Vishay Siliconix IRF540STRL
- Part Number:
- IRF540STRL
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3813732-IRF540STRL
- Description:
- MOSFET N-CH 100V 28A D2PAK
- Datasheet:
- IRF540S, SiHF540S
Vishay Siliconix IRF540STRL technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF540STRL.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Supplier Device PackageD2PAK (TO-263)
- Weight1.437803g
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- Published2009
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Current Rating28A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max3.7W Ta 150W Tc
- Element ConfigurationSingle
- Power Dissipation3.7W
- Turn On Delay Time8.8 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs77mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1700pF @ 25V
- Current - Continuous Drain (Id) @ 25°C28A Tc
- Gate Charge (Qg) (Max) @ Vgs72nC @ 10V
- Rise Time30ns
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)20 ns
- Turn-Off Delay Time19 ns
- Continuous Drain Current (ID)28A
- Gate to Source Voltage (Vgs)20V
- Input Capacitance1.7nF
- Drain to Source Resistance77mOhm
- Rds On Max77 mΩ
- Height4.83mm
- Length10.41mm
- Width9.65mm
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRF540STRL Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1700pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 28A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 19 ns.This device has a drain-to-source resistance of 77mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRF540STRL Features
a continuous drain current (ID) of 28A
the turn-off delay time is 19 ns
single MOSFETs transistor is 77mOhm
a 100V drain to source voltage (Vdss)
IRF540STRL Applications
There are a lot of Vishay Siliconix
IRF540STRL applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1700pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 28A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 19 ns.This device has a drain-to-source resistance of 77mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRF540STRL Features
a continuous drain current (ID) of 28A
the turn-off delay time is 19 ns
single MOSFETs transistor is 77mOhm
a 100V drain to source voltage (Vdss)
IRF540STRL Applications
There are a lot of Vishay Siliconix
IRF540STRL applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IRF540STRL More Descriptions
MOSFET N-CH 100V 28A D2PAK
MOSFET N-CHANNEL 100V
MOSFET N-CHANNEL 100V
The three parts on the right have similar specifications to IRF540STRL.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Input CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRoHS StatusLead FreeNumber of PinsSeriesDrain to Source Breakdown VoltageFET FeatureRadiation HardeningSurface MountTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)HTS CodeView Compare
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IRF540STRLSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABD2PAK (TO-263)1.437803g-55°C~175°C TJTape & Reel (TR)2009Obsolete1 (Unlimited)175°C-55°C100VMOSFET (Metal Oxide)28A113.7W Ta 150W TcSingle3.7W8.8 nsN-Channel77mOhm @ 17A, 10V4V @ 250μA1700pF @ 25V28A Tc72nC @ 10V30ns100V10V±20V20 ns19 ns28A20V1.7nF77mOhm77 mΩ4.83mm10.41mm9.65mmNon-RoHS CompliantContains Lead------------------------------
-
Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-SO--55°C~150°C TJTube2004Obsolete1 (Unlimited)150°C-55°C-40VMOSFET (Metal Oxide)-3.4A--2W Ta-2W43 nsP-Channel112mOhm @ 3.4A, 10V3V @ 250μA1110pF @ 25V3.4A Ta37nC @ 10V550ns40V4.5V 10V±20V50 ns88 ns-3.4A20V1.11nF190mOhm112 mΩ1.5mm5mm4mmRoHS CompliantLead Free8FETKY™-40VSchottky Diode (Isolated)No------------------------
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-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)1998Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-1-3.8W Ta 200W Tc---P-Channel60m Ω @ 24A, 10V4V @ 250μA2700pF @ 25V40A Tc180nC @ 10V-100V10V±20V----------Non-RoHS Compliant--HEXFET®---YESSILICONe32EAR99Matte Tin (Sn) - with Nickel (Ni) barrierHIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCEOther TransistorsSINGLEGULL WING26030R-PSSO-G2Not QualifiedSINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING38A0.06Ohm140A100V120 mJ-
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTube2002Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-1-3.8W Ta 70W Tc---N-Channel90m Ω @ 9A, 10V4V @ 250μA920pF @ 25V17A Tc37nC @ 10V-100V10V±20V----------Non-RoHS Compliant--HEXFET®---YESSILICONe02EAR99Tin/Lead (Sn/Pb)AVALANCHE RATED-SINGLEGULL WING22530R-PSSO-G2Not QualifiedSINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING17A0.09Ohm60A100V93 mJ8541.29.00.95
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