Infineon Technologies IRF7201
- Part Number:
- IRF7201
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2492355-IRF7201
- Description:
- MOSFET N-CH 30V 7.3A 8-SOIC
- Datasheet:
- IRF7201
Infineon Technologies IRF7201 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7201.
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHEXFET®
- Published1998
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishNOT SPECIFIED
- Additional FeatureULTRA LOW RESISTANCE
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PDSO-G8
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max2.5W Tc
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs30m Ω @ 7.3A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds550pF @ 25V
- Current - Continuous Drain (Id) @ 25°C7.3A Tc
- Gate Charge (Qg) (Max) @ Vgs28nC @ 10V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- JEDEC-95 CodeMS-012AA
- Drain Current-Max (Abs) (ID)7.3A
- Drain-source On Resistance-Max0.03Ohm
- Pulsed Drain Current-Max (IDM)58A
- DS Breakdown Voltage-Min30V
- Avalanche Energy Rating (Eas)70 mJ
- RoHS StatusNon-RoHS Compliant
IRF7201 Description
International Rectifier's Fifth Generation HEXFET? power MOSFETs use cutting-edge processing methods to produce extraordinarily low on-resistance per silicon area. This feature offers the designer a highly effective and dependable device for usage in a range of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET MOSFETs are widely known for. The SO-8 has been altered by way of a unique leadframe, resulting in improved thermal properties and multiple-die capabilities, making it perfect for a range of power applications. These upgrades allow for the usage of many devices while drastically reducing board space in an application. The container is made for wave, infrared, or vapor phase soldering methods. In a typical PCB mount application, it is possible to dissipate more power than 0.8W.
IRF7201 Features
Generation V Technology
Ultra Low On-Resistance
N-Channel MOSFET
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Lead-Free
IRF7201 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
International Rectifier's Fifth Generation HEXFET? power MOSFETs use cutting-edge processing methods to produce extraordinarily low on-resistance per silicon area. This feature offers the designer a highly effective and dependable device for usage in a range of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET MOSFETs are widely known for. The SO-8 has been altered by way of a unique leadframe, resulting in improved thermal properties and multiple-die capabilities, making it perfect for a range of power applications. These upgrades allow for the usage of many devices while drastically reducing board space in an application. The container is made for wave, infrared, or vapor phase soldering methods. In a typical PCB mount application, it is possible to dissipate more power than 0.8W.
IRF7201 Features
Generation V Technology
Ultra Low On-Resistance
N-Channel MOSFET
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Lead-Free
IRF7201 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IRF7201 More Descriptions
Trans MOSFET N-CH 30V 7.3A 8-Pin SOIC
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
French Electronic Distributor since 1988
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
French Electronic Distributor since 1988
The three parts on the right have similar specifications to IRF7201.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusMountSupplier Device PackageMax Power DissipationContinuous Drain Current (ID)Input CapacitanceRds On MaxFactory Lead TimeNumber of PinsWeightPbfree CodeNumber of ChannelsElement ConfigurationCase ConnectionTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeGate to Source Voltage (Vgs)HeightLengthWidthRadiation HardeningResistanceVoltage - Rated DCCurrent RatingPower DissipationOutput CurrentThreshold VoltageDrain to Source Breakdown VoltageDual Supply VoltageRecovery TimeNominal VgsREACH SVHCLead FreeView Compare
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IRF7201Surface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~150°C TJTubeHEXFET®1998Obsolete1 (Unlimited)8EAR99NOT SPECIFIEDULTRA LOW RESISTANCEMOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G81SINGLE WITH BUILT-IN DIODE2.5W TcENHANCEMENT MODEN-ChannelSWITCHING30m Ω @ 7.3A, 10V1V @ 250μA550pF @ 25V7.3A Tc28nC @ 10V30V4.5V 10V±20VMS-012AA7.3A0.03Ohm58A30V70 mJNon-RoHS Compliant-----------------------------------
-
Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA---55°C~150°C TJTube-2016Obsolete1 (Unlimited)----MOSFET (Metal Oxide)---------N-Channel-3.6Ohm @ 1.2A, 10V4V @ 250μA170pF @ 25V2A Tc17nC @ 10V400V10V±20V------Non-RoHS CompliantThrough HoleI2PAK3.1W2A170pF3.6 Ω----------------------------
-
Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA-SILICON-55°C~150°C TJTube-2017Active1 (Unlimited)3---MOSFET (Metal Oxide)-----1-3.1W Ta 50W TcENHANCEMENT MODEN-ChannelSWITCHING1.8 Ω @ 2A, 10V4V @ 250μA410pF @ 25V3.3A Tc20nC @ 10V400V10V±20VTO-220AB---400V-ROHS3 CompliantThrough Hole--3.3A--12 Weeks36.000006gyes1SingleDRAIN10 ns14ns13 ns30 ns20V9.01mm10.41mm4.7mmNo------------
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Surface Mount8-SOIC (0.154, 3.90mm Width)-SILICON-55°C~150°C TJTape & Reel (TR)HEXFET®1997Active1 (Unlimited)8--LOGIC LEVEL COMPATIBLEMOSFET (Metal Oxide)DUALGULL WING---1-2.5W TcENHANCEMENT MODEP-ChannelSWITCHING60m Ω @ 5.3A, 10V2.5V @ 250μA860pF @ 10V5.3A Ta25nC @ 10V20V4.5V 10V±12V------ROHS3 CompliantSurface Mount---5.3A--12 Weeks8---Single-14 ns26ns68 ns100 ns12V1.4986mm4.9784mm3.9878mmNo60mOhm-20V-5.3A2.5W5.3A-2.5V-20V-20V100 ns-2.5 VNo SVHCContains Lead, Lead Free
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