (Unlimited)MOSFET (Metal Oxide)2.5W TcP-Channel60m Ω @ 5.4A, 4.5V700mV @ 250μA780pF @ 15V5.4A Tc22nC @ 4.5V20V2.7V 4.5V±12V-Non-RoHS Compliant----------------------------------------
-
Surface Mount8-SOIC (0.154, 3.90mm Width)--55°C~150°C TJTape & Reel (TR)HEXFET®2003Obsolete1 (Unlimited)MOSFET (Metal Oxide)2.5W TcN-Channel30m Ω @ 7.3A, 10V1V @ 250μA550pF @ 25V7.3A Tc28nC @ 10V30V4.5V 10V±20V-Non-RoHS CompliantYESSILICON8EAR99LOGIC LEVEL COMPATIBLE8541.29.00.95DUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G8Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODESWITCHINGMS-012AA7.3A0.03Ohm58A30V70 mJ------------------
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Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA--55°C~150°C TJTube-2017Active1 (Unlimited)MOSFET (Metal Oxide)3.1W Ta 50W TcN-Channel1.8 Ω @ 2A, 10V4V @ 250μA410pF @ 25V3.3A Tc20nC @ 10V400V10V±20V-ROHS3 Compliant-SILICON3---------1-ENHANCEMENT MODESWITCHINGTO-220AB---400V-12 WeeksThrough Hole36.000006gyes1SingleDRAIN10 ns14ns13 ns30 ns3.3A20V9.01mm10.41mm4.7mmNo
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