Infineon Technologies IRF6215S
- Part Number:
- IRF6215S
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2853607-IRF6215S
- Description:
- MOSFET P-CH 150V 13A D2PAK
- Datasheet:
- IRF6215S
Infineon Technologies IRF6215S technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF6215S.
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published1998
- JESD-609 Codee0
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY
- HTS Code8541.29.00.95
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)225
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max3.8W Ta 110W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs290m Ω @ 6.6A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds860pF @ 25V
- Current - Continuous Drain (Id) @ 25°C13A Tc
- Gate Charge (Qg) (Max) @ Vgs66nC @ 10V
- Drain to Source Voltage (Vdss)150V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)13A
- Drain-source On Resistance-Max0.29Ohm
- Pulsed Drain Current-Max (IDM)44A
- DS Breakdown Voltage-Min150V
- Avalanche Energy Rating (Eas)310 mJ
- RoHS StatusNon-RoHS Compliant
IRF6215S Description
The IRF6215SPBF is a HEXFET? fifth generation single P-channel Power MOSFET utilizing advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides an extremely efficient and reliable operation. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
IRF6215S Features Advanced process technology
Fast switching
Low static drain-to-source ON-resistance
Dynamic dV/dt rating
Fully avalanche rating
IRF6215S Applications
Automotive, Power Management
Induction furnaces
Arc furnaces and arc welders
Steel rolling mills
Large motors with periodic loading
Thyristor drives
Mechanical testing
Vibration analysis
ultrasonic inspection
The IRF6215SPBF is a HEXFET? fifth generation single P-channel Power MOSFET utilizing advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides an extremely efficient and reliable operation. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
IRF6215S Features Advanced process technology
Fast switching
Low static drain-to-source ON-resistance
Dynamic dV/dt rating
Fully avalanche rating
IRF6215S Applications
Automotive, Power Management
Induction furnaces
Arc furnaces and arc welders
Steel rolling mills
Large motors with periodic loading
Thyristor drives
Mechanical testing
Vibration analysis
ultrasonic inspection
IRF6215S More Descriptions
Trans MOSFET P-CH 150V 13A 3-Pin(2 Tab) D2PAK
-150V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-150V; Continuous Drain Current, Id:-13A; On-Resistance, Rds(on):290mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:D2-PAK; Drain Source On Resistance @ 10V:290mohm RoHS Compliant: No
-150V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-150V; Continuous Drain Current, Id:-13A; On-Resistance, Rds(on):290mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:D2-PAK; Drain Source On Resistance @ 10V:290mohm RoHS Compliant: No
The three parts on the right have similar specifications to IRF6215S.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusSubcategoryMountNumber of PinsSupplier Device PackageContinuous Drain Current (ID)Input CapacitanceRds On MaxVgs(th) (Max) @ Id:Technology:Supplier Device Package:Series:Rds On (Max) @ Id, Vgs:Power Dissipation (Max):Packaging:Package / Case:Operating Temperature:Mounting Type:Input Capacitance (Ciss) (Max) @ Vds:Gate Charge (Qg) (Max) @ Vgs:FET Type:FET Feature:Drain to Source Voltage (Vdss):Current - Continuous Drain (Id) @ 25°C:View Compare
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IRF6215SSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTubeHEXFET®1998e0Obsolete1 (Unlimited)2EAR99Tin/Lead (Sn/Pb)AVALANCHE RATED, HIGH RELIABILITY8541.29.00.95MOSFET (Metal Oxide)SINGLEGULL WING22530R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE3.8W Ta 110W TcENHANCEMENT MODEDRAINP-ChannelSWITCHING290m Ω @ 6.6A, 10V4V @ 250μA860pF @ 25V13A Tc66nC @ 10V150V10V±20V13A0.29Ohm44A150V310 mJNon-RoHS Compliant------------------------
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTape & Reel (TR)HEXFET®1998e3Obsolete1 (Unlimited)2EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITY-MOSFET (Metal Oxide)SINGLEGULL WING26030R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE3.8W Ta 110W TcENHANCEMENT MODEDRAINP-ChannelSWITCHING290m Ω @ 6.6A, 10V4V @ 250μA860pF @ 25V13A Tc66nC @ 10V150V10V±20V13A0.29Ohm44A150V310 mJNon-RoHS CompliantOther Transistors----------------------
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Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA---55°C~150°C TJTube-2016-Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)--------3.1W Ta 130W Tc--N-Channel-180mOhm @ 11A, 10V4V @ 250μA1300pF @ 25V18A Tc70nC @ 10V200V10V±20V-----Non-RoHS Compliant-Through Hole3I2PAK18A1.3nF180 mΩ----------------
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---------------------------------------------------4V @ 250µAMOSFET (Metal Oxide)TO-220AB-450 mOhm @ 5.1A, 10V74W (Tc)TubeTO-220-3-55°C ~ 150°C (TJ)Through Hole770pF @ 25V41nC @ 10VN-Channel-250V8.1A (Tc)
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