Infineon Technologies IPP114N03L G
- Part Number:
- IPP114N03L G
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3071734-IPP114N03L G
- Description:
- MOSFET N-CH 30V 30A TO-220-3
- ECAD Model:
-
- Datasheet:
- IP(B,P)114N03L G
Infineon Technologies IPP114N03L G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP114N03L G.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesOptiMOS™
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- Additional FeatureAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codecompliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max38W Tc
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs11.4m Ω @ 30A, 10V
- Vgs(th) (Max) @ Id2.2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1500pF @ 15V
- Current - Continuous Drain (Id) @ 25°C30A Tc
- Gate Charge (Qg) (Max) @ Vgs14nC @ 10V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- JEDEC-95 CodeTO-220AB
- Drain Current-Max (Abs) (ID)30A
- Drain-source On Resistance-Max0.0114Ohm
- Pulsed Drain Current-Max (IDM)210A
- DS Breakdown Voltage-Min30V
- Avalanche Energy Rating (Eas)30 mJ
- RoHS StatusRoHS Compliant
IPP114N03L G Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 30 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1500pF @ 15V.The drain current is the maximum continuous current this device can conduct, which is 30A.Pulsed drain current is maximum rated peak drain current 210A.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
IPP114N03L G Features
the avalanche energy rating (Eas) is 30 mJ
based on its rated peak drain current 210A.
a 30V drain to source voltage (Vdss)
IPP114N03L G Applications
There are a lot of Infineon Technologies
IPP114N03L G applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 30 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1500pF @ 15V.The drain current is the maximum continuous current this device can conduct, which is 30A.Pulsed drain current is maximum rated peak drain current 210A.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
IPP114N03L G Features
the avalanche energy rating (Eas) is 30 mJ
based on its rated peak drain current 210A.
a 30V drain to source voltage (Vdss)
IPP114N03L G Applications
There are a lot of Infineon Technologies
IPP114N03L G applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IPP114N03L G More Descriptions
Trans MOSFET N-CH 30V 30A 3-Pin(3 Tab) TO-220
Power Field-Effect Transistor, 30A I(D), 30V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
MOSFET, N CH, 30A, 30V, PG-TO220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0095ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 38W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 30A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Transistor Type: Power MOSFET; Voltage Vgs Max: 20V
Power Field-Effect Transistor, 30A I(D), 30V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
MOSFET, N CH, 30A, 30V, PG-TO220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0095ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 38W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 30A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Transistor Type: Power MOSFET; Voltage Vgs Max: 20V
The three parts on the right have similar specifications to IPP114N03L G.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusSupplier Device PackageView Compare
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IPP114N03L GThrough HoleTO-220-3NOSILICON-55°C~175°C TJTubeOptiMOS™2008e3yesObsolete1 (Unlimited)3EAR99MATTE TINAVALANCHE RATED, LOGIC LEVEL COMPATIBLEFET General Purpose PowerMOSFET (Metal Oxide)SINGLE260compliantNOT SPECIFIED3R-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODE38W TcENHANCEMENT MODEN-ChannelSWITCHING11.4m Ω @ 30A, 10V2.2V @ 250μA1500pF @ 15V30A Tc14nC @ 10V30V4.5V 10V±20VTO-220AB30A0.0114Ohm210A30V30 mJRoHS Compliant-- -
Through HoleTO-220-3NOSILICON-55°C~175°C TJTubeOptiMOS™2011e3yesObsolete1 (Unlimited)3EAR99MATTE TIN-FET General Purpose PowerMOSFET (Metal Oxide)SINGLE260compliantNOT SPECIFIED3R-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODE79W TcENHANCEMENT MODEN-ChannelSWITCHING13.9m Ω @ 45A, 10V3.5V @ 33μA1730pF @ 40V45A Tc25nC @ 10V80V6V 10V±20VTO-220AB45A0.0139Ohm180A80V50 mJRoHS Compliant-
-
Through HoleTO-220-3NOSILICON-55°C~175°C TJTubeOptiMOS™2008e3-Obsolete1 (Unlimited)3EAR99MATTE TINLOGIC LEVEL COMPATIBLEFET General Purpose PowerMOSFET (Metal Oxide)SINGLENOT SPECIFIEDcompliantNOT SPECIFIED3R-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODE58W TcENHANCEMENT MODEN-ChannelSWITCHING9.9m Ω @ 50A, 10V2V @ 20μA1639pF @ 15V50A Tc13nC @ 5V30V4.5V 10V±20VTO-220AB50A0.0099Ohm200A30V57 mJRoHS Compliant-
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Through HoleTO-220-3---55°C~175°C TJTubeOptiMOS™---Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)---------167W Tc-N-Channel-3.2mOhm @ 100A, 10V4V @ 120μA13.15pF @ 25V120A Tc160nC @ 10V60V10V±20V------ROHS3 CompliantPG-TO220-3-1
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