Vishay Siliconix IRF730PBF

Name: IRF730PBF
Brand: Vishay Siliconix
SKU: 3070250-IRF730PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF730PBF

Manufacturer:: Vishay Siliconix

Ventron No:: 3070250-IRF730PBF

Description:: MOSFET N-CH 400V 5.5A TO-220AB

ECAD Model:

Datasheet:: IRF730PBF

Specifications

Vishay Siliconix IRF730PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF730PBF.

Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220AB
Weight
6.000006g
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2011
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
1Ohm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
400V
Technology
MOSFET (Metal Oxide)
Current Rating
5.5A
Number of Elements
1
Number of Channels
1
Voltage
400V
Power Dissipation-Max
74W Tc
Element Configuration
Single
Current
55A
Power Dissipation
74W
Turn On Delay Time
10 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
1Ohm @ 3.3A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
700pF @ 25V
Current - Continuous Drain (Id) @ 25°C
5.5A Tc
Gate Charge (Qg) (Max) @ Vgs
38nC @ 10V
Rise Time
15ns
Drain to Source Voltage (Vdss)
400V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
14 ns
Turn-Off Delay Time
38 ns
Continuous Drain Current (ID)
5.5A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
400V
Input Capacitance
700pF
Recovery Time
530 ns
Drain to Source Resistance
1Ohm
Rds On Max
1 Ω
Nominal Vgs
4 V
Height
9.01mm
Length
10.41mm
Width
4.7mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRF730PBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 700pF @ 25V.This device conducts a continuous drain current (ID) of 5.5A, which is the maximum continuous current transistor can conduct.Using VGS=400V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 400V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 38 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 1Ohm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 400V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRF730PBF Features
a continuous drain current (ID) of 5.5A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 38 ns
single MOSFETs transistor is 1Ohm
a threshold voltage of 4V
a 400V drain to source voltage (Vdss)

IRF730PBF Applications
There are a lot of Vishay Siliconix
IRF730PBF applications of single MOSFETs transistors.

Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching

IRF730PBF More Descriptions

Transistor MOSFET N-CH 400V 5.5A 3-Pin (3 Tab) TO-220AB
Single N-Channel 400 V 1 Ohms Flange Mount Power Mosfet - TO-220-3
SILICONIX THT MOSFET NFET 400V 5,5A 1Ω 150°C TO-220 IRF730PBF
N CHANNEL MOSFET, 400V, 5.5A TO-220; Tra; Transistor Polarity:N Channel; Continuous Drain Current Id:5.5A;
Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Mosfet, 400V, 5.5A To-220; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:5.5A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: No |Vishay IRF730PBF.
MOSFET, N, 400V, 5.5A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:400V; Current, Id Cont:5.5A; Resistance, Rds On:1ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:22A; Power Dissipation:74W; Power, Pd:74W; Thermal Resistance, Junction to Case A:1.7°C/W; Voltage, Vds Max:400V

Product Comparison

The three parts on the right have similar specifications to IRF730PBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Resistance

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Number of Channels

Voltage

Power Dissipation-Max

Element Configuration

Current

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Recovery Time

Drain to Source Resistance

Rds On Max

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Transistor Element Material

Series

Number of Terminations

ECCN Code

Additional Feature

HTS Code

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Operating Mode

Transistor Application

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Subcategory

Reach Compliance Code

Pin Count

Case Connection

Pbfree Code

View Compare
IRF730PBF

Vishay Siliconix

12 Weeks

Through Hole

Through Hole

TO-220-3

3

TO-220AB

6.000006g

-55°C~150°C TJ

Tube

2011

Active

1 (Unlimited)

1Ohm

150°C

-55°C

400V

MOSFET (Metal Oxide)

5.5A

1

1

400V

74W Tc

Single

55A

74W

10 ns

N-Channel

1Ohm @ 3.3A, 10V

4V @ 250μA

700pF @ 25V

5.5A Tc

38nC @ 10V

15ns

400V

10V

±20V

14 ns

38 ns

5.5A

4V

20V

400V

700pF

530 ns

1Ohm

1 Ω

4 V

9.01mm

10.41mm

4.7mm

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF7201TR

Infineon Technologies

-

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2003

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

1

-

-

2.5W Tc

-

-

-

-

N-Channel

30m Ω @ 7.3A, 10V

1V @ 250μA

550pF @ 25V

7.3A Tc

28nC @ 10V

-

30V

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

YES

SILICON

HEXFET®

8

EAR99

LOGIC LEVEL COMPATIBLE

8541.29.00.95

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

R-PDSO-G8

Not Qualified

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

SWITCHING

MS-012AA

7.3A

0.03Ohm

58A

30V

70 mJ

-

-

-

-

-

IRF730PBF vs IRF7201TR
IRF720STRL

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2017

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

1

-

-

3.1W Ta 50W Tc

-

-

-

-

N-Channel

1.8 Ω @ 2A, 10V

4V @ 250μA

410pF @ 25V

3.3A Tc

20nC @ 10V

-

400V

10V

±20V

-

-

3.3A

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

SILICON

-

2

-

-

-

SINGLE

GULL WING

225

NOT SPECIFIED

R-PSSO-G2

Not Qualified

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

SWITCHING

-

-

-

13A

400V

190 mJ

FET General Purpose Power

unknown

3

DRAIN

-

IRF730PBF vs IRF720STRL
IRF720LPBF

Vishay Siliconix

12 Weeks

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

3

-

6.000006g

-55°C~150°C TJ

Tube

2017

Active

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

1

1

-

3.1W Ta 50W Tc

Single

-

-

10 ns

N-Channel

1.8 Ω @ 2A, 10V

4V @ 250μA

410pF @ 25V

3.3A Tc

20nC @ 10V

14ns

400V

10V

±20V

13 ns

30 ns

3.3A

-

20V

-

-

-

-

-

-

9.01mm

10.41mm

4.7mm

-

No

ROHS3 Compliant

-

-

SILICON

-

3

-

-

-

-

-

-

-

-

-

-

ENHANCEMENT MODE

SWITCHING

TO-220AB

-

-

-

400V

-

-

-

-

DRAIN

yes

IRF730PBF vs IRF720LPBF

Certification

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IRF730PBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRF730PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 400V 5.5A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	800	1 $1.168 10 $0.9895 100 $0.778 500 $0.679 1000 $0.5234 2500 $0.489 5000 $0.4275 10000 $0.4238
IRF730PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 400V 5.5A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	285	1 $1.168 10 $0.9895 100 $0.778 500 $0.679 1000 $0.5234 2500 $0.489 5000 $0.4275 10000 $0.4238
IRF730PBF DISTI #	Vishay Siliconix	MOSFET N-CH 400V 5.5A TO-220AB RoHS: Compliant	3732	1 $1.54 50 $1.2286 100 $1.075 500 $0.8337 1000 $0.65819
IRF730PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 400V 5.5A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	428000	1000 $0.5287
IRF730PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 400V 5.5A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	800	13 $0.9895 100 $0.778 500 $0.679
IRF730PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 400V 5.5A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	721	8 $3.5827 10 $1.8233 50 $1.4917 100 $1.2686 250 $1.1182
IRF730PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 400V 5.5A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	285	14 $0.9895 100 $0.778
IRF730PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 400V 5.5A 3-Pin(3 Tab) TO-220AB RoHS: Not Compliant	1440	1 $0.5779 10 $0.5649 25 $0.5509 50 $0.5289 100 $0.5049 500 $0.4939 1000 $0.4819
IRF730PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 400V 5.5A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	900	1 $1.1169 10 $0.9279 25 $0.9259 50 $0.9239 100 $0.7039 500 $0.6049 1000 $0.4779
IRF730PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 400V 5.5A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	0
IRF730PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 400V 5.5A 3-Pin(3 Tab) TO-220AB RoHS: Not Compliant	0	1 $1.31 10 $1.08 25 $0.994 50 $0.909 100 $0.823 500 $0.708 1000 $0.646
IRF730PBF DISTI #	Vishay Intertechnologies	N CHANNEL MOSFET, 400V, 5.5A TO-220, Transistor P	1231	1 $1.31 10 $1.08 25 $0.994 50 $0.909 100 $0.823 500 $0.708 1000 $0.646 2500 $0.627
IRF730PBF. DISTI #	Vishay Intertechnologies	MOSFET N-CHANNEL 400V ROHS COMPLIANT: NO	0	1 $1.34 10 $1.1 25 $1.02 50 $0.909 100 $0.823 500 $0.708 1000 $0.646 2500 $0.627
IRF730PBF DISTI #	Vishay Intertechnologies	MOSFET, Power, N-Ch, VDSS 400V, RDS(ON) 1Ohm, RoHS: Compliant	551	1 $1.065 25 $1.008 100 $0.959 250 $0.911 500 $0.87
IRF730PBF DISTI #	Vishay Siliconix	N-Chan 400V 5.5 Amp RoHS: Compliant	0	1000 $2.118 2000 $1.681
IRF730PBF DISTI #	Vishay Intertechnologies	MOSFET N-Chan 400V 5.5 Amp RoHS: Compliant	7624	1 $1.31 10 $1.08 100 $0.823 500 $0.708 1000 $0.559 2500 $0.522 5000 $0.496 10000 $0.477
IRF730PBF DISTI #	Vishay Intertechnologies	Single N-Channel 400 V 1 Ohms Flange Mount Power M RoHS: Compliant	37500	20 $0.505 750 $0.48
IRF730PBF DISTI #	Vishay Intertechnologies	Transistor: N-MOSFET, unipolar, 400V, 3.5A, 74	378	1 $0.65 3 $0.57 10 $0.5 50 $0.45 250 $0.42
IRF730PBF DISTI #	Vishay Intertechnologies	N-Ch 400V 5,5A 74W 1R TO220AB RoHS: Compliant	4175	25 $0.502 100 $0.422 300 $0.382 500 $0.368
IRF730PBF DISTI #	Vishay Intertechnologies	INSTOCK	1750
IRF730PBF DISTI #	Vishay Intertechnologies	MOSFET N-Chan 400V 5.5 Amp RoHS: Compliant	4100	50 $0.66 100 $0.584 250 $0.531 500 $0.519 1000 $0.491
IRF730PBF DISTI #	Vishay Intertechnologies	MOSFET, N, 400V, 5.5A, TO-220 RoHS: Compliant	2176	1 $2.07 10 $1.72 100 $1.37
IRF730PBF. DISTI #	Vishay Intertechnologies	N CHANNEL MOSFET, 400V, 5.5A TO-220 RoHS: Compliant	1255	1 $2.07 10 $1.72 100 $1.31 500 $1.13 1000 $0.982
IRF730PBF DISTI #	Vishay Intertechnologies	MOSFET, N, 400V, 5.5A, TO-220 RoHS: Compliant	1959	1 $1.15 10 $0.89 100 $0.851 250 $0.812 500 $0.773
IRF730PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 400V 5.5A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	721	1 $2.81 10 $1.43 50 $1.17 100 $0.995 250 $0.877
IRF730PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 400V 5.5A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	413	10 $0.9895 100 $0.778
IRF730PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 400V 5.5A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	4745	5 $1.12 25 $0.82 50 $0.731 100 $0.615 500 $0.552 1000 $0.51
IRF730PBF DISTI #	Vishay Intertechnologies	TO-220AB RoHS: Compliant	10656	1900 $0.3714 10656 $0.3467
IRF730PBF DISTI #	Vishay Siliconix	RoHS: Compliant	26819	200 $1.01 26819 $0.9182

IRF730P~~(1)~~
IRF730~~(70)~~
IRF73~~(73)~~
IRF7~~(80)~~
IRF~~(69)~~

Vishay Siliconix IRF730PBF

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