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IRF6216TRPBF

Infineon Technologies IRF6216TRPBF

Part Number:
IRF6216TRPBF
Manufacturer:
Infineon Technologies
Ventron No:
3070110-IRF6216TRPBF
Description:
MOSFET P-CH 150V 2.2A 8-SOIC
ECAD Model:
Datasheet:
IRF6216TRPBF

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Specifications
Infineon Technologies IRF6216TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF6216TRPBF.
  • Factory Lead Time
    14 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2005
  • JESD-609 Code
    e3
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    240mOhm
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    2.5W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Turn On Delay Time
    18 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    240m Ω @ 1.3A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1280pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    2.2A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    49nC @ 10V
  • Rise Time
    15ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    26 ns
  • Turn-Off Delay Time
    33 ns
  • Continuous Drain Current (ID)
    -2.2A
  • Threshold Voltage
    -5V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -150V
  • Dual Supply Voltage
    150V
  • Recovery Time
    120 ns
  • Max Junction Temperature (Tj)
    150°C
  • Nominal Vgs
    5 V
  • Height
    1.75mm
  • Length
    4.9784mm
  • Width
    3.9878mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRF6216TRPBF Description
Stripe Planar MOSFETs from IRF6216TRPBF use cutting-edge manufacturing techniques to provide extremely low on-resistance per silicon area. The current and voltage of an avalanche are fully characterized. This MOSFET has the following features:, Switching Losses, and Effective COSS for Design Simplification.

IRF6216TRPBF Features
To reduce the drain charge, set the gate to a low value.
Losses in Switching
Capacitance that has been fully characterized, including
Effective COSS for Design Simplification (See
Avalanche Voltage and Current are fully characterized.

IRF6216TRPBF Applications
Reset the Active Clamp Switch Reset
Converters from DC to DC
Lead-Free
IRF6216TRPBF More Descriptions
MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.24Ohm;ID -2.2A;SO-8;PD 2.5W;VGS /-20V
Single P-Channel 150 V 240 mOhm 33 nC HEXFET® Power Mosfet - SOIC-8
-150V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHSInfineon SCT
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-150V; Continuous Drain Current, Id:-2.2A; On Resistance, Rds(on):240mohm; Rds(on) Test Voltage, Vgs:-10V; Leaded Process Compatible:Yes RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to IRF6216TRPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Recovery Time
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Terminal Finish
    Additional Feature
    Subcategory
    JESD-30 Code
    Qualification Status
    Configuration
    Case Connection
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Supplier Device Package
    Input Capacitance
    Rds On Max
    View Compare
  • IRF6216TRPBF
    IRF6216TRPBF
    Infineon Technologies
    14 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    2005
    e3
    Not For New Designs
    1 (Unlimited)
    8
    SMD/SMT
    EAR99
    240mOhm
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    1
    1
    2.5W Ta
    Single
    ENHANCEMENT MODE
    2.5W
    18 ns
    P-Channel
    SWITCHING
    240m Ω @ 1.3A, 10V
    5V @ 250μA
    1280pF @ 25V
    2.2A Ta
    49nC @ 10V
    15ns
    10V
    ±20V
    26 ns
    33 ns
    -2.2A
    -5V
    20V
    -150V
    150V
    120 ns
    150°C
    5 V
    1.75mm
    4.9784mm
    3.9878mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF6215STRR
    IRF6215STRR
    Infineon Technologies
    -
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    1998
    e3
    Obsolete
    1 (Unlimited)
    2
    -
    EAR99
    -
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    260
    30
    1
    -
    3.8W Ta 110W Tc
    -
    ENHANCEMENT MODE
    -
    -
    P-Channel
    SWITCHING
    290m Ω @ 6.6A, 10V
    4V @ 250μA
    860pF @ 25V
    13A Tc
    66nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY
    Other Transistors
    R-PSSO-G2
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    DRAIN
    150V
    13A
    0.29Ohm
    44A
    150V
    310 mJ
    -
    -
    -
    IRF6216TRPBF vs IRF6215STRR
  • IRF640L
    IRF640L
    Vishay Siliconix
    -
    -
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    3
    -
    -55°C~150°C TJ
    Tube
    -
    2016
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    3.1W Ta 130W Tc
    -
    -
    -
    -
    N-Channel
    -
    180mOhm @ 11A, 10V
    4V @ 250μA
    1300pF @ 25V
    18A Tc
    70nC @ 10V
    -
    10V
    ±20V
    -
    -
    18A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    200V
    -
    -
    -
    -
    -
    I2PAK
    1.3nF
    180 mΩ
    IRF6216TRPBF vs IRF640L
  • IRF634STRR
    IRF634STRR
    Vishay Siliconix
    -
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    2016
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    3.1W Ta 74W Tc
    -
    -
    -
    -
    N-Channel
    -
    450mOhm @ 5.1A, 10V
    4V @ 250μA
    770pF @ 25V
    8.1A Tc
    41nC @ 10V
    -
    10V
    ±20V
    -
    -
    8.1A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    250V
    -
    -
    -
    -
    -
    D2PAK
    770pF
    450 mΩ
    IRF6216TRPBF vs IRF634STRR
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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