IRF540STRL

Vishay Siliconix IRF540STRL

Part Number:
IRF540STRL
Manufacturer:
Vishay Siliconix
Ventron No:
3813732-IRF540STRL
Description:
MOSFET N-CH 100V 28A D2PAK
ECAD Model:
Datasheet:
IRF540S, SiHF540S

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Specifications
Vishay Siliconix IRF540STRL technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF540STRL.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Supplier Device Package
    D2PAK (TO-263)
  • Weight
    1.437803g
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2009
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    100V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    28A
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    3.7W Ta 150W Tc
  • Element Configuration
    Single
  • Power Dissipation
    3.7W
  • Turn On Delay Time
    8.8 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    77mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1700pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    28A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    72nC @ 10V
  • Rise Time
    30ns
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    20 ns
  • Turn-Off Delay Time
    19 ns
  • Continuous Drain Current (ID)
    28A
  • Gate to Source Voltage (Vgs)
    20V
  • Input Capacitance
    1.7nF
  • Drain to Source Resistance
    77mOhm
  • Rds On Max
    77 mΩ
  • Height
    4.83mm
  • Length
    10.41mm
  • Width
    9.65mm
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
IRF540STRL Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1700pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 28A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 19 ns.This device has a drain-to-source resistance of 77mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IRF540STRL Features
a continuous drain current (ID) of 28A
the turn-off delay time is 19 ns
single MOSFETs transistor is 77mOhm
a 100V drain to source voltage (Vdss)


IRF540STRL Applications
There are a lot of Vishay Siliconix
IRF540STRL applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IRF540STRL More Descriptions
MOSFET N-CH 100V 28A D2PAK
MOSFET N-CHANNEL 100V
Product Comparison
The three parts on the right have similar specifications to IRF540STRL.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    RoHS Status
    Lead Free
    Number of Pins
    Series
    Drain to Source Breakdown Voltage
    FET Feature
    Radiation Hardening
    Surface Mount
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    HTS Code
    View Compare
  • IRF540STRL
    IRF540STRL
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    D2PAK (TO-263)
    1.437803g
    -55°C~175°C TJ
    Tape & Reel (TR)
    2009
    Obsolete
    1 (Unlimited)
    175°C
    -55°C
    100V
    MOSFET (Metal Oxide)
    28A
    1
    1
    3.7W Ta 150W Tc
    Single
    3.7W
    8.8 ns
    N-Channel
    77mOhm @ 17A, 10V
    4V @ 250μA
    1700pF @ 25V
    28A Tc
    72nC @ 10V
    30ns
    100V
    10V
    ±20V
    20 ns
    19 ns
    28A
    20V
    1.7nF
    77mOhm
    77 mΩ
    4.83mm
    10.41mm
    9.65mm
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF5803D2PBF
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8-SO
    -
    -55°C~150°C TJ
    Tube
    2004
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    -40V
    MOSFET (Metal Oxide)
    -3.4A
    -
    -
    2W Ta
    -
    2W
    43 ns
    P-Channel
    112mOhm @ 3.4A, 10V
    3V @ 250μA
    1110pF @ 25V
    3.4A Ta
    37nC @ 10V
    550ns
    40V
    4.5V 10V
    ±20V
    50 ns
    88 ns
    -3.4A
    20V
    1.11nF
    190mOhm
    112 mΩ
    1.5mm
    5mm
    4mm
    RoHS Compliant
    Lead Free
    8
    FETKY™
    -40V
    Schottky Diode (Isolated)
    No
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF5210STRR
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    1998
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    1
    -
    3.8W Ta 200W Tc
    -
    -
    -
    P-Channel
    60m Ω @ 24A, 10V
    4V @ 250μA
    2700pF @ 25V
    40A Tc
    180nC @ 10V
    -
    100V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    HEXFET®
    -
    -
    -
    YES
    SILICON
    e3
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
    Other Transistors
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    38A
    0.06Ohm
    140A
    100V
    120 mJ
    -
  • IRF530NS
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Tube
    2002
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    1
    -
    3.8W Ta 70W Tc
    -
    -
    -
    N-Channel
    90m Ω @ 9A, 10V
    4V @ 250μA
    920pF @ 25V
    17A Tc
    37nC @ 10V
    -
    100V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    HEXFET®
    -
    -
    -
    YES
    SILICON
    e0
    2
    EAR99
    Tin/Lead (Sn/Pb)
    AVALANCHE RATED
    -
    SINGLE
    GULL WING
    225
    30
    R-PSSO-G2
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    17A
    0.09Ohm
    60A
    100V
    93 mJ
    8541.29.00.95
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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