IRF620

STMicroelectronics IRF620

Part Number:
IRF620
Manufacturer:
STMicroelectronics
Ventron No:
2488500-IRF620
Description:
MOSFET N-CH 200V 6A TO-220
ECAD Model:
Datasheet:
IRF620(FP)

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Specifications
STMicroelectronics IRF620 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics IRF620.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tube
  • Series
    PowerMESH™ II
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    FAST SWITCHING
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    200V
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Current Rating
    6A
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    IRF6
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    70W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    70W
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    800m Ω @ 3A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    350pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    6A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    27nC @ 10V
  • Rise Time
    30ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    6A
  • Threshold Voltage
    4V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    6A
  • Drain-source On Resistance-Max
    0.8Ohm
  • Drain to Source Breakdown Voltage
    200V
  • Pulsed Drain Current-Max (IDM)
    24A
  • Feedback Cap-Max (Crss)
    80 pF
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRF620 Description

The IRF620 is a 6A 200V enhancement mode power field effect transistor. IRF611, IRF612, and IRF613 are alternatives for IRF620 transistor.
IRF610 can be utilized in any application that requires high-speed switching, including power supply, motor drivers, and solenoid drivers, among others. Because the IRF610 transitor has low gate drive requirements, it may be directly generated from ICs, microcontrollers, and a variety of electronic platforms like as the Arduino and Raspberry Pi.


IRF620 Features

? Dynamic dv/dt rating
? Repetitive avalanche rated
? Fast switching
? Ease of paralleling
? Simple drive requirements
? Package Type: TO-220AB And TO-220
? Transistor Type: N Channel
? Max Voltage Applied From Drain to Source: 200V
? Max Gate to Source Voltage Should Be: ±20V
? Max Continues Drain Current is : 3A
? Max Pulsed Drain Current is: 8A
? Max Power Dissipation is: 43W
? Minimum Voltage Required to Conduct: 2V to 4V
? Max Storage & Operating temperature Should Be: -55 to 150 Centigrade

IRF620 Applications

High voltage applications
Relay driving applications
UPS
Telecommunication applications
DC to DC converters
IRF620 More Descriptions
Trans MOSFET N-CH 200V 6A 3-Pin(3 Tab) TO-220 Tube
Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Mosfet, N, To-220; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.8Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:75W; Rohs Compliant: Yes |Stmicroelectronics IRF620
Product Comparison
The three parts on the right have similar specifications to IRF620.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Feedback Cap-Max (Crss)
    RoHS Status
    Lead Free
    Supplier Device Package
    Published
    Drain to Source Voltage (Vdss)
    Input Capacitance
    Rds On Max
    Weight
    Max Operating Temperature
    Min Operating Temperature
    Number of Channels
    Turn On Delay Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Drain to Source Resistance
    Height
    Length
    Width
    Vgs(th) (Max) @ Id:
    Technology:
    Supplier Device Package:
    Series:
    Rds On (Max) @ Id, Vgs:
    Power Dissipation (Max):
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Input Capacitance (Ciss) (Max) @ Vds:
    Gate Charge (Qg) (Max) @ Vgs:
    FET Type:
    FET Feature:
    Drain to Source Voltage (Vdss):
    Current - Continuous Drain (Id) @ 25°C:
    View Compare
  • IRF620
    IRF620
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -65°C~150°C TJ
    Tube
    PowerMESH™ II
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    FAST SWITCHING
    FET General Purpose Power
    200V
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    not_compliant
    6A
    NOT SPECIFIED
    IRF6
    3
    Not Qualified
    1
    70W Tc
    Single
    ENHANCEMENT MODE
    70W
    N-Channel
    SWITCHING
    800m Ω @ 3A, 10V
    4V @ 250μA
    350pF @ 25V
    6A Tc
    27nC @ 10V
    30ns
    10V
    ±20V
    6A
    4V
    TO-220AB
    20V
    6A
    0.8Ohm
    200V
    24A
    80 pF
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF634STRR
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    3.1W Ta 74W Tc
    -
    -
    -
    N-Channel
    -
    450mOhm @ 5.1A, 10V
    4V @ 250μA
    770pF @ 25V
    8.1A Tc
    41nC @ 10V
    -
    10V
    ±20V
    8.1A
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    D2PAK
    2016
    250V
    770pF
    450 mΩ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF634NSPBF
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -55°C~175°C TJ
    Tube
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    3.8W Ta 88W Tc
    Single
    -
    -
    N-Channel
    -
    435mOhm @ 4.8A, 10V
    4V @ 250μA
    620pF @ 25V
    8A Tc
    34nC @ 10V
    16ns
    10V
    ±20V
    8A
    -
    -
    20V
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    D2PAK
    2009
    250V
    620pF
    435 mΩ
    1.437803g
    175°C
    -55°C
    1
    8.4 ns
    15 ns
    28 ns
    435mOhm
    4.83mm
    10.67mm
    9.65mm
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF634
    -
    -
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    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    4V @ 250µA
    MOSFET (Metal Oxide)
    TO-220AB
    -
    450 mOhm @ 5.1A, 10V
    74W (Tc)
    Tube
    TO-220-3
    -55°C ~ 150°C (TJ)
    Through Hole
    770pF @ 25V
    41nC @ 10V
    N-Channel
    -
    250V
    8.1A (Tc)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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