IRF7201

Infineon Technologies IRF7201

Part Number:
IRF7201
Manufacturer:
Infineon Technologies
Ventron No:
2492355-IRF7201
Description:
MOSFET N-CH 30V 7.3A 8-SOIC
ECAD Model:
Datasheet:
IRF7201

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Part Pictures
  • IRF7201 Detail Images
Specifications
Infineon Technologies IRF7201 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7201.
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    1998
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Terminal Finish
    NOT SPECIFIED
  • Additional Feature
    ULTRA LOW RESISTANCE
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PDSO-G8
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    2.5W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    30m Ω @ 7.3A, 10V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    550pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    7.3A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    28nC @ 10V
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • JEDEC-95 Code
    MS-012AA
  • Drain Current-Max (Abs) (ID)
    7.3A
  • Drain-source On Resistance-Max
    0.03Ohm
  • Pulsed Drain Current-Max (IDM)
    58A
  • DS Breakdown Voltage-Min
    30V
  • Avalanche Energy Rating (Eas)
    70 mJ
  • RoHS Status
    Non-RoHS Compliant
Description
IRF7201 Description
International Rectifier's Fifth Generation HEXFET? power MOSFETs use cutting-edge processing methods to produce extraordinarily low on-resistance per silicon area. This feature offers the designer a highly effective and dependable device for usage in a range of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET MOSFETs are widely known for. The SO-8 has been altered by way of a unique leadframe, resulting in improved thermal properties and multiple-die capabilities, making it perfect for a range of power applications. These upgrades allow for the usage of many devices while drastically reducing board space in an application. The container is made for wave, infrared, or vapor phase soldering methods. In a typical PCB mount application, it is possible to dissipate more power than 0.8W.

IRF7201 Features
Generation V Technology
Ultra Low On-Resistance
N-Channel MOSFET
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Lead-Free

IRF7201 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IRF7201 More Descriptions
Trans MOSFET N-CH 30V 7.3A 8-Pin SOIC
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
French Electronic Distributor since 1988
IRF7201 Detail Images
Product Comparison
The three parts on the right have similar specifications to IRF7201.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    Mount
    Supplier Device Package
    Max Power Dissipation
    Continuous Drain Current (ID)
    Input Capacitance
    Rds On Max
    Factory Lead Time
    Number of Pins
    Weight
    Pbfree Code
    Number of Channels
    Element Configuration
    Case Connection
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Gate to Source Voltage (Vgs)
    Height
    Length
    Width
    Radiation Hardening
    Resistance
    Voltage - Rated DC
    Current Rating
    Power Dissipation
    Output Current
    Threshold Voltage
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Recovery Time
    Nominal Vgs
    REACH SVHC
    Lead Free
    View Compare
  • IRF7201
    IRF7201
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    YES
    SILICON
    -55°C~150°C TJ
    Tube
    HEXFET®
    1998
    Obsolete
    1 (Unlimited)
    8
    EAR99
    NOT SPECIFIED
    ULTRA LOW RESISTANCE
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    R-PDSO-G8
    1
    SINGLE WITH BUILT-IN DIODE
    2.5W Tc
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    30m Ω @ 7.3A, 10V
    1V @ 250μA
    550pF @ 25V
    7.3A Tc
    28nC @ 10V
    30V
    4.5V 10V
    ±20V
    MS-012AA
    7.3A
    0.03Ohm
    58A
    30V
    70 mJ
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF710L
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    -
    -55°C~150°C TJ
    Tube
    -
    2016
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    N-Channel
    -
    3.6Ohm @ 1.2A, 10V
    4V @ 250μA
    170pF @ 25V
    2A Tc
    17nC @ 10V
    400V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Through Hole
    I2PAK
    3.1W
    2A
    170pF
    3.6 Ω
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF720LPBF
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    SILICON
    -55°C~150°C TJ
    Tube
    -
    2017
    Active
    1 (Unlimited)
    3
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    1
    -
    3.1W Ta 50W Tc
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    1.8 Ω @ 2A, 10V
    4V @ 250μA
    410pF @ 25V
    3.3A Tc
    20nC @ 10V
    400V
    10V
    ±20V
    TO-220AB
    -
    -
    -
    400V
    -
    ROHS3 Compliant
    Through Hole
    -
    -
    3.3A
    -
    -
    12 Weeks
    3
    6.000006g
    yes
    1
    Single
    DRAIN
    10 ns
    14ns
    13 ns
    30 ns
    20V
    9.01mm
    10.41mm
    4.7mm
    No
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF7204TRPBF
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    1997
    Active
    1 (Unlimited)
    8
    -
    -
    LOGIC LEVEL COMPATIBLE
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    -
    -
    1
    -
    2.5W Tc
    ENHANCEMENT MODE
    P-Channel
    SWITCHING
    60m Ω @ 5.3A, 10V
    2.5V @ 250μA
    860pF @ 10V
    5.3A Ta
    25nC @ 10V
    20V
    4.5V 10V
    ±12V
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Surface Mount
    -
    -
    -5.3A
    -
    -
    12 Weeks
    8
    -
    -
    -
    Single
    -
    14 ns
    26ns
    68 ns
    100 ns
    12V
    1.4986mm
    4.9784mm
    3.9878mm
    No
    60mOhm
    -20V
    -5.3A
    2.5W
    5.3A
    -2.5V
    -20V
    -20V
    100 ns
    -2.5 V
    No SVHC
    Contains Lead, Lead Free
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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