Infineon Technologies IPP600N25N3 G

Name: IPP600N25N3 G
Brand: Infineon Technologies
SKU: 2848830-IPP600N25N3 G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPP600N25N3 G

Manufacturer:: Infineon Technologies

Ventron No:: 2848830-IPP600N25N3 G

Description:: MOSFET N-CH 250V 25A TO220-3

ECAD Model:

Datasheet:: IPP600N25N3 G

Specifications

Infineon Technologies IPP600N25N3 G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP600N25N3 G.

Surface Mount
NO
Number of Terminals
3
Transistor Element Material
SILICON
JESD-609 Code
e3
Pbfree Code
icon-pbfree yes
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Terminal Form
THROUGH-HOLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Operating Temperature (Max)
175°C
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Operating Mode
ENHANCEMENT MODE
Transistor Application
SWITCHING
Polarity/Channel Type
N-CHANNEL
JEDEC-95 Code
TO-220AB
Drain Current-Max (Abs) (ID)
25A
Drain-source On Resistance-Max
0.06Ohm
Pulsed Drain Current-Max (IDM)
100A
DS Breakdown Voltage-Min
250V
Avalanche Energy Rating (Eas)
210 mJ
FET Technology
METAL-OXIDE SEMICONDUCTOR
RoHS Status
RoHS Compliant

Description

IPP600N25N3 G Description
The IPP600N25N3 G is an N-channel Power MOSFET producing based on OptiMOS? leading benchmark technology. The Infineon IPP600N25N3 G is perfectly suited for synchronous rectification in 48V systems, DC-to-DC converters, uninterruptable power supplies (UPS), and inverters.

IPP600N25N3 G Features
Lowest Qg and Qgd
The world's lowest FOM, MSL 1 rated
Highest efficiency
Highest Power density
Lowest board space consumption
Minimal device paralleling required
Environmentally friendly
Easy-to-design-in products
Ideal for high-frequency switching and synchronous rectification

IPP600N25N3 G Applications
Power Management
Motor Drive & Control
Industrial
Lighting
Audio

Product Comparison

The three parts on the right have similar specifications to IPP600N25N3 G.

Image

Part Number

Manufacturer

Surface Mount

Number of Terminals

Transistor Element Material

JESD-609 Code

Pbfree Code

ECCN Code

Terminal Finish

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Operating Temperature (Max)

Number of Elements

Configuration

Operating Mode

Transistor Application

Polarity/Channel Type

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

FET Technology

RoHS Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Voltage - Rated DC

Technology

Current Rating

Power Dissipation-Max

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Lead Free

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Fall Time (Typ)

Input Capacitance

Drain to Source Resistance

Rds On Max

View Compare
IPP600N25N3 G

Infineon Technologies

NO

3

SILICON

e3

icon-pbfree yes

EAR99

Tin (Sn)

SINGLE

THROUGH-HOLE

NOT SPECIFIED

compliant

NOT SPECIFIED

3

R-PSFM-T3

Not Qualified

175°C

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

SWITCHING

N-CHANNEL

TO-220AB

25A

0.06Ohm

100A

250V

210 mJ

METAL-OXIDE SEMICONDUCTOR

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPP60R125CPXKSA1

Infineon Technologies

-

-

SILICON

e3

yes

-

Tin (Sn)

SINGLE

-

NOT SPECIFIED

-

NOT SPECIFIED

3

-

Not Qualified

-

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

SWITCHING

-

TO-220AB

-

-

82A

-

708 mJ

-

ROHS3 Compliant

12 Weeks

Through Hole

Through Hole

TO-220-3

3

-55°C~150°C TJ

Tube

CoolMOS™

2007

Not For New Designs

1 (Unlimited)

3

600V

MOSFET (Metal Oxide)

25A

208W Tc

208W

15 ns

N-Channel

125m Ω @ 16A, 10V

3.5V @ 1.1mA

Halogen Free

2500pF @ 100V

25A Tc

70nC @ 10V

5ns

650V

10V

±20V

50 ns

25A

20V

600V

Lead Free

-

-

-

-

-

-

-

IPP600N25N3 G vs IPP60R125CPXKSA1
IPP65R125C7XKSA1

Infineon Technologies

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

18 Weeks

Through Hole

Through Hole

TO-220-3

3

-55°C~150°C TJ

Tube

CoolMOS™ C7

2008

Active

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

101W Tc

-

14 ns

N-Channel

125mOhm @ 8.9A, 10V

4V @ 440μA

Halogen Free

1670pF @ 400V

18A Tc

35nC @ 10V

15ns

650V

10V

±20V

71 ns

18A

20V

650V

Lead Free

PG-TO220-3

150°C

-55°C

8 ns

1.67nF

110mOhm

125 mΩ

IPP600N25N3 G vs IPP65R125C7XKSA1
IPP65R280C6XKSA1

Infineon Technologies

-

-

SILICON

-

yes

EAR99

-

SINGLE

-

NOT SPECIFIED

-

NOT SPECIFIED

3

R-PSFM-T3

Not Qualified

-

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

SWITCHING

-

TO-220AB

-

0.28Ohm

39A

-

290 mJ

-

RoHS Compliant

12 Weeks

Through Hole

Through Hole

TO-220-3

-

-55°C~150°C TJ

Tube

CoolMOS™

2008

Obsolete

1 (Unlimited)

3

-

MOSFET (Metal Oxide)

-

104W Tc

104W

13 ns

N-Channel

280m Ω @ 4.4A, 10V

3.5V @ 440μA

Halogen Free

950pF @ 100V

13.8A Tc

45nC @ 10V

11ns

-

10V

±20V

105 ns

13.8A

20V

650V

Lead Free

-

-

-

12 ns

-

-

-

IPP600N25N3 G vs IPP65R280C6XKSA1