STMicroelectronics IRF620
- Part Number:
- IRF620
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2488500-IRF620
- Description:
- MOSFET N-CH 200V 6A TO-220
- Datasheet:
- IRF620(FP)
STMicroelectronics IRF620 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics IRF620.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- SeriesPowerMESH™ II
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureFAST SWITCHING
- SubcategoryFET General Purpose Power
- Voltage - Rated DC200V
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Current Rating6A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberIRF6
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max70W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation70W
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs800m Ω @ 3A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds350pF @ 25V
- Current - Continuous Drain (Id) @ 25°C6A Tc
- Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
- Rise Time30ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)6A
- Threshold Voltage4V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)6A
- Drain-source On Resistance-Max0.8Ohm
- Drain to Source Breakdown Voltage200V
- Pulsed Drain Current-Max (IDM)24A
- Feedback Cap-Max (Crss)80 pF
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF620 Description
The IRF620 is a 6A 200V enhancement mode power field effect transistor. IRF611, IRF612, and IRF613 are alternatives for IRF620 transistor.
IRF610 can be utilized in any application that requires high-speed switching, including power supply, motor drivers, and solenoid drivers, among others. Because the IRF610 transitor has low gate drive requirements, it may be directly generated from ICs, microcontrollers, and a variety of electronic platforms like as the Arduino and Raspberry Pi.
IRF620 Features
? Dynamic dv/dt rating
? Repetitive avalanche rated
? Fast switching
? Ease of paralleling
? Simple drive requirements
? Package Type: TO-220AB And TO-220
? Transistor Type: N Channel
? Max Voltage Applied From Drain to Source: 200V
? Max Gate to Source Voltage Should Be: ±20V
? Max Continues Drain Current is : 3A
? Max Pulsed Drain Current is: 8A
? Max Power Dissipation is: 43W
? Minimum Voltage Required to Conduct: 2V to 4V
? Max Storage & Operating temperature Should Be: -55 to 150 Centigrade
IRF620 Applications
High voltage applications
Relay driving applications
UPS
Telecommunication applications
DC to DC converters
The IRF620 is a 6A 200V enhancement mode power field effect transistor. IRF611, IRF612, and IRF613 are alternatives for IRF620 transistor.
IRF610 can be utilized in any application that requires high-speed switching, including power supply, motor drivers, and solenoid drivers, among others. Because the IRF610 transitor has low gate drive requirements, it may be directly generated from ICs, microcontrollers, and a variety of electronic platforms like as the Arduino and Raspberry Pi.
IRF620 Features
? Dynamic dv/dt rating
? Repetitive avalanche rated
? Fast switching
? Ease of paralleling
? Simple drive requirements
? Package Type: TO-220AB And TO-220
? Transistor Type: N Channel
? Max Voltage Applied From Drain to Source: 200V
? Max Gate to Source Voltage Should Be: ±20V
? Max Continues Drain Current is : 3A
? Max Pulsed Drain Current is: 8A
? Max Power Dissipation is: 43W
? Minimum Voltage Required to Conduct: 2V to 4V
? Max Storage & Operating temperature Should Be: -55 to 150 Centigrade
IRF620 Applications
High voltage applications
Relay driving applications
UPS
Telecommunication applications
DC to DC converters
IRF620 More Descriptions
Trans MOSFET N-CH 200V 6A 3-Pin(3 Tab) TO-220 Tube
Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Mosfet, N, To-220; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.8Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:75W; Rohs Compliant: Yes |Stmicroelectronics IRF620
Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Mosfet, N, To-220; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.8Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:75W; Rohs Compliant: Yes |Stmicroelectronics IRF620
The three parts on the right have similar specifications to IRF620.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Feedback Cap-Max (Crss)RoHS StatusLead FreeSupplier Device PackagePublishedDrain to Source Voltage (Vdss)Input CapacitanceRds On MaxWeightMax Operating TemperatureMin Operating TemperatureNumber of ChannelsTurn On Delay TimeFall Time (Typ)Turn-Off Delay TimeDrain to Source ResistanceHeightLengthWidthVgs(th) (Max) @ Id:Technology:Supplier Device Package:Series:Rds On (Max) @ Id, Vgs:Power Dissipation (Max):Packaging:Package / Case:Operating Temperature:Mounting Type:Input Capacitance (Ciss) (Max) @ Vds:Gate Charge (Qg) (Max) @ Vgs:FET Type:FET Feature:Drain to Source Voltage (Vdss):Current - Continuous Drain (Id) @ 25°C:View Compare
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IRF620Through HoleThrough HoleTO-220-33SILICON-65°C~150°C TJTubePowerMESH™ IIe3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)FAST SWITCHINGFET General Purpose Power200VMOSFET (Metal Oxide)NOT SPECIFIEDnot_compliant6ANOT SPECIFIEDIRF63Not Qualified170W TcSingleENHANCEMENT MODE70WN-ChannelSWITCHING800m Ω @ 3A, 10V4V @ 250μA350pF @ 25V6A Tc27nC @ 10V30ns10V±20V6A4VTO-220AB20V6A0.8Ohm200V24A80 pFROHS3 CompliantLead Free---------------------------------
-
Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~150°C TJTape & Reel (TR)--Obsolete1 (Unlimited)------MOSFET (Metal Oxide)--------3.1W Ta 74W Tc---N-Channel-450mOhm @ 5.1A, 10V4V @ 250μA770pF @ 25V8.1A Tc41nC @ 10V-10V±20V8.1A--------Non-RoHS Compliant-D2PAK2016250V770pF450 mΩ---------------------------
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Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3--55°C~175°C TJTube--Obsolete1 (Unlimited)------MOSFET (Metal Oxide)--------3.8W Ta 88W TcSingle--N-Channel-435mOhm @ 4.8A, 10V4V @ 250μA620pF @ 25V8A Tc34nC @ 10V16ns10V±20V8A--20V-----ROHS3 Compliant-D2PAK2009250V620pF435 mΩ1.437803g175°C-55°C18.4 ns15 ns28 ns435mOhm4.83mm10.67mm9.65mm----------------
-
-------------------------------------------------------------------4V @ 250µAMOSFET (Metal Oxide)TO-220AB-450 mOhm @ 5.1A, 10V74W (Tc)TubeTO-220-3-55°C ~ 150°C (TJ)Through Hole770pF @ 25V41nC @ 10VN-Channel-250V8.1A (Tc)
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