IRF730A

Vishay Siliconix IRF730A

Part Number:
IRF730A
Manufacturer:
Vishay Siliconix
Ventron No:
2851388-IRF730A
Description:
MOSFET N-CH 400V 5.5A TO-220AB
ECAD Model:
Datasheet:
IRF730A

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Vishay Siliconix IRF730A technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF730A.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-220AB
  • Weight
    6.000006g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2009
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    400V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    5.5A
  • Number of Channels
    1
  • Power Dissipation-Max
    74W Tc
  • Element Configuration
    Single
  • Turn On Delay Time
    10 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    1Ohm @ 3.3A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    600pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    5.5A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    22nC @ 10V
  • Rise Time
    22ns
  • Drain to Source Voltage (Vdss)
    400V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    16 ns
  • Turn-Off Delay Time
    20 ns
  • Continuous Drain Current (ID)
    5.5A
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    400V
  • Input Capacitance
    600pF
  • Drain to Source Resistance
    1Ohm
  • Rds On Max
    1 Ω
  • Height
    9.01mm
  • Length
    10.41mm
  • Width
    4.7mm
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
IRF730A Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 600pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 5.5A amps.In this device, the drain-source breakdown voltage is 400V and VGS=400V, so the drain-source breakdown voltage is 400V in this case.It is [20 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 1Ohm.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you will need a 400V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IRF730A Features
a continuous drain current (ID) of 5.5A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 20 ns
single MOSFETs transistor is 1Ohm
a 400V drain to source voltage (Vdss)


IRF730A Applications
There are a lot of Vishay Siliconix
IRF730A applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IRF730A More Descriptions
Trans MOSFET N-CH 400V 5.5A 3-Pin (3 Tab) TO-220AB
Product Comparison
The three parts on the right have similar specifications to IRF730A.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    RoHS Status
    Lead Free
    Series
    Resistance
    Number of Elements
    Power Dissipation
    Radiation Hardening
    Surface Mount
    Transistor Element Material
    Number of Terminations
    ECCN Code
    Additional Feature
    HTS Code
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Operating Mode
    Transistor Application
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Factory Lead Time
    Output Current
    Threshold Voltage
    Dual Supply Voltage
    Recovery Time
    Nominal Vgs
    REACH SVHC
    View Compare
  • IRF730A
    IRF730A
    Through Hole
    Through Hole
    TO-220-3
    3
    TO-220AB
    6.000006g
    -55°C~150°C TJ
    Tube
    2009
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    400V
    MOSFET (Metal Oxide)
    5.5A
    1
    74W Tc
    Single
    10 ns
    N-Channel
    1Ohm @ 3.3A, 10V
    4.5V @ 250μA
    600pF @ 25V
    5.5A Tc
    22nC @ 10V
    22ns
    400V
    10V
    ±30V
    16 ns
    20 ns
    5.5A
    30V
    400V
    600pF
    1Ohm
    1 Ω
    9.01mm
    10.41mm
    4.7mm
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF7233PBF
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    8-SO
    -
    -55°C~150°C TJ
    Tube
    2004
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    -12V
    MOSFET (Metal Oxide)
    -9.5A
    -
    2.5W Ta
    -
    -
    P-Channel
    20mOhm @ 9.5A, 4.5V
    600mV @ 250μA
    6000pF @ 10V
    9.5A Ta
    74nC @ 5V
    540ns
    12V
    2.5V 4.5V
    ±12V
    370 ns
    77 ns
    -9.5A
    12V
    -12V
    6nF
    20mOhm
    20 mΩ
    -
    -
    -
    RoHS Compliant
    Lead Free
    HEXFET®
    20MOhm
    1
    2.5W
    No
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF7201TR
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2003
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    2.5W Tc
    -
    -
    N-Channel
    30m Ω @ 7.3A, 10V
    1V @ 250μA
    550pF @ 25V
    7.3A Tc
    28nC @ 10V
    -
    30V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    HEXFET®
    -
    1
    -
    -
    YES
    SILICON
    8
    EAR99
    LOGIC LEVEL COMPATIBLE
    8541.29.00.95
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    R-PDSO-G8
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    SWITCHING
    MS-012AA
    7.3A
    0.03Ohm
    58A
    30V
    70 mJ
    -
    -
    -
    -
    -
    -
    -
  • IRF7204TRPBF
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    1997
    Active
    1 (Unlimited)
    -
    -
    -20V
    MOSFET (Metal Oxide)
    -5.3A
    -
    2.5W Tc
    Single
    14 ns
    P-Channel
    60m Ω @ 5.3A, 10V
    2.5V @ 250μA
    860pF @ 10V
    5.3A Ta
    25nC @ 10V
    26ns
    20V
    4.5V 10V
    ±12V
    68 ns
    100 ns
    -5.3A
    12V
    -20V
    -
    -
    -
    1.4986mm
    4.9784mm
    3.9878mm
    ROHS3 Compliant
    Contains Lead, Lead Free
    HEXFET®
    60mOhm
    1
    2.5W
    No
    -
    SILICON
    8
    -
    LOGIC LEVEL COMPATIBLE
    -
    DUAL
    GULL WING
    -
    -
    -
    -
    -
    ENHANCEMENT MODE
    SWITCHING
    -
    -
    -
    -
    -
    -
    12 Weeks
    5.3A
    -2.5V
    -20V
    100 ns
    -2.5 V
    No SVHC
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.