Infineon Technologies IPP65R065C7XKSA1

Name: IPP65R065C7XKSA1
Brand: Infineon Technologies
SKU: 3813737-IPP65R065C7XKSA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPP65R065C7XKSA1

Manufacturer:: Infineon Technologies

Ventron No:: 3813737-IPP65R065C7XKSA1

Description:: MOSFET N-CH 650V TO-220-3

ECAD Model:

Datasheet:: IPP65R065C7XKSA1

Specifications

Infineon Technologies IPP65R065C7XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP65R065C7XKSA1.

Factory Lead Time
18 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
PG-TO220-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
CoolMOS™ C7
Published
2013
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
171W Tc
Turn On Delay Time
17 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
65mOhm @ 17.1A, 10V
Vgs(th) (Max) @ Id
4V @ 850μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
3020pF @ 400V
Current - Continuous Drain (Id) @ 25°C
33A Tc
Gate Charge (Qg) (Max) @ Vgs
64nC @ 10V
Rise Time
14ns
Drain to Source Voltage (Vdss)
650V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
7 ns
Turn-Off Delay Time
72 ns
Continuous Drain Current (ID)
33A
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
650V
Input Capacitance
3.02nF
Drain to Source Resistance
58mOhm
Rds On Max
65 mΩ
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IPP65R065C7XKSA1 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3020pF @ 400V.This device has a continuous drain current (ID) of [33A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 72 ns.MOSFETs have 58mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 17 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 650V.In order to operate this transistor, a voltage of 650V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IPP65R065C7XKSA1 Features
a continuous drain current (ID) of 33A
the turn-off delay time is 72 ns
single MOSFETs transistor is 58mOhm
a 650V drain to source voltage (Vdss)

IPP65R065C7XKSA1 Applications
There are a lot of Infineon Technologies
IPP65R065C7XKSA1 applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

IPP65R065C7XKSA1 More Descriptions

Transistor MOSFET N-Channel 650V 33A 3-Pin TO-220 Tube
Mosfet, N-Ch, 650V, 33A, To-220; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.058Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes |Infineon IPP65R065C7XKSA1
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO220-3, RoHSInfineon SCT
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power

Product Comparison

The three parts on the right have similar specifications to IPP65R065C7XKSA1.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Technology

Power Dissipation-Max

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

RoHS Status

Lead Free

Vgs(th) (Max) @ Id:

Vgs (Max):

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drive Voltage (Max Rds On, Min Rds On):

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

View Compare
IPP65R065C7XKSA1

Infineon Technologies

18 Weeks

Through Hole

Through Hole

TO-220-3

3

PG-TO220-3

-55°C~150°C TJ

Tube

CoolMOS™ C7

2013

Active

1 (Unlimited)

150°C

-55°C

MOSFET (Metal Oxide)

171W Tc

17 ns

N-Channel

65mOhm @ 17.1A, 10V

4V @ 850μA

Halogen Free

3020pF @ 400V

33A Tc

64nC @ 10V

14ns

650V

10V

±20V

7 ns

72 ns

33A

20V

650V

3.02nF

58mOhm

65 mΩ

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPP60R600P6XKSA1

Infineon Technologies

12 Weeks

Through Hole

Through Hole

TO-220-3

3

PG-TO220-3

-55°C~150°C TJ

Tube

CoolMOS™ P6

2013

Obsolete

1 (Unlimited)

150°C

-55°C

MOSFET (Metal Oxide)

63W Tc

11 ns

N-Channel

600mOhm @ 2.4A, 10V

4.5V @ 200μA

Halogen Free

557pF @ 100V

7.3A Tc

12nC @ 10V

7ns

600V

10V

±20V

14 ns

33 ns

7.3A

20V

600V

557pF

540mOhm

600 mΩ

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IPP65R065C7XKSA1 vs IPP60R600P6XKSA1
IPP65R125C7XKSA1

Infineon Technologies

18 Weeks

Through Hole

Through Hole

TO-220-3

3

PG-TO220-3

-55°C~150°C TJ

Tube

CoolMOS™ C7

2008

Active

1 (Unlimited)

150°C

-55°C

MOSFET (Metal Oxide)

101W Tc

14 ns

N-Channel

125mOhm @ 8.9A, 10V

4V @ 440μA

Halogen Free

1670pF @ 400V

18A Tc

35nC @ 10V

15ns

650V

10V

±20V

8 ns

71 ns

18A

20V

650V

1.67nF

110mOhm

125 mΩ

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IPP65R065C7XKSA1 vs IPP65R125C7XKSA1
IPP65R280E6

Infineon Technologies

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

3.5V @ 440µA

±20V

MOSFET (Metal Oxide)

PG-TO-220-3

CoolMOS™

280 mOhm @ 4.4A, 10V

104W (Tc)

Tube

TO-220-3

-55°C ~ 150°C (TJ)

Through Hole

950pF @ 100V

45nC @ 10V

N-Channel

-

10V

650V

13.8A (Tc)

IPP65R065C7XKSA1 vs IPP65R280E6

Certification

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IPP~~(54)~~

Part Number	Manufacturers	Description	Stock	Price
IPP65R065C7XKSA1 DISTI #32688962	Infineon Technologies AG	Trans MOSFET N-CH 650V 33A 3-Pin(3 Tab) TO-220 Tub	489	3 $3.8557
IPP65R065C7XKSA1 DISTI #IPP65R065C7XKSA1-ND	Infineon Technologies AG	MOSFET N-CH 650V TO-220-3 RoHS: Compliant	0	500 $5.0101
IPP65R065C7XKSA1 DISTI #V36:1790_06378598	Infineon Technologies AG	Trans MOSFET N-CH 650V 33A 3-Pin(3 Tab) TO-220 Tub	0	500 $5.01 5000 $4.882 50000 $4.13 250000 $3.735 500000 $3.731
IPP65R065C7XKSA1 DISTI #SP001080100	Infineon Technologies AG	Trans MOSFET N-CH 700V 33A 3-Pin TO-220 Tube (Alt: RoHS: Compliant	400	1 $4.59 10 $4.19 25 $4.09 50 $3.89 100 $3.69 500 $3.59 1000 $3.39
IPP65R065C7XKSA1 DISTI #IPP65R065C7XKSA1	Infineon Technologies AG	Trans MOSFET N-CH 700V 33A 3-Pin TO-220 Tube - Rai RoHS: Compliant	0	500 $4.39 1000 $4.19 2000 $4.09 3000 $3.89 5000 $3.89
IPP65R065C7 DISTI #726-IPP65R065C7	Infineon Technologies AG	MOSFET HIGH POWER_NEW RoHS: Compliant	0	1 $7.32 10 $6.61 25 $6.31 100 $5.48 250 $5.23 500 $4.77
IPP65R065C7XKSA1 DISTI #726-IPP65R065C7XKSA1	Infineon Technologies AG	MOSFET HIGH POWER_NEW RoHS: Compliant	0	1 $7.32 10 $6.61 25 $6.31 100 $5.48 250 $5.23 500 $4.77
IPP65R065C7XKSA1 DISTI #IPP65R065C7	Infineon Technologies AG	N-Ch 650V 33A 171W 0,065R TO220 RoHS: Compliant	0	1 $10.6 10 $6.6 50 $4.6 100 $4.22
IPP65R065C7XKSA1 DISTI #2839470	Infineon Technologies AG	MOSFET, N-CH, 650V, 33A, TO-220	0	1 $6.1 5 $5.58 10 $4.81 50 $4.5 100 $4.19
IPP65R065C7XKSA1 DISTI #2839470	Infineon Technologies AG	MOSFET, N-CH, 650V, 33A, TO-220 RoHS: Compliant	0	1 $8.48 5 $7.92 10 $7.01 50 $6.63 100 $6.28 250 $6.16

Infineon Technologies IPP65R065C7XKSA1

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