Vishay Siliconix IRF730A
- Part Number:
- IRF730A
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2851388-IRF730A
- Description:
- MOSFET N-CH 400V 5.5A TO-220AB
- Datasheet:
- IRF730A
Vishay Siliconix IRF730A technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF730A.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- Weight6.000006g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2009
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC400V
- TechnologyMOSFET (Metal Oxide)
- Current Rating5.5A
- Number of Channels1
- Power Dissipation-Max74W Tc
- Element ConfigurationSingle
- Turn On Delay Time10 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs1Ohm @ 3.3A, 10V
- Vgs(th) (Max) @ Id4.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds600pF @ 25V
- Current - Continuous Drain (Id) @ 25°C5.5A Tc
- Gate Charge (Qg) (Max) @ Vgs22nC @ 10V
- Rise Time22ns
- Drain to Source Voltage (Vdss)400V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)16 ns
- Turn-Off Delay Time20 ns
- Continuous Drain Current (ID)5.5A
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage400V
- Input Capacitance600pF
- Drain to Source Resistance1Ohm
- Rds On Max1 Ω
- Height9.01mm
- Length10.41mm
- Width4.7mm
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRF730A Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 600pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 5.5A amps.In this device, the drain-source breakdown voltage is 400V and VGS=400V, so the drain-source breakdown voltage is 400V in this case.It is [20 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 1Ohm.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you will need a 400V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRF730A Features
a continuous drain current (ID) of 5.5A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 20 ns
single MOSFETs transistor is 1Ohm
a 400V drain to source voltage (Vdss)
IRF730A Applications
There are a lot of Vishay Siliconix
IRF730A applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 600pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 5.5A amps.In this device, the drain-source breakdown voltage is 400V and VGS=400V, so the drain-source breakdown voltage is 400V in this case.It is [20 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 1Ohm.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you will need a 400V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRF730A Features
a continuous drain current (ID) of 5.5A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 20 ns
single MOSFETs transistor is 1Ohm
a 400V drain to source voltage (Vdss)
IRF730A Applications
There are a lot of Vishay Siliconix
IRF730A applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IRF730A More Descriptions
Trans MOSFET N-CH 400V 5.5A 3-Pin (3 Tab) TO-220AB
The three parts on the right have similar specifications to IRF730A.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ChannelsPower Dissipation-MaxElement ConfigurationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRoHS StatusLead FreeSeriesResistanceNumber of ElementsPower DissipationRadiation HardeningSurface MountTransistor Element MaterialNumber of TerminationsECCN CodeAdditional FeatureHTS CodeTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationOperating ModeTransistor ApplicationJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Factory Lead TimeOutput CurrentThreshold VoltageDual Supply VoltageRecovery TimeNominal VgsREACH SVHCView Compare
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IRF730AThrough HoleThrough HoleTO-220-33TO-220AB6.000006g-55°C~150°C TJTube2009Obsolete1 (Unlimited)150°C-55°C400VMOSFET (Metal Oxide)5.5A174W TcSingle10 nsN-Channel1Ohm @ 3.3A, 10V4.5V @ 250μA600pF @ 25V5.5A Tc22nC @ 10V22ns400V10V±30V16 ns20 ns5.5A30V400V600pF1Ohm1 Ω9.01mm10.41mm4.7mmNon-RoHS CompliantContains Lead----------------------------------
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Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)88-SO--55°C~150°C TJTube2004Obsolete1 (Unlimited)150°C-55°C-12VMOSFET (Metal Oxide)-9.5A-2.5W Ta--P-Channel20mOhm @ 9.5A, 4.5V600mV @ 250μA6000pF @ 10V9.5A Ta74nC @ 5V540ns12V2.5V 4.5V±12V370 ns77 ns-9.5A12V-12V6nF20mOhm20 mΩ---RoHS CompliantLead FreeHEXFET®20MOhm12.5WNo----------------------------
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-Surface Mount8-SOIC (0.154, 3.90mm Width)----55°C~150°C TJTape & Reel (TR)2003Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--2.5W Tc--N-Channel30m Ω @ 7.3A, 10V1V @ 250μA550pF @ 25V7.3A Tc28nC @ 10V-30V4.5V 10V±20V-----------Non-RoHS Compliant-HEXFET®-1--YESSILICON8EAR99LOGIC LEVEL COMPATIBLE8541.29.00.95DUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G8Not QualifiedSINGLE WITH BUILT-IN DIODEENHANCEMENT MODESWITCHINGMS-012AA7.3A0.03Ohm58A30V70 mJ-------
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Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8---55°C~150°C TJTape & Reel (TR)1997Active1 (Unlimited)---20VMOSFET (Metal Oxide)-5.3A-2.5W TcSingle14 nsP-Channel60m Ω @ 5.3A, 10V2.5V @ 250μA860pF @ 10V5.3A Ta25nC @ 10V26ns20V4.5V 10V±12V68 ns100 ns-5.3A12V-20V---1.4986mm4.9784mm3.9878mmROHS3 CompliantContains Lead, Lead FreeHEXFET®60mOhm12.5WNo-SILICON8-LOGIC LEVEL COMPATIBLE-DUALGULL WING-----ENHANCEMENT MODESWITCHING------12 Weeks5.3A-2.5V-20V100 ns-2.5 VNo SVHC
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