Vishay Siliconix IRF710
- Part Number:
- IRF710
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2488231-IRF710
- Description:
- MOSFET N-CH 400V 2A TO-220AB
- Datasheet:
- IRF710
Vishay Siliconix IRF710 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF710.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- Weight6.000006g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2016
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC400V
- TechnologyMOSFET (Metal Oxide)
- Current Rating2A
- Number of Channels1
- Power Dissipation-Max36W Tc
- Element ConfigurationSingle
- Turn On Delay Time8 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs3.6Ohm @ 1.2A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds170pF @ 25V
- Current - Continuous Drain (Id) @ 25°C2A Tc
- Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
- Rise Time9.9ns
- Drain to Source Voltage (Vdss)400V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)11 ns
- Turn-Off Delay Time21 ns
- Continuous Drain Current (ID)2A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage400V
- Input Capacitance170pF
- Drain to Source Resistance3.6Ohm
- Rds On Max3.6 Ω
- Height9.01mm
- Length10.41mm
- Width4.7mm
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRF710 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 170pF @ 25V.This device conducts a continuous drain current (ID) of 2A, which is the maximum continuous current transistor can conduct.Using VGS=400V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 400V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 21 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 3.6Ohm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 400V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRF710 Features
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 3.6Ohm
a 400V drain to source voltage (Vdss)
IRF710 Applications
There are a lot of Vishay Siliconix
IRF710 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 170pF @ 25V.This device conducts a continuous drain current (ID) of 2A, which is the maximum continuous current transistor can conduct.Using VGS=400V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 400V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 21 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 3.6Ohm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 400V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRF710 Features
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 3.6Ohm
a 400V drain to source voltage (Vdss)
IRF710 Applications
There are a lot of Vishay Siliconix
IRF710 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
The three parts on the right have similar specifications to IRF710.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ChannelsPower Dissipation-MaxElement ConfigurationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningRoHS StatusLead FreeTransistor Element MaterialNumber of TerminationsSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Max Power DissipationFactory Lead TimeSeriesResistanceAdditional FeaturePower DissipationOutput CurrentThreshold VoltageDual Supply VoltageRecovery TimeNominal VgsREACH SVHCView Compare
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IRF710Through HoleThrough HoleTO-220-33TO-220AB6.000006g-55°C~150°C TJTube2016Obsolete1 (Unlimited)150°C-55°C400VMOSFET (Metal Oxide)2A136W TcSingle8 nsN-Channel3.6Ohm @ 1.2A, 10V4V @ 250μA170pF @ 25V2A Tc17nC @ 10V9.9ns400V10V±20V11 ns21 ns2A20V400V170pF3.6Ohm3.6 Ω9.01mm10.41mm4.7mmNoNon-RoHS CompliantContains Lead--------------------------------
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Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB----55°C~150°C TJTape & Reel (TR)2017Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--3.1W Ta 50W Tc--N-Channel1.8 Ω @ 2A, 10V4V @ 250μA410pF @ 25V3.3A Tc20nC @ 10V-400V10V±20V--3.3A---------Non-RoHS Compliant-SILICON2FET General Purpose PowerSINGLEGULL WING225unknownNOT SPECIFIED3R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING13A400V190 mJ------------
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Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA-I2PAK--55°C~150°C TJTube2016Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-----N-Channel3.6Ohm @ 1.2A, 10V4V @ 250μA170pF @ 25V2A Tc17nC @ 10V-400V10V±20V--2A--170pF-3.6 Ω----Non-RoHS Compliant--------------------3.1W-----------
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Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8---55°C~150°C TJTape & Reel (TR)1997Active1 (Unlimited)---20VMOSFET (Metal Oxide)-5.3A-2.5W TcSingle14 nsP-Channel60m Ω @ 5.3A, 10V2.5V @ 250μA860pF @ 10V5.3A Ta25nC @ 10V26ns20V4.5V 10V±12V68 ns100 ns-5.3A12V-20V---1.4986mm4.9784mm3.9878mmNoROHS3 CompliantContains Lead, Lead FreeSILICON8-DUALGULL WING------1-ENHANCEMENT MODE-SWITCHING----12 WeeksHEXFET®60mOhmLOGIC LEVEL COMPATIBLE2.5W5.3A-2.5V-20V100 ns-2.5 VNo SVHC
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